Scanning microprobe reflection high‐energy electron diffraction is a powerful technique to investigate the growth mechanism through microscopic surface observations during molecular‐beam epitaxy (MBE) or metalorganic MBE. The Ga droplet formation and annihilation were observed in real time during GaAs growth with an alternative source supply. Droplets with a round shape whose diameter was the order of a micrometer were formed when only Ga was supplied over an amount of monolayer of GaAs on the surface. They were annihilated when As was supplied to grow a GaAs layer. At high substrate temperatures, the droplets on the vicinal GaAs surface moved upward to atomic steps before its annihilation. Anomalous features of droplet formation were observed during AlAs growth with an alternative source supply on the GaAs substrate. This is interpreted by the intermixing between Al and Ga atoms on the surface during growth. Indium droplets were also observed during InAs MBE growth at high temperatures, which were revealed to be the origin of the InAs hillocks.
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July 1994
The 40th National Symposium of the American Vacuum Society
15−19 Nov 1993
Orlando, Florida (USA)
Research Article|
July 01 1994
Real‐time scanning microprobe reflection high‐energy electron diffraction observations of III–V growth during molecular‐beam epitaxy
T. Isu;
T. Isu
Semiconductor Research Laboratory, Mitsubishi Electric Corporation, 8‐1‐1 Tsukaguchi‐honmachi Amagasaki, Hyogo 661, Japan
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Y. Morishita;
Y. Morishita
Optoelectronics Technology Research Laboratory, 5‐1 Tohkodai Tsukuba, Ibaraki 300‐26, Japan
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S. Goto;
S. Goto
Optoelectronics Technology Research Laboratory, 5‐1 Tohkodai Tsukuba, Ibaraki 300‐26, Japan
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Y. Nomura;
Y. Nomura
Optoelectronics Technology Research Laboratory, 5‐1 Tohkodai Tsukuba, Ibaraki 300‐26, Japan
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Y. Katayama
Y. Katayama
Optoelectronics Technology Research Laboratory, 5‐1 Tohkodai Tsukuba, Ibaraki 300‐26, Japan
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J. Vac. Sci. Technol. A 12, 1176–1179 (1994)
Article history
Received:
October 04 1993
Accepted:
February 07 1994
Citation
T. Isu, Y. Morishita, S. Goto, Y. Nomura, Y. Katayama; Real‐time scanning microprobe reflection high‐energy electron diffraction observations of III–V growth during molecular‐beam epitaxy. J. Vac. Sci. Technol. A 1 July 1994; 12 (4): 1176–1179. https://doi.org/10.1116/1.579291
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