Magnetron enhanced reactive ion etching of In0.5Ga0.5P was investigated in BCl3 plasmas. Etch rates were determined as a function of cathode power (0.2–0.5 W/cm2), BCl3 flow rate (3–12 sccm), and pressure (2–10 mTorr), with rates as high as 0.35 μm/min achieved. The addition of N2, O2, and Ar to BCl3 was ineffective in producing an etch rate increase. Changes in sheet resistance and photoluminescence of n- and p-type InGaP exposed to BCl3 plasmas were also investigated as a function of power, pressure, and etch duration. The n-type material was more susceptible to etch-induced damage than p-type material, suggesting that electron traps are produced by ion bombardment. Scanning electron micrographs showed etched surfaces to be smooth, with vertical sidewalls free of undercut.
Dry etching of InGaP in magnetron enhanced BCl3 plasmas
G. F. McLane, M. C. Wood, D. W. Eckart, J. W. Lee, K. N. Lee, S. J. Pearton, C. R. Abernathy; Dry etching of InGaP in magnetron enhanced BCl3 plasmas. J. Vac. Sci. Technol. A 1 May 1997; 15 (3): 622–625. https://doi.org/10.1116/1.580694
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