Characterization of molecular beam epitaxy grown CdF₂ layers by x‐ray diffraction and CaF₂:Sm photoluminescence probe Available to Purchase

For studies of crystal quality and strain relaxation in heterostructures with epitaxial CdF₂ and CaF₂ layers on Si(111), differential double crystal x‐ray diffractometry and impurity photoluminescence techniques were used. The crystalline quality of molecular beam epitaxy grown CdF₂ layers can be high and comparable with that of III–V compound pseudomorphic heterostructures. The best results were obtained for CdF₂ layers grown on CaF₂ buffer layers which were coherent with the Si substrate.