Determination of the lateral spread of Xe ions in silicon nitride and hydrated silicon nitride films by oblique incidence Rutherford backscattering Available to Purchase

Both 100 and 200 keV Xe ions were implanted into silicon nitride (Si₃N₄) films and 600, 800, and 1000 keV Xe ions were implanted into hydrated silicon nitride (Si₁N_1.375H_0.603) films at different angles. In order to determine the lateral spread of Xe ions implanted in Si₃N₄ and Si₁N_1.375H_0.635 at room temperature, both normal and oblique incidence Rutherford backscattering were used. The results show that marked improvements in the measurement sensitivity to lateral spread is obtained by oblique incidence Rutherford backscattering. The lateral spread obtained agrees with the TRIM’92 prediction within experimental error for the 100–200 keV Xe⁺ implanted into the Si₃N₄ films, but a significant deviation of the lateral spread from the calculated value is observed for 600, 800, and 1000 keV Xe⁺ implanted into Si₁N_1.375H_0.603 film.