We report the effect of partial pressure on the structure of MgO thin films deposited on Si(100) substrates by radio frequency-magnetron sputtering in mixture. The films were evaluated using x-ray diffractmeter. As increasing partial pressure, the intensity of reflection increased and saturated above partial pressure of Pa, which corresponds to flow rate of 3 sccm. Effect of gas on the structure of MgO thin films were investigated by plasma emission spectroscopy. The increase of the optical emission intensity of NH spectrum results in the increase of intensity of reflection. We found the strong relationship between the emission intensity of NH spectrum and intensity of reflection.
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© 1997 American Vacuum Society.
1997
American Vacuum Society
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