Thin Au films on GaAs(100) are extremely sensitive to bombardment by low energy (5 keV) He ions that are often used as the analysis projectiles in ion scattering spectroscopy. Fluences as low as 1015 ions cm−2 cause enhanced diffusion of the Au into the GaAs substrate.
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Research Article| July 01 1992
Observed ion mixing of Au with GaAs(001) during low‐energy ion scattering
Robert M. Charatan;
Robert M. Charatan, R. Stanley Williams; Observed ion mixing of Au with GaAs(001) during low‐energy ion scattering. J. Vac. Sci. Technol. A 1 July 1992; 10 (4): 2606–2608. https://doi.org/10.1116/1.577945
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