Journal of Vacuum Science & Technology A

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Current Issue

Volume 43,

Issue 3,

May 2025

Focus and Coverage

Journal of Vacuum Science & Technology A has a scope that is focused on the understanding of interfaces and surfaces at a fundamental level and to advance state-of-the-art technological applications of surface science and thin film materials science.

Editor-in-Chief

Eray Aydil

Editors

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Featured Articles

Research Article

| April 09 2025

Benchmarking large language models for materials synthesis: The case of atomic layer deposition

Angel Yanguas-Gil, Matthew T. Dearing et al.

In this work, we introduce an open-ended question benchmark, ALDbench, to evaluate the performance of large language models (LLMs) in materials synthesis, and, in particular, in the field of atomic ...

Review Article

| March 18 2025

Recent trends in thermal atomic layer deposition chemistry

Georgi Popov, Miika Mattinen et al.

In this review, we highlight new atomic layer deposition (ALD) precursors and process chemistries based on the ALD database found in atomiclimits.com. The aim was to compare the processes before and ...

Research Article

| March 17 2025

The case for denoising/smoothing X-ray photoelectron spectroscopy data by Fourier analysis

Alvaro J. Lizarbe, Kristopher S. Wright et al.

Traditionally, the smoothing of X-ray photoelectron spectroscopy (XPS) data has been avoided. Data smoothing should not be viewed as a means of “fixing” poorly collected or extremely noisy XPS data. ...

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Editor's Picks

Research Article

| March 27 2025

Machine-learning-enabled on-the-fly analysis of RHEED patterns during thin film deposition by molecular beam epitaxy

Tiffany C. Kaspar, Sarah Akers et al.

Thin film deposition is a fundamental technology for the discovery, optimization, and manufacturing of functional materials. Deposition by molecular beam epitaxy (MBE) typically employs reflection ...

Research Article

| March 24 2025

On simulating thin-film processes at the atomic scale using machine-learned force fields

S. Kondati Natarajan, J. Schneider et al.

Atomistic modeling of thin-film processes provides an avenue not only for discovering key chemical mechanisms of the processes but also to extract quantitative metrics on the events and reactions ...

Research Article

| March 20 2025

Trap states and hydrogenation of implanted Si in semi-insulating Ga₂O₃(Fe)

A. Y. Polyakov, I. V. Schemerov et al.

The electrical properties and deep trap spectra of semi-insulating Ga₂O₃(Fe) implanted with Si ions and subsequently annealed at 1000 °C were investigated. A significant discrepancy was observed ...

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Research Article

| May 13 2025

Aluminum silicate deposition on polyethylene naphthalate films and its application to Cs absorber in Cs aqueous solution

Hibiki Takeda, Haruto Suzuki et al.

A roll-to-roll system to continuously remove Cs ions from radioactive water requires cation absorbers deposited on flexible films. To deposit a cation absorber, aluminum silicate, on the polyethylene ...

Research Article

| May 13 2025

Kinetic Monte Carlo simulations of aging in δ-Pu

T. Oppelstrup, N. Bertin et al.

We have developed a first-passage kinetic Monte Carlo approach for materials aging to investigate the sensitivity of void swelling to model parameters, including helium bubble density and size ...

Research Article

| May 12 2025

Defining the relative proton irradiation hardness of β-Ga₂O₃

Hsiao-Hsuan Wan, Fan Ren et al.

The correlation between the carrier removal rate (CRR) in n-type Ga₂O₃ and the nonionizing energy loss (NIEL) by MeV protons during irradiation of rectifier structures is reported. A dependence of ...

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