We have developed an advanced, research‐oriented electron beam lithography system using a three channel arbitrary wave form generator and a scanning electron microscope. The system is capable of exposing patterns with features less than 100 nm over scan fields greater than 1.0 mm, as well as features less than 20 nm in smaller scan fields. Other system features include capabilities for registration and for generating exposure matrices for evaluating new electron beam resists and optimizing exposure parameters. We report the details of the system and show results made possible by our system.

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