Journal of Vacuum Science & Technology A

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Current Issue

Volume 43,

Issue 1,

January 2025

Focus and Coverage

Journal of Vacuum Science & Technology A has a scope that is focused on the understanding of interfaces and surfaces at a fundamental level and to advance state-of-the-art technological applications of surface science and thin film materials science.

Editor-in-Chief

Eray Aydil

Editors

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Featured Articles

Research Article

| December 16 2024

Luminescent silicon nanocrystals capped with naturally occurring ligands

Benjamin J. Stacy, Loc Ngo et al.

Several naturally occurring terpenes, including limonene, valencene, eugenol, eugenol acetate, and linalool, have alkene functional groups that can add to a silicon (Si) surface by hydrosilylation. ...

Perspective

| December 13 2024

Perspective on breakdown in Ga₂O₃ vertical rectifiers

Jian-Sian Li, Chao-Ching Chiang et al.

While Ga₂O₃ rectifiers have shown promising performance, there is a lack of consensus on the significance of the few device breakdown results above 10 kV. We provide some perspective on how these are ...

Research Article

| December 04 2024

Characterization of the ion angle distribution function in low-pressure plasmas using a micro-electromechanical system

M. Melzer, K. Meinel et al.

In recent years, micro-electromechanical systems (MEMSs) have found broad applications in various sensors. However, aside from quartz crystal microbalances, they have not yet been utilized in plasma ...

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Editor's Picks

Letter

| January 08 2025

Ultrahigh purity plasma-enhanced atomic layer deposition and electrical properties of epitaxial scandium nitride

Gilbert B. Rayner, Jr., Noel O’Toole et al.

Scandium nitride (ScN) by plasma-enhanced atomic layer deposition (PEALD) was demonstrated on silicon (100), sapphire (0001), and magnesium oxide (001) substrates under ultrahigh purity conditions ...

Research Article

| January 08 2025

Si-doped HZO and ZrO₂ for hysteresis free high-k dielectric

Harshil Kashyap, Ping-Che Lee et al.

Thin high-k dielectrics play a crucial role in achieving low leakage and high capacitance dynamic random-access memory (DRAM) cells. Various high-k materials, such as amorphous HfO₂, have shown ...

Research Article

| January 06 2025

Selective molecular gas phase etching in layered high aspect-ratio nanostructures for semiconductor processing. I. Modeling framework and simulation

Zach Zajo, David S. L. Mui et al.

The need for precise control of nanoscale geometric features poses a challenge in manufacturing advanced gate-all-around nanotransistors. The high material selectivity required in fabricating these ...

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Most Recent

Research Article

| January 14 2025

Secondary ion mass spectrometry relative sensitivity factor of ⁶⁹Ga in ZnS

Hayat Soufiani, Mikhail Klimov et al.

Multispectral zinc sulfide (MS-ZnS) is an important broadband optical material used in various imaging and sensing technologies. To address the challenge of withstanding aerodynamic loads during ...

Research Article

| January 13 2025

Boron atoms migration during epitaxial growth of boron-doped single-crystal diamond

Yulong Zhu, Xingyan Li et al.

Boron-doped diamond (BDD) films are essential for the fabrication of electronic devices with P⁺ or P⁻ layers. However, the boron atoms in the intrinsic diamond substrates due to the concentration ...

Erratum

| January 13 2025