The undesired deposition of W on SiO2 during W chemical vapor deposition on Si with the WF6/SiH4 process has been studied by in situ time resolved mass spectrometry. This study shows that for [SiH4]/[WF6]<0.3 loss of selectivity occurs due to an autocatalytic reaction on the SiO2 surface. Based on the observations, a model for the process has been proposed. In this model, the rate limiting step is the formation of Si2H2n from two SiH4 molecules. This reaction requires a nucleation site, probably an impurity in the SiO2 or adjacent metallic areas, and is retarded by WF6. Subsequently, the Si2H2n reacts with WF6 to a W‐containing species that will then also act as a nucleation site. When the density of W‐containing species approaches monolayer coverage, these species react together with Si2H2n, thus forming areas of metallic W.
Skip Nav Destination
,
,
,
Article navigation
Research Article|
May 01 1994
Loss of selectivity during W chemical vapor deposition on Si using the WF6/SiH4 process Available to Purchase
P. A. C. Groenen;
P. A. C. Groenen
Eindhoven University of Technology, Faculty of Physics, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
Search for other works by this author on:
Ö. F. Tekcan;
Ö. F. Tekcan
Eindhoven University of Technology, Faculty of Physics, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
Search for other works by this author on:
J. G. A. Hölscher;
J. G. A. Hölscher
Eindhoven University of Technology, Faculty of Physics, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
Search for other works by this author on:
H. H. Brongersma
H. H. Brongersma
Eindhoven University of Technology, Faculty of Physics, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
Search for other works by this author on:
P. A. C. Groenen
Ö. F. Tekcan
J. G. A. Hölscher
H. H. Brongersma
Eindhoven University of Technology, Faculty of Physics, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
J. Vac. Sci. Technol. A 12, 737–745 (1994)
Article history
Received:
October 04 1993
Accepted:
January 29 1994
Citation
P. A. C. Groenen, Ö. F. Tekcan, J. G. A. Hölscher, H. H. Brongersma; Loss of selectivity during W chemical vapor deposition on Si using the WF6/SiH4 process. J. Vac. Sci. Technol. A 1 May 1994; 12 (3): 737–745. https://doi.org/10.1116/1.578816
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Perspective on improving the quality of surface and material data analysis in the scientific literature with a focus on x-ray photoelectron spectroscopy (XPS)
George H. Major, Joshua W. Pinder, et al.
Low-resistivity molybdenum obtained by atomic layer deposition
Kees van der Zouw, Bernhard Y. van der Wel, et al.
Machine-learning-enabled on-the-fly analysis of RHEED patterns during thin film deposition by molecular beam epitaxy
Tiffany C. Kaspar, Sarah Akers, et al.
Related Content
Formation and IR spectrum of monobridged Si2H4 isolated in solid argon
J. Chem. Phys. (May 2020)
Gas‐phase transport of WF6 through annular nanopipes in TiN during chemical vapor deposition of W on TiN/Ti/SiO2 structures for integrated circuit fabrication
Appl. Phys. Lett. (November 1996)
Kinetic simulation of metal chemical-vapor deposition on high aspect ratio features in modern very-large-scale-integrated processing
J. Vac. Sci. Technol. B (May 2000)
Plasma assisted chemical vapor deposition on ‘‘three‐dimensional’’ substrates
J. Vac. Sci. Technol. A (May 1992)