The effects of several patterning process steps on the critical current Jc and surface resistance Rs of YBa2Cu3O7 films are described. Included are two off‐axis sputtering processes and a metalorganic chemical‐vapor deposition (MOCVD) process, all producing in situ superconducting films with c‐axis epitaxial orientation. Jc and Rs parameters were measured by mutual inductance and parallel plate resonator techniques, respectively, so that the films did not require patterning for the measurement. Applying a polymer film and stripping, either with acetone or with an O2 plasma, resulted in no change in Rs. Brief ion milling, as well as baking at 185 °C with polymer film present, caused moderate degradation (∼25 μΩ) for films deposited on MgO (both sputtered and MOCVD). The damage caused by ion milling sputtered films on LaAlO3 was considerably greater (∼100 μΩ); photoresist developer also had a significant effect. The degree of degradation in Rs for these films suggests that the surface damage results in secondary effects that penetrate well into the film. This damage was not removed by annealing in O2; in fact it was made substantially worse. Jc was increased slightly by all processes, by an amount ranging from 5% to 50%.
Effects of processing on electrical properties of YBa2Cu3O7 films. II. In situ deposition processes
James R. Sheats, N. Newman, Robert C. Taber, Paul Merchant; Effects of processing on electrical properties of YBa2Cu3O7 films. II. In situ deposition processes. J. Vac. Sci. Technol. A 1 March 1994; 12 (2): 388–392. https://doi.org/10.1116/1.579252
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