The undesired deposition of W on SiO2 during W chemical vapor deposition on Si with the WF6/SiH4 process has been studied by in situ time resolved mass spectrometry. This study shows that for [SiH4]/[WF6]<0.3 loss of selectivity occurs due to an autocatalytic reaction on the SiO2 surface. Based on the observations, a model for the process has been proposed. In this model, the rate limiting step is the formation of Si2H2n from two SiH4 molecules. This reaction requires a nucleation site, probably an impurity in the SiO2 or adjacent metallic areas, and is retarded by WF6. Subsequently, the Si2H2n reacts with WF6 to a W‐containing species that will then also act as a nucleation site. When the density of W‐containing species approaches monolayer coverage, these species react together with Si2H2n, thus forming areas of metallic W.
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Research Article|
May 01 1994
Loss of selectivity during W chemical vapor deposition on Si using the WF6/SiH4 process
P. A. C. Groenen;
P. A. C. Groenen
Eindhoven University of Technology, Faculty of Physics, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
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Ö. F. Tekcan;
Ö. F. Tekcan
Eindhoven University of Technology, Faculty of Physics, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
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J. G. A. Hölscher;
J. G. A. Hölscher
Eindhoven University of Technology, Faculty of Physics, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
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H. H. Brongersma
H. H. Brongersma
Eindhoven University of Technology, Faculty of Physics, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
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P. A. C. Groenen
Ö. F. Tekcan
J. G. A. Hölscher
H. H. Brongersma
Eindhoven University of Technology, Faculty of Physics, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
J. Vac. Sci. Technol. A 12, 737–745 (1994)
Article history
Received:
October 04 1993
Accepted:
January 29 1994
Citation
P. A. C. Groenen, Ö. F. Tekcan, J. G. A. Hölscher, H. H. Brongersma; Loss of selectivity during W chemical vapor deposition on Si using the WF6/SiH4 process. J. Vac. Sci. Technol. A 1 May 1994; 12 (3): 737–745. https://doi.org/10.1116/1.578816
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