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Journal Articles

Compositionally graded Ba_1−xSr_xTiO₃ thin film for SIMS applications

J. Scola, J. Garcia, F. Jomard, E. Loire, J. Wolfman, B. Negulescu, G. Z. Liu, M.-A. Pinault-Thaury

J. Vac. Sci. Technol. B 43, 044004 (2025)

https://doi.org/10.1116/6.0004549

Published: June 2025

View articletitled, Compositionally graded Ba1−xSrxTiO3 thin film for SIMS applications

Journal Articles

Effect of glow cleaning bias voltage on microstructure and properties of ion nitriding/multiarc ion plating CrTiAlN composite coatings

Yuanhao Qi, Xiao Nan, Qiaoqin Guo, Zhong Yang

J. Vac. Sci. Technol. B 43, 044002 (2025)

https://doi.org/10.1116/6.0004631

Published: June 2025

View articletitled, Effect of glow cleaning bias voltage on microstructure and properties of ion nitriding/multiarc ion plating CrTiAlN composite coatings

Journal Articles

Effect of Ag layer thickness and annealing treatment on the transmittance and conductivity of transparent antennas fabricated using ITO/Ag/ITO structures

Yoji Yasuda, Yuka Saitou, Fukuro Koshiji, Takayuki Uchida

J. Vac. Sci. Technol. B 43, 042204 (2025)

https://doi.org/10.1116/6.0004573

Published: June 2025

View articletitled, Effect of Ag layer thickness and annealing treatment on the transmittance and conductivity of transparent antennas fabricated using ITO/Ag/ITO structures

Journal Articles

Method for monitoring high aspect ratio contact dry etching process using calibration and normalization method for optical emission spectroscopy

Jitae Park, Sejin Oh, Sung-Ho Jang, Dougyong Sung, Jin-Young Bang, Sung-Il Cho

J. Vac. Sci. Technol. B 43, 044202 (2025)

https://doi.org/10.1116/6.0004477

Published: June 2025

View articletitled, Method for monitoring high aspect ratio contact dry etching process using calibration and normalization method for optical emission spectroscopy

Journal Articles

Resistivity improvement of flexible transparent conductive films with Cu inserted intermediate layer

Nene Yoshikawa, Yukio Yoshimura, Atsushi Nitta

J. Vac. Sci. Technol. B 43, 042203 (2025)

https://doi.org/10.1116/6.0004528

Published: June 2025

View articletitled, Resistivity improvement of flexible transparent conductive films with Cu inserted intermediate layer

Journal Articles

Low-temperature Al_xGa_1−xN growth by combined electron cyclotron resonance sputtering and magnetron sputtering

Hironori Torii, Shinsuke Matsui

J. Vac. Sci. Technol. B 43, 042202 (2025)

https://doi.org/10.1116/6.0004592

Published: June 2025

View articletitled, Low-temperature AlxGa1−xN growth by combined electron cyclotron resonance sputtering and magnetron sputtering

Journal Articles

Characteristics of inductively coupled plasma radio frequency ion sources in commercial ion implanters

Jong Jin Hwang, Hyo Jun Sim, Seung Jae Moon

J. Vac. Sci. Technol. B 43, 044201 (2025)

https://doi.org/10.1116/6.0004560

Published: May 2025

View articletitled, Characteristics of inductively coupled plasma radio frequency ion sources in commercial ion implanters

Journal Articles

Heating of C s 2 Te photocathode via field emission and radiofrequency pulsed heating: Implication toward breakdown

Ryo Shinohara, Soumendu Bagchi, Evgenya Simakov, Danny Perez, Sergey V. Baryshev

J. Vac. Sci. Technol. B 43, 034003 (2025)

https://doi.org/10.1116/5.0263776

Published: May 2025

View articletitled, Heating of C s 2 Te photocathode via field emission and radiofrequency pulsed heating: Implication toward breakdown

Journal Articles

Real-time determination of sputtered TiC film composition using optical emission spectroscopy

Susumu Imashuku

J. Vac. Sci. Technol. B 43, 034002 (2025)

https://doi.org/10.1116/6.0004474

Published: May 2025

View articletitled, Real-time determination of sputtered TiC film composition using optical emission spectroscopy

Journal Articles

Integration of in situ field-directed sputter sharpening in Scienta Omicron systems

Stephanie D. Lough, Megan Cowie, Adam Bottomley, Brandon Blue, Masahiro Ishigami

J. Vac. Sci. Technol. B 43, 035001 (2025)

https://doi.org/10.1116/6.0004517

Published: May 2025

View articletitled, Integration of in situ field-directed sputter sharpening in Scienta Omicron systems

Journal Articles

Low-temperature (<300 °C) crystalline Al₂O₃ thin film deposition by resistive thermal evaporation

Kunal Kumar, Marc Cahay

J. Vac. Sci. Technol. B 43, 032206 (2025)

https://doi.org/10.1116/6.0004424

Published: May 2025

View articletitled, Low-temperature (<300 °C) crystalline Al2O3 thin film deposition by resistive thermal evaporation

Journal Articles

Selective wet etching of atomic layer deposited ferroelectric hafnium zirconium oxide and hafnium oxide thin films

Rushi Jani, David MacMahon, Santosh K. Kurinec

J. Vac. Sci. Technol. B 43, 030602 (2025)

https://doi.org/10.1116/6.0004562

Published: April 2025

View articletitled, Selective wet etching of atomic layer deposited ferroelectric hafnium zirconium oxide and hafnium oxide thin films

Journal Articles

Side-by-side evaluation of the outgassing rate and ultimate pressure achieved inside tubes made of low-carbon and stainless steel

Aiman H. Al-Allaq, Md Abdullah Mamun, Matt Poelker, Abdelmageed Elmustafa

J. Vac. Sci. Technol. B 43, 034203 (2025)

https://doi.org/10.1116/6.0004446

Published: April 2025

View articletitled, Side-by-side evaluation of the outgassing rate and ultimate pressure achieved inside tubes made of low-carbon and stainless steel

Journal Articles

Through-chip porous layer fabrication by plasma etching with protective film deposition

Shimpei Ida, Mizuki Takagishi, Moemi Nakashima, Masanori Hayase

J. Vac. Sci. Technol. B 43, 033001 (2025)

https://doi.org/10.1116/6.0004305

Published: April 2025

View articletitled, Through-chip porous layer fabrication by plasma etching with protective film deposition

Journal Articles

Investigation of tilted etching of Si₃N₄ using CF₄/O₂ plasma: Process development and mechanism study

Zhihong Gao, Leyi Zhang, Yongzhi Fang, Dongyu Cen, Maoxiang Liu, Wenli Wu, Yan Ding

J. Vac. Sci. Technol. B 43, 032801 (2025)

https://doi.org/10.1116/6.0004412

Published: April 2025

View articletitled, Investigation of tilted etching of Si3N4 using CF4/O2 plasma: Process development and mechanism study

Journal Articles

Bias stability enhancement of metal/Al₂O₃/AlN/GaN capacitors by high-temperature plasma-enhanced atomic layer deposition of thin AlN interlayer

Atsushi Hiraiwa, Kiyotaka Horikawa, Hiroshi Kawarada

J. Vac. Sci. Technol. B 43, 032205 (2025)

https://doi.org/10.1116/6.0004310

Published: April 2025

View articletitled, Bias stability enhancement of metal/Al2O3/AlN/GaN capacitors by high-temperature plasma-enhanced atomic layer deposition of thin AlN interlayer

Journal Articles

Effect of quality improvement in active region on temperature characteristics of GaN-based ultraviolet laser diode

Yujie Huang, Jing Yang, Degang Zhao, Zongshun Liu, Feng Liang, Ping Chen

J. Vac. Sci. Technol. B 43, 032204 (2025)

https://doi.org/10.1116/6.0004363

Published: April 2025

View articletitled, Effect of quality improvement in active region on temperature characteristics of GaN-based ultraviolet laser diode

Journal Articles

Ultrathin tantalum films for Schottky contacts on 4H silicon carbide

Renato M. Beraldo, Rodrigo R. César, Melissa Mederos, Jacilene M. Medeiros, Andrei Alaferdov, Érick A. Santos, Ednan Joanni, Thebano E. A. Santos, Ricardo C. Teixeira, Marcos V. Puydinger dos Santos, Renato A. Minamisawa, José Alexandre Diniz

J. Vac. Sci. Technol. B 43, 033202 (2025)

https://doi.org/10.1116/6.0004313

Published: April 2025

View articletitled, Ultrathin tantalum films for Schottky contacts on 4H silicon carbide

Journal Articles

Controlled preparation of tungsten diselenide thin films via chemical vapor deposition

Pingfan Ning, Xuerong Li, Feifei Lan, Xiangyu Li, Yingmin Wang, Hongjuan Cheng, Yujian Wang

J. Vac. Sci. Technol. B 43, 030601 (2025)

https://doi.org/10.1116/6.0004352

Published: April 2025

View articletitled, Controlled preparation of tungsten diselenide thin films via chemical vapor deposition

Journal Articles

Synergistic regulation of device performance by structural parameters of vertical side-gate type vacuum channel field emission transistor

Wenhua Tang, Kerun Chen, Jie Li, Zhihua Shen, Xiao Wang, Shengli Wu

J. Vac. Sci. Technol. B 43, 033201 (2025)

https://doi.org/10.1116/6.0004371

Published: March 2025

View articletitled, Synergistic regulation of device performance by structural parameters of vertical side-gate type vacuum channel field emission transistor

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Compositionally graded Ba_1−xSr_xTiO₃ thin film for SIMS applications

Effect of glow cleaning bias voltage on microstructure and properties of ion nitriding/multiarc ion plating CrTiAlN composite coatings

Effect of Ag layer thickness and annealing treatment on the transmittance and conductivity of transparent antennas fabricated using ITO/Ag/ITO structures

Method for monitoring high aspect ratio contact dry etching process using calibration and normalization method for optical emission spectroscopy

Resistivity improvement of flexible transparent conductive films with Cu inserted intermediate layer

Low-temperature Al_xGa_1−xN growth by combined electron cyclotron resonance sputtering and magnetron sputtering

Characteristics of inductively coupled plasma radio frequency ion sources in commercial ion implanters

Heating of C s 2 Te photocathode via field emission and radiofrequency pulsed heating: Implication toward breakdown

Real-time determination of sputtered TiC film composition using optical emission spectroscopy

Integration of in situ field-directed sputter sharpening in Scienta Omicron systems

Low-temperature (<300 °C) crystalline Al₂O₃ thin film deposition by resistive thermal evaporation

Selective wet etching of atomic layer deposited ferroelectric hafnium zirconium oxide and hafnium oxide thin films

Side-by-side evaluation of the outgassing rate and ultimate pressure achieved inside tubes made of low-carbon and stainless steel

Through-chip porous layer fabrication by plasma etching with protective film deposition

Investigation of tilted etching of Si₃N₄ using CF₄/O₂ plasma: Process development and mechanism study

Bias stability enhancement of metal/Al₂O₃/AlN/GaN capacitors by high-temperature plasma-enhanced atomic layer deposition of thin AlN interlayer

Effect of quality improvement in active region on temperature characteristics of GaN-based ultraviolet laser diode

Ultrathin tantalum films for Schottky contacts on 4H silicon carbide

Controlled preparation of tungsten diselenide thin films via chemical vapor deposition

Synergistic regulation of device performance by structural parameters of vertical side-gate type vacuum channel field emission transistor

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