Characterization of Tb at the interface of SiN/TbFeCo film by Auger electron spectroscopy

The characterization of Tb at the interface of SiN/TbFeCo layers was carried out by Auger electron spectroscopy. The Auger spectrum of Tb in the TbFeCo layer was the same as that of Tb metal. Although oxygen was not detected at the interface, the Auger spectrum of Tb at the interface was similar to that of Tb oxide. Tb nitride was prepared by ion implantation of nitrogen onto Tb metal, and the Auger spectrum of Tb nitride was found to be similar to that of Tb oxide. Therefore, it was confirmed that Tb reacted with nitrogen of SiN layer and Tb nitride was formed at the interface. The thickness of the Tb nitride layer was estimated to be about 5 nm. Further, the spectra of Gd nitride and Dy nitride are also reported.