In a TiN etching process using electron cyclotron resonance (ECR) plasma of and gas mixture, the decline of TiN etch rate was observed after the erosion of the photoresist surface with the ECR plasma, but we could prevent the decline by the addition of to the etching gas mixture. Carbon was detected by x-ray photoelectron spectroscopy (XPS) on the TiN surface (on which there was no photoresist) etched in the reactor with the ECR plasma after the erosion of the photoresist. The TiN surface was contaminated by carbon in the reactor during the etching process. gas was added to reduce carbon contamination. In fact, after the photoresist was eroded with the added ECR plasma, carbon was hardly detected by the XPS on the sample surface etched in the reactor and the TiN etch rate did not decline. Therefore, we concluded that carbon contamination on the TiN surface originated from the erosion of the photoresist with the ECR plasma causing the decline of the TiN etch rate. The effect of addition must be attributed to the reaction between nitrogen radical in the added ECR plasma and carbon in the reactor.
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May 1997
The 43rd national symposium of the American Vacuum Society
14-18 Oct 1996
Philadelphia, Pennsylvania (USA)
Research Article|
May 01 1997
Carbon contamination in an etching reactor using electron cyclotron resonance plasma and the effect of a addition
Kazuhiro Miwa;
Kazuhiro Miwa
VLSI Laboratory, Fujitsu VLSI Ltd., 1500 Mizono Tado-cho, Kuwana-gun, Mie 511-01, Japan
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Masaaki Aoyama;
Masaaki Aoyama
VLSI Laboratory, Fujitsu VLSI Ltd., 1500 Mizono Tado-cho, Kuwana-gun, Mie 511-01, Japan
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Kenichi Higuchi;
Kenichi Higuchi
VLSI Laboratory, Fujitsu VLSI Ltd., 1500 Mizono Tado-cho, Kuwana-gun, Mie 511-01, Japan
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Minoru Inoue;
Minoru Inoue
VLSI Laboratory, Fujitsu VLSI Ltd., 1500 Mizono Tado-cho, Kuwana-gun, Mie 511-01, Japan
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Hidehiro Kojiri;
Hidehiro Kojiri
Process Development Division, Fujitsu Ltd., 1500 Mizono Tado-cho, Kuwana-gun, Mie 511-01, Japan
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Kunihiko Nagase
Kunihiko Nagase
Process Development Division, Fujitsu Ltd., 1500 Mizono Tado-cho, Kuwana-gun, Mie 511-01, Japan
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J. Vac. Sci. Technol. A 15, 1413–1417 (1997)
Article history
Received:
October 08 1996
Accepted:
January 20 1997
Citation
Kazuhiro Miwa, Masaaki Aoyama, Kenichi Higuchi, Minoru Inoue, Hidehiro Kojiri, Kunihiko Nagase; Carbon contamination in an etching reactor using electron cyclotron resonance plasma and the effect of a addition. J. Vac. Sci. Technol. A 1 May 1997; 15 (3): 1413–1417. https://doi.org/10.1116/1.580552
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