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Journal Articles

Observation of low-resistance Al and Ni p-type ohmic contacts to dilute GeC and GeCSn alloys

Jibesh K. Saha, Saif A. A. Taqy, Pallab K. Sarkar, Imteaz Rahaman, Augustus W. Arbogast, Tuhin Dey, Andrei Dolocan, Md. Reaz Rahman Munna, Khorshed Alam, Daniel Wasserman, Seth R. Bank, Mark A. Wistey
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 062211 (2024)
https://doi.org/10.1116/6.0003739
Published: December 2024
View article titled, Observation of low-resistance Al and Ni p-type ohmic contacts to dilute GeC and GeCSn alloys
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Journal Articles

Impact of in situ heating on the structure, morphology, and electrical and optical properties of RF-sputtered NiO thin films

Nguyen Khac Binh, Pham Ngoc Yen Nhi, Tran Bao Quan, Pham Minh Tam, Nguyen Ngoc Phuong, Dao Minh Tuan, Pham Thi Kim Hang, Pham Hoai Phuong
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 062205 (2024)
https://doi.org/10.1116/6.0003939
Published: November 2024
View article titled, Impact of <em>in situ</em> heating on the structure, morphology, and electrical and optical properties of RF-sputtered NiO thin films
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Journal Articles

Optical and electronic properties of Ge1−xSnx/Si alloys grown by remote plasma-enhanced chemical vapor deposition

Kevin K. Choe, Daniel Felker, Bruce Claflin, Gordon Grzybowski, Christina L. Dugan
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 052208 (2024)
https://doi.org/10.1116/6.0003759
Published: August 2024
View article titled, Optical and electronic properties of Ge<sub>1−<em>x</em></sub>Sn<em><sub>x</sub></em>/Si alloys grown by remote plasma-enhanced chemical vapor deposition
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Journal Articles

Effect of sputter power on red-shifted optoelectronic properties in magnetron sputtered Ag/ZnO thin films

GuruSampath Kumar A., Mahender C., Mahesh Kumar U., Obulapathi L., HemaChandra Rao B., Yamuna P., Thirupathi A., SomaSundar L. N. V. H., Venkata Ramana G.
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 054002 (2024)
https://doi.org/10.1116/6.0003813
Published: August 2024
View article titled, Effect of sputter power on red-shifted optoelectronic properties in magnetron sputtered Ag/ZnO thin films
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Journal Articles

Near zero-field magnetoresistance and defects in gallium nitride pn junctions

M. J. Elko, D. T. Hassenmayer, A. A. Higgins, P. M. Lenahan, M. E. Flatté, D. Fehr, M. D. Craven, T. D. Larsen
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 052205 (2024)
https://doi.org/10.1116/6.0003855
Published: August 2024
View article titled, Near zero-field magnetoresistance and defects in gallium nitride pn junctions
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Journal Articles

GaAs/GeSn/Ge n–i–p diodes and light emitting diodes formed via grafting

Jie Zhou, Haibo Wang, Po Rei Huang, Shengqiang Xu, Yang Liu, Jiarui Gong, Jianping Shen, Daniel Vicent, Samuel Haessly, Alireza Abrand, Parsian K. Mohseni, Munho Kim, Shui-Qing Yu, Guo-En Chang, Xiao Gong, Zhenqiang Ma
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 042213 (2024)
https://doi.org/10.1116/6.0003619
Published: July 2024
View article titled, GaAs/GeSn/Ge <em>n–i–p</em> diodes and light emitting diodes formed via grafting
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Journal Articles

Transition from the regime of thermionic emission to the space-charge limited current regime under strong Shottky effects

D. Karaoulanis, J. P. Xanthakis
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 042212 (2024)
https://doi.org/10.1116/6.0003700
Published: July 2024
View article titled, Transition from the regime of thermionic emission to the space-charge limited current regime under strong Shottky effects
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Journal Articles

Magneto-transport study on Sn-rich Sn1−xGex thin films enabled by CdTe buffer layer

Rabindra Basnet, Dinesh Upreti, Tyler T. McCarthy, Zheng Ju, Allison M. McMinn, M. M. Sharma, Yong-Hang Zhang, Jin Hu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 042210 (2024)
https://doi.org/10.1116/6.0003564
Published: July 2024
View article titled, Magneto-transport study on Sn-rich Sn<sub>1−x</sub>Ge<sub>x</sub> thin films enabled by CdTe buffer layer
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Journal Articles

Emission enhancement of GaN field emitter arrays in an N2 environment

Reza Farsad Asadi, Tao Zheng, Pao-Chuan Shih, Tomás Palacios, Akintunde I. Akinwande, Bruce Gnade
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 044004 (2024)
https://doi.org/10.1116/6.0003704
Published: July 2024
View article titled, Emission enhancement of GaN field emitter arrays in an N<sub>2</sub> environment
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Journal Articles

Electronic and optical properties of lithium-doped boron nitride nanoribbons using density functional theory

Farzaneh Safdarian, Farzad Ahmadian, Rohollah Zare Hasan Abad, Hojat Allah Badehian
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 042201 (2024)
https://doi.org/10.1116/6.0003635
Published: May 2024
View article titled, Electronic and optical properties of lithium-doped boron nitride nanoribbons using density functional theory
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Journal Articles

Excitonic effects in the optical absorption of gapless semiconductor α-tin near the direct bandgap

Editor’s Pick
Stefan Zollner
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 022203 (2024)
https://doi.org/10.1116/6.0003278
Published: February 2024
View article titled, Excitonic effects in the optical absorption of gapless semiconductor <em>α</em>-tin near the direct bandgap
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Includes: Supplementary data
Journal Articles

Degradation of GaN field emitter arrays induced by O2 exposure

Editor’s Pick
Reza Farsad Asadi, Tao Zheng, Pao-Chuan Shih, Tomás Palacios, Akintunde I. Akinwande, Bruce Gnade
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 014001 (2024)
https://doi.org/10.1116/6.0003314
Published: January 2024
View article titled, Degradation of GaN field emitter arrays induced by O<sub>2</sub> exposure
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Journal Articles

Plasma-assisted annealing of Pt-doped rutile TiO2 nanoparticles for enhanced decomposition and bacterial inactivation under general lighting

Retsuo Kawakami, Yuta Makino, Shin-ichiro Yanagiya, Akihiro Shirai, Masahito Niibe, Yoshitaka Nakano
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 012203 (2024)
https://doi.org/10.1116/6.0003101
Published: January 2024
View article titled, Plasma-assisted annealing of Pt-doped rutile TiO<sub>2</sub> nanoparticles for enhanced decomposition and bacterial inactivation under general lighting
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Journal Articles

Doping engineering: Next step toward room temperature performance of terahertz quantum cascade lasers

Nathalie Lander Gower, Shiran Levy, Silvia Piperno, Sadhvikas J. Addamane, John L. Reno, Asaf Albo
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 010801 (2024)
https://doi.org/10.1116/6.0003160
Published: January 2024
View article titled, Doping engineering: Next step toward room temperature performance of terahertz quantum cascade lasers
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Journal Articles

Influence of gate material and diamond surface termination on current conduction in metal/Al2O3/diamond capacitors

Satoshi Okubo, Daisuke Matsumura, Hiroshi Kawarada, Atsushi Hiraiwa
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 012202 (2024)
https://doi.org/10.1116/6.0003272
Published: January 2024
View article titled, Influence of gate material and diamond surface termination on current conduction in metal/Al<sub>2</sub>O<sub>3</sub>/diamond capacitors
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Journal Articles

High-performance normally off AlGaN/GaN high electron mobility transistor with p-type h-BN cap layer

Editor’s Pick
Nan Wang, Haiping Wang, Zhuokun He, Xiaohui Gao, Dunjun Chen, Yukun Wang, Haoran Ding, Yufei Yang, Qianyu Hou, Wenhong Sun
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 062203 (2023)
https://doi.org/10.1116/5.0169900
Published: October 2023
View article titled, High-performance normally off AlGaN/GaN high electron mobility transistor with p-type h-BN cap layer
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Journal Articles

Simulation analyses of carrier dynamics in npn-type GaN-heterojunction bipolar transistors with different hole-concentration p-base layers

Akira Mase, Yusuke Iida, Masaya Takimoto, Yutaka Nikai, Takashi Egawa, Makoto Miyoshi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 052206 (2023)
https://doi.org/10.1116/6.0002577
Published: September 2023
View article titled, Simulation analyses of carrier dynamics in <em>npn</em>-type GaN-heterojunction bipolar transistors with different hole-concentration <em>p</em>-base layers
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Journal Articles

Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film

Fernando M. de Oliveira, Chen Li, Pijush K. Ghosh, Andrian V. Kuchuk, Morgan E. Ware, Yuriy I. Mazur, Gregory J. Salamo
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 052805 (2023)
https://doi.org/10.1116/6.0002866
Published: August 2023
View article titled, Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film
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Includes: Supplementary data
Journal Articles

Plasma-induced energy band evolution for two-dimensional heterogeneous anti-ambipolar transistors

Editor’s Pick
Simran Shahi, Asma Ahmed, Ruizhe Yang, Anthony Cabanillas, Anindita Chakravarty, Maomao Liu, Hemendra Nath Jaiswal, Yu Fu, Yutong Guo, Satyajeetsinh Shaileshsin Jadeja, Hariharan Murugesan, Anthony Butler, Chu Te Chen, Joel Muhigirwa, Mohamed Enaitalla, Jun Liu, Fei Yao, Huamin Li
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 053202 (2023)
https://doi.org/10.1116/6.0002888
Published: August 2023
View article titled, Plasma-induced energy band evolution for two-dimensional heterogeneous anti-ambipolar transistors
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Includes: Supplementary data
Journal Articles

Plasma processing and annealing for defect management at SiO2/Si interface

Shota Nunomura, Takayoshi Tsutsumi, Isao Sakata, Masaru Hori
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 052202 (2023)
https://doi.org/10.1116/6.0002822
Published: August 2023
View article titled, Plasma processing and annealing for defect management at SiO<sub>2</sub>/Si interface
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