(BaSr)TiO3 thin films were deposited on an indium tin oxide (ITO)‐coated glass substrate at the different substrate temperature of 350, 450, and 550 °C by means of rf magnetron sputtering method. The dependency of dielectric constant (ε′) and loss (tan δ) of (BaSr)TiO3 thin films as a function of frequency (0.3–1000 kHz) was studied. It was observed that there was a possibility for the oxidation of the ITO layer to be one of the causes of dielectric anomalies around 100 kHz. Dielectric constant and tan δ became larger with the increase of deposition temperature. As the deposition temperature increases, the leakage current also increases and the breakdown field decreases from 2.5 to 1.97 MV/cm. These variations of electrical properties can be clearly explained by the increase of mobile carrier‐oxygen vacancy‐in (BaSr)TiO3 thin films.
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March 1994
Research Article|
March 01 1994
Electrical properties of radio frequency magnetron‐sputtered (BaSr)TiO3 thin films on indium tin oxide‐coated glass substrate
Tae Song Kim;
Tae Song Kim
Department of Ceramic Science and Engineering, KAIST, 373‐1 Kuseong‐dong, Youseong‐gu, Taejeon 305‐701, Korea
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Chong Hee Kim;
Chong Hee Kim
Department of Ceramic Science and Engineering, KAIST, 373‐1 Kuseong‐dong, Youseong‐gu, Taejeon 305‐701, Korea
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Myung Hwan Oh
Myung Hwan Oh
Division of Electronics and Information Technology, KIST, 39‐1 Haweolgog‐dong, Seongbuk‐gu, Seoul 136‐791, Korea
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J. Vac. Sci. Technol. A 12, 529–532 (1994)
Article history
Received:
August 16 1993
Accepted:
December 18 1993
Citation
Tae Song Kim, Chong Hee Kim, Myung Hwan Oh; Electrical properties of radio frequency magnetron‐sputtered (BaSr)TiO3 thin films on indium tin oxide‐coated glass substrate. J. Vac. Sci. Technol. A 1 March 1994; 12 (2): 529–532. https://doi.org/10.1116/1.579163
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