Theoretical and experimental study of large aperture low energy e‐beam source for semiconductor processing

Experimental and theoretical examination of the large aperture low energy electron beam source based on the design of a direct‐current (dc) open discharge is made. This source has been tested as the etching system for both the monocrystal Si and the photoresist under the different gas mixtures. This dc system appears to be used to treat insulators. The numerical model to simulate plasma processes in the considered system is developed. Results of model simulation are compared with the experimental data.