The use of synchrotron radiation to convert diethylzinc and diethyltelluride molecules into ZnTe has been employed for ZnTe growth. The formation of ZnTe epitaxial layer on (100) oriented GaAs substrate at room temperature is experimentally demonstrated. It is shown by x‐ray photoelectron spectroscopy that no carbon is included in the film.
Low temperature growth of ZnTe by synchroton radiation using metalorganic sources
Makoto Ikejiri, Toshihiro Ogata, Hiroshi Ogawa, Mitsuhiro Nishio, Akira Yoshida; Low temperature growth of ZnTe by synchroton radiation using metalorganic sources. J. Vac. Sci. Technol. A 1 March 1994; 12 (2): 278–281. https://doi.org/10.1116/1.578868
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