Application of computational fluid modeling to the development of semiconductor chemical vapor deposition systems

A computational fluid dynamics model was developed to simulate atmospheric pressure chemical vapor deposition of silicate glasses. The model is used to examine chamber geometry and substrate placement effects on fluid flow and temperature profiles. The reaction of tetraethyl orthosilicate (TEOS) and ozonated oxygen to form undoped silicate glass is modeled. Comparison between model predictions and experimental data suggests that ozone is essential for initiating the overall reaction at deposition temperatures between 300 and 550 °C. At deposition temperatures over 300 °C, no ozone is present at the wafer surface. A correlation is found between deposition rate and the time that TEOS is combined with ozone in the gas stream at temperatures below 200 °C.