We studied the adhesion of a silicon dioxide film, formed from silane and nitrous oxide gas by plasma‐enhanced chemical vapor deposition, to a polycarbonate substrate and the bonding between the film and the substrate by x‐ray photoelectron spectroscopy. Adhesion of the SiO2 film to the polycarbonate increases with increasing SiH4 flow rate. All SiO2 film squares produced at a SiH4 flow rate of 10 standard cm3 min−1 exhibited good adhesion to the substrate. An analysis of the x‐ray photoelectron spectra indicates that more phenyl groups are decomposed as adhesion increases. The bonding between the SiO2 film and the polycarbonate substrate is discussed on the basis of x‐ray photoelectron spectroscopy. The Si–O–C bonding between SiO2 and polycarbonate results in good adhesion between the film and the substrate.
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Research Article|
May 01 1994
Adhesion between polycarbonate substrate and SiO2 film formed from silane and nitrous oxide by plasma‐enhanced chemical vapor deposition Available to Purchase
Makoto Shinoda;
Makoto Shinoda
Nissan Research Center, Nissan Motor Co., Ltd., 1, Natsushima, Yokosuka, Kanagawa 237, Japan
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Toshikazu Nishide;
Toshikazu Nishide
Nissan Research Center, Nissan Motor Co., Ltd., 1, Natsushima, Yokosuka, Kanagawa 237, Japan
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Yushi Shichi
Yushi Shichi
Nissan ARC, Ltd., 1, Natsushima, Yokosuka, Kanagawa 237, Japan
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Makoto Shinoda
Toshikazu Nishide
Yushi Shichi
Nissan Research Center, Nissan Motor Co., Ltd., 1, Natsushima, Yokosuka, Kanagawa 237, Japan
J. Vac. Sci. Technol. A 12, 746–750 (1994)
Article history
Received:
January 04 1993
Accepted:
January 22 1994
Citation
Makoto Shinoda, Toshikazu Nishide, Yushi Shichi; Adhesion between polycarbonate substrate and SiO2 film formed from silane and nitrous oxide by plasma‐enhanced chemical vapor deposition. J. Vac. Sci. Technol. A 1 May 1994; 12 (3): 746–750. https://doi.org/10.1116/1.578817
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