The role of surface hydrides and fluorides in the Si chemical vapor deposition (CVD) process was studied by in situ Fourier transform infrared spectroscopy using a porous silicon film as the substrate. Hydrides protect the silicon surface from oxidation until they are desorbed at 350–400 °C. However, the hydrides are replaced almost completely by surface fluorides when SiH2F2 is used as a reactant in the CVD process at temperatures above 400 °C. The surface is then etched due to a reaction between the fluorides and the surface silicon. When the process temperature is lowered to 250 °C, the surface is covered by both hydrides and fluorides, and a silicon film is deposited.
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© 1995 American Vacuum Society.
1995
American Vacuum Society
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