We have used Raman spectroscopy, large‐ and small‐angle x‐ray diffraction spectroscopy of sputter‐deposited, vacuum‐annealed, soft x‐ray Mo/Si thin‐film multilayers to study the physics of silicide formation. Two sets of multilayer samples with d‐spacing 8.4 and 2.0 nm have been studied. Annealing at temperatures above 800 °C causes a gradual formation of amorphous MoSi2 interfaces between the Si and Mo layers. The transition from amorphous to crystalline MoSi2 is abrupt. The experimental results indicate that nucleation is the dominant process for the early stage and crystallization is the dominant process after nucleation is well advanced. In the thicker multilayer, a portion of the silicon crystallizes during annealing and a strong Raman signal is observed. An advantage of Raman spectroscopy is that the Raman signal of the silicide is observed even before the presence of MoSi2 can be seen using x‐ray diffraction. This study indicates that Raman spectroscopy is an effective technique for characterizing the formation of crystalline silicides.
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July 1994
The 40th National Symposium of the American Vacuum Society
15−19 Nov 1993
Orlando, Florida (USA)
Research Article|
July 01 1994
Raman spectroscopic study of the formation of t‐MoSi2 from Mo/Si multilayers Available to Purchase
M. Cai;
M. Cai
Department of Physics and Astronomy, Brigham Young University, Provo, Utah 84602
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D. D. Allred;
D. D. Allred
Department of Physics and Astronomy, Brigham Young University, Provo, Utah 84602
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A. Reyes‐Mena
A. Reyes‐Mena
MOXTEK, Inc., Orem, Utah 84057
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M. Cai
D. D. Allred
A. Reyes‐Mena
Department of Physics and Astronomy, Brigham Young University, Provo, Utah 84602
J. Vac. Sci. Technol. A 12, 1535–1541 (1994)
Article history
Received:
October 04 1993
Accepted:
April 11 1994
Citation
M. Cai, D. D. Allred, A. Reyes‐Mena; Raman spectroscopic study of the formation of t‐MoSi2 from Mo/Si multilayers. J. Vac. Sci. Technol. A 1 July 1994; 12 (4): 1535–1541. https://doi.org/10.1116/1.579351
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