We studied the adhesion of a silicon dioxide film, formed from silane and nitrous oxide gas by plasma‐enhanced chemical vapor deposition, to a polycarbonate substrate and the bonding between the film and the substrate by x‐ray photoelectron spectroscopy. Adhesion of the SiO2 film to the polycarbonate increases with increasing SiH4 flow rate. All SiO2 film squares produced at a SiH4 flow rate of 10 standard cm3 min−1 exhibited good adhesion to the substrate. An analysis of the x‐ray photoelectron spectra indicates that more phenyl groups are decomposed as adhesion increases. The bonding between the SiO2 film and the polycarbonate substrate is discussed on the basis of x‐ray photoelectron spectroscopy. The Si–O–C bonding between SiO2 and polycarbonate results in good adhesion between the film and the substrate.

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