The internal photoelectric‐effect technique in combination with multiple internal reflection measurements has been used for quantitative measurement of impurities and defect‐related traps in the thin Si3N4 insulating film of a metal–nitride–oxide–semiconductor device, and their correlation with film processing conditions. The hydrogen content in the film showed an increase of approximately 3% for a decrease of deposition temperatures from 950 to 700 °C and corresponding increase in trapped electron density from 0.55×1018 to 2.0×1018 cm3. The multiple internal reflection measurements indicated that the variation in the hydrogen content in the Si3N4 film was predominantly related to a variation in hydrogen‐to‐silicon bonding while the hydrogen bonded to nitrogen was relatively constant. The results suggest that hydrogen, in addition to excess silicon, and perhaps other structural defects, plays a role in determining trapped electron densities in silicon nitride.
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Research Article| April 01 1983
Hydrogen‐related memory traps in thin silicon nitride films
Vikram J. Kapoor;
Robert S. Bailey;
Vikram J. Kapoor, Robert S. Bailey, Herman J. Stein; Hydrogen‐related memory traps in thin silicon nitride films. J. Vac. Sci. Technol. A 1 April 1983; 1 (2): 600–603. https://doi.org/10.1116/1.571966
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