Plasma etching techniques for III‐V compound semiconductors are reviewed, emphasizing design considerations in the choice of gases, discharge parameters, and substrate temperature. Mechanisms are proposed for anisotropic, isotropic, and crystallographic chemical etching. Applications of plasma etching in device fabrication are given.
Skip Nav Destination
Research Article| April 01 1983
Plasma etching of III‐V compound semiconductors
V. M. Donnelly;
D. L. Flamm;
V. M. Donnelly, D. L. Flamm, D. E. Ibbotson; Plasma etching of III‐V compound semiconductors. J. Vac. Sci. Technol. A 1 April 1983; 1 (2): 626–628. https://doi.org/10.1116/1.572194
Download citation file: