Ultrathin (<100 Å) titanium oxide films have been synthesized on the Mo(100) surface and characterized using various surface science techniques. Epitaxial films of varying film thickness were prepared by evaporating titanium in an oxygen background between 500 and 700 K, followed by annealing to 900–1200 K. The growth, composition, and structure of the films have been investigated using ion scattering spectroscopy (ISS), x-ray photon spectroscopy (XPS), Auger electron spectroscopy (AES), low-energy electron diffraction (LEED), and scanning tunnel microscopy (STM). A (2√×√)R45° LEED pattern was observed after annealing 4.7, 15, and 90 Å film thicknesses to 900–1200 K in vacuum. LEED and STM results show that the films order along the 〈010〉 and 〈001〉 directions of the Mo(100) substrate. XPS data show that unannealed titanium oxide films exhibit only the valence state, whereas annealed titanium oxide films are partially reduced and exhibit the and states, as well. ISS measurements of unannealed titanium oxide films show that films wet the Mo(100) surface well.
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May 1997
The 43rd national symposium of the American Vacuum Society
14-18 Oct 1996
Philadelphia, Pennsylvania (USA)
Research Article|
May 01 1997
Preparation and characterization of epitaxial titanium oxide films on Mo(100) Available to Purchase
W. S. Oh;
W. S. Oh
Department of Chemistry, Texas A&M University, College Station, Texas 77843-3255
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C. Xu;
C. Xu
Department of Chemistry, Texas A&M University, College Station, Texas 77843-3255
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D. W. Goodman
D. W. Goodman
Department of Chemistry, Texas A&M University, College Station, Texas 77843-3255
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W. S. Oh
C. Xu
D. Y. Kim
D. W. Goodman
Department of Chemistry, Texas A&M University, College Station, Texas 77843-3255
J. Vac. Sci. Technol. A 15, 1710–1716 (1997)
Article history
Received:
September 30 1996
Accepted:
February 03 1997
Citation
W. S. Oh, C. Xu, D. Y. Kim, D. W. Goodman; Preparation and characterization of epitaxial titanium oxide films on Mo(100). J. Vac. Sci. Technol. A 1 May 1997; 15 (3): 1710–1716. https://doi.org/10.1116/1.580925
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