The emerging field of nanoelectronics demands innovative methods to fabricate nanometer‐scale structures. Such structures will play a critical role in the quantum‐effect device physics of future highly integrated circuit architectures. An integrated approach to compound semiconductor nanostructure fabrication based on scanning tunneling microscope (STM) nanolithography, molecular‐beam epitaxy, and reactive ion etching techniques is described. The critical elements of this approach, which have been demonstrated recently, are reviewed. Prospects for the coevolutionary development of nanoelectronics and STM‐based fabrication and characterization are considered.
Integration of scanning tunneling microscope nanolithography and electronics device processing
J. A. Dagata, W. Tseng, J. Bennett, E. A. Dobisz, J. Schneir, H. H. Harary; Integration of scanning tunneling microscope nanolithography and electronics device processing. J. Vac. Sci. Technol. A 1 July 1992; 10 (4): 2105–2113. https://doi.org/10.1116/1.577990
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