Epitaxial thin films of pure-phase Fe3O4(110), Fe3O4(111), α-Fe2O3(112̄0), and α-Fe2O3(11̄02) have been grown on MgO(110), α-Al2O3(0001), α-Al2O3(112̄0), and α-Al2O3(11̄02) substrates, respectively, by molecular beam epitaxy using an elemental Fe source and an electron cyclotron resonance oxygen plasma source. Characterization of the crystal structures, chemical states, and epitaxial relationships was carried out using a variety of techniques, including in situ reflection high-energy electron diffraction (RHEED), low-energy electron diffraction, x-ray photoelectron spectroscopy/diffraction, and ex situ x-ray reflectivity and diffraction. Real-time RHEED reveals that Fe3O4 growth on MgO appears in a step-flow fashion, whereas the growth of Fe3O4(111) on α-Al2O3(0001) occurs initially by island formation, and then island coalescence. However, the growth of α-Fe2O3 on α-Al2O3 appears to follow an intermediate growth mode. The formation of pure-phase films is controlled largely by oxygen partial pressure, plasma power, and growth rate, but appears to be independent of growth temperature, at least from 250 to 550 °C. The present study demonstrates that selective growth of pure-phase iron oxides with various low-index orientations can be achieved by controlling the growth conditions and selecting suitable substrates.

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