This paper examines the damage created by an electron beam on layered specimens consisting of a (CH2)17 self‐assembled monolayer (SAM) deposited on an oxidized Si wafer. Beam effects on both the SAM and substrate were observed. X‐ray photoelectron spectroscopy (XPS) measurements indicate that less than 20% of the carbon from the film is lost during the beam damage, ion analysis shows hydrogen emission from the films, and residual gas analysis suggest loss of some CHx (x=2–4) molecules. Consistent with the conversion of some (CH)n chains to ‘‘graphite,’’ the C 1s photopeak is broadened by the electron beam. In addition to the effects on the SAM layer, there are shifts for the O 1s and oxidized‐Si2p binding energies due to the electron beam exposure. Studies on SiO2 films formed in a wide variety of ways, without the SAM, show similar effects. These shifts are attributed to changes in potential at the Si–SiO2 interface.
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July 1994
The 40th National Symposium of the American Vacuum Society
15−19 Nov 1993
Orland, Florida (USA)
Research Article|
July 01 1994
Electron beam effects on (CH2)17 self‐assembled monolayer SiO2/Si specimens
D. R. Baer;
D. R. Baer
Pacific Northwest Laboratory, Richland, Washington 99352
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M. H. Engelhard;
M. H. Engelhard
Pacific Northwest Laboratory, Richland, Washington 99352
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D. W. Schulte;
D. W. Schulte
Pacific Northwest Laboratory, Richland, Washington 99352
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D. E. Guenther;
D. E. Guenther
Pacific Northwest Laboratory, Richland, Washington 99352
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Li‐Qiong Wang;
Li‐Qiong Wang
Pacific Northwest Laboratory, Richland, Washington 99352
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P. C. Rieke
P. C. Rieke
Pacific Northwest Laboratory, Richland, Washington 99352
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J. Vac. Sci. Technol. A 12, 2478–2485 (1994)
Article history
Received:
January 24 1994
Accepted:
April 11 1994
Citation
D. R. Baer, M. H. Engelhard, D. W. Schulte, D. E. Guenther, Li‐Qiong Wang, P. C. Rieke; Electron beam effects on (CH2)17 self‐assembled monolayer SiO2/Si specimens. J. Vac. Sci. Technol. A 1 July 1994; 12 (4): 2478–2485. https://doi.org/10.1116/1.579197
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