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Journal of Vacuum Science & Technology A has a scope that is focused on the understanding of interfaces and surfaces at a fundamental level and to advance state-of-the-art technological applications of surface science and thin film materials science.
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Research Article
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February 13 2025
Jatin Vikram Singh, Matthew N. Disiena et al.
Tungsten diselenide, WSe2, is attractive as a channel material for p-channel metal–oxide–semiconductor field effect transistors (PMOSFETs) using transition metal dichalcogenide (TMD) nanosheets for ...
Research Article
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February 12 2025
Yudong Li, Hubertus Marbach et al.
Ruthenium (Ru) films have recently received attention in the microelectronics industry due to their unique physical and chemical properties. In this work, we investigated etching of Ru using an ...
Research Article
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February 10 2025
Scott A. Chambers, Peter V. Sushko et al.
We demonstrate that assigning formal charges to transition metal (TM) cations based on core-level (CL) x-ray photoemission binding energies in oxides leads to physically inconsistent pictures of ...
Editor's Picks
Research Article
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February 12 2025
Hojin Kang, Sangbae Lee et al.
A comparative study on the atomic layer etching (ALE) process window was conducted for tantalum nitride (TaN) using nitrogen trifluoride (NF3) and carbon tetrafluoride (CF4) plasmas. The TaN surface ...
Research Article
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February 10 2025
Zsófia Baji, Zsolt Fogarassy et al.
The present paper reports on the atomic layer deposition of vanadium sulfide (VS) layers from tetrakis(ethylmethylamino)vanadium and H2S. The deposition of VS layers with these precursors has proven ...
Research Article
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February 05 2025
Jay V. Swarup, Heng-Ray Chuang et al.
We have examined the atomic layer deposition (ALD) of Al2O3 using a nonpyrophoric precursor, which possesses only Al–N bonds and no Al–C bonds: Al(N(CH3)2)2(–N(C2H5)–C2H4–N(C2H5)2), which we refer to ...
Most Recent
Research Article
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February 14 2025
Tetsuya Masuda, Miya Fujita et al.
The interpretation of time-of-flight secondary ion mass spectrometry (ToF-SIMS) data is often complicated because ToF-SIMS has a high sensitivity for detecting extremely low amounts of molecules and ...
Research Article
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February 13 2025
Topias Jussila, Joona Pekkanen et al.
Metal-organic thin films fabricated through industry-feasible atomic/molecular layer deposition (ALD/MLD) routes are highly attractive materials with diverse functional properties, but they suffer ...
Research Article
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February 13 2025
Jie Zan, ZiHan Liu et al.
As an efficient surface treatment method, microarc oxidation (MAO) solves the problems of severe pollution and high cost of traditional methods such as electroplating and anodic oxidation. The ...
Low-temperature etching of silicon oxide and silicon nitride with hydrogen fluoride
Thorsten Lill, Mingmei Wang, et al.
Atomic layer deposition of nanofilms on porous polymer substrates: Strategies for success
Brian C. Welch, Jeanne Casetta, et al.
Surface passivation approaches for silicon, germanium, and III–V semiconductors
Roel J. Theeuwes, Wilhelmus M. M. Kessels, et al.

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