Scanning tunneling microscopy is used to study the compensation of Zn‐dopant atoms by surface vacancies on InP and GaAs(110) surfaces as a function of the annealing time and temperature. An attractive interaction is observed between negatively charged Zn atoms and positively charged anion vacancies. Uncharged Zn‐vacancy defect complexes are formed and their structure is analyzed. The concentration of the complexes increases with the vacancy concentration. Simultaneously the concentration of charged Zn decreases. The total observable Zn concentration is found to be the sum of the concentration of isolated charged Zn atoms and of the concentration of the defect complexes. This sum is constant at low temperatures, but decreases at 480 K. The observations are explained by the formation of subsurface defect complexes at higher temperatures and surface complexes at low temperatures.
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May 1996
The 42nd national symposium of the American Vacuum Society
16−20 Oct 1995
Mineapolis, Minnesota (USA)
Research Article|
May 01 1996
Temperature dependent compensation of Zn‐dopant atoms by vacancies in III–V semiconductor surfaces
Ph. Ebert;
Ph. Ebert
Institut für Festkörperforschung, Forschungszentrum Jülich GmbH, D‐52425 Jülich, Germany
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M. Heinrich;
M. Heinrich
Institut für Festkörperforschung, Forschungszentrum Jülich GmbH, D‐52425 Jülich, Germany
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K. Urban;
K. Urban
Institut für Festkörperforschung, Forschungszentrum Jülich GmbH, D‐52425 Jülich, Germany
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K.‐J. Chao;
K.‐J. Chao
Department of Physics, University of Texas, Austin, Texas 78712
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A. R. Smith;
A. R. Smith
Department of Physics, University of Texas, Austin, Texas 78712
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C. K. Shih
C. K. Shih
Department of Physics, University of Texas, Austin, Texas 78712
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J. Vac. Sci. Technol. A 14, 1807–1811 (1996)
Article history
Received:
December 18 1995
Accepted:
March 11 1996
Citation
Ph. Ebert, M. Heinrich, K. Urban, K.‐J. Chao, A. R. Smith, C. K. Shih; Temperature dependent compensation of Zn‐dopant atoms by vacancies in III–V semiconductor surfaces. J. Vac. Sci. Technol. A 1 May 1996; 14 (3): 1807–1811. https://doi.org/10.1116/1.580340
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