Scanning electron microscopy, atomic force microscopy, and Raman spectroscopy were used to characterize the microstructure of photoluminescent porous silicon (PS) layers formed by the anodic etching (HF:H2O:ethanol), at various current densities, of p‐type (100) silicon wafers possessing resistivity in the range 1–2 Ω cm. Existing models for the origin of luminescence in PS are not supported by our observations. Cross‐sectional as well as surface atomic force micrographs show the material to be clumpy rather than columnar; rodlike structures are not observed down to a scale of 40 nm. A three‐dimensional model of the mesostructure of porous silicon is discussed. Room‐temperature Raman scattering measurements show no evidence for a‐Si:H or polysilanes and the material reported here is composed of 10 nm roughly spherical Si nanocrytallites rather than 3 nm wires postulated in standard quantum confinement models.
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July 1994
The 40th National Symposium of the American Vacuum Society
15−19 Nov 1993
Orlando, Florida (USA)
Research Article|
July 01 1994
Mesostructure of photoluminescent porous silicon
F. Ruiz;
F. Ruiz
Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Unidad Saltillo, Apdo. Postal 663, 25000 Saltillo, Coahuila, México
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C. Vázquez‐López;
C. Vázquez‐López
Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Unidad Saltillo, Apdo. Postal 663, 25000 Saltillo, Coahuila, México
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J. González‐Hernández;
J. González‐Hernández
Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Unidad Saltillo, Apdo. Postal 663, 25000 Saltillo, Coahuila, México
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David D. Allred;
David D. Allred
Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Unidad Saltillo, Apdo. Postal 663, 25000 Saltillo, Coahuila, México
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G. Romero‐Paredes;
G. Romero‐Paredes
Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Departamento de Ingenieria Eléctrica, Apdo. Postal 14‐740, 07000, México, México
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R. Peña‐Sierra;
R. Peña‐Sierra
Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Departamento de Ingenieria Eléctrica, Apdo. Postal 14‐740, 07000, México, México
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G. Torres‐Delgado
G. Torres‐Delgado
Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Departamento de Física, Apdo. Postal 14‐740, México, México
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F. Ruiz
C. Vázquez‐López
J. González‐Hernández
David D. Allred
G. Romero‐Paredes
R. Peña‐Sierra
G. Torres‐Delgado
Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Unidad Saltillo, Apdo. Postal 663, 25000 Saltillo, Coahuila, México
J. Vac. Sci. Technol. A 12, 2565–2571 (1994)
Article history
Received:
November 15 1993
Accepted:
March 07 1994
Citation
F. Ruiz, C. Vázquez‐López, J. González‐Hernández, David D. Allred, G. Romero‐Paredes, R. Peña‐Sierra, G. Torres‐Delgado; Mesostructure of photoluminescent porous silicon. J. Vac. Sci. Technol. A 1 July 1994; 12 (4): 2565–2571. https://doi.org/10.1116/1.579058
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