Plasma etching techniques for III‐V compound semiconductors are reviewed, emphasizing design considerations in the choice of gases, discharge parameters, and substrate temperature. Mechanisms are proposed for anisotropic, isotropic, and crystallographic chemical etching. Applications of plasma etching in device fabrication are given.
This content is only available via PDF.
© 1983 American Vacuum Society.
1983
American Vacuum Society
You do not currently have access to this content.