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Journal Articles

Simulation analyses of carrier dynamics in npn-type GaN-heterojunction bipolar transistors with different hole-concentration p-base layers

Akira Mase, Yusuke Iida, Masaya Takimoto, Yutaka Nikai, Takashi Egawa, Makoto Miyoshi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 052206 (2023)
https://doi.org/10.1116/6.0002577
Published: September 2023
View article titled, Simulation analyses of carrier dynamics in <em>npn</em>-type GaN-heterojunction bipolar transistors with different hole-concentration <em>p</em>-base layers
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Journal Articles

Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film

Fernando M. de Oliveira, Chen Li, Pijush K. Ghosh, Andrian V. Kuchuk, Morgan E. Ware, Yuriy I. Mazur, Gregory J. Salamo
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 052805 (2023)
https://doi.org/10.1116/6.0002866
Published: August 2023
View article titled, Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film
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Includes: Supplementary data
Journal Articles

Plasma-induced energy band evolution for two-dimensional heterogeneous anti-ambipolar transistors

Simran Shahi, Asma Ahmed, Ruizhe Yang, Anthony Cabanillas, Anindita Chakravarty, Maomao Liu, Hemendra Nath Jaiswal, Yu Fu, Yutong Guo, Satyajeetsinh Shaileshsin Jadeja, Hariharan Murugesan, Anthony Butler, Chu Te Chen, Joel Muhigirwa, Mohamed Enaitalla, Jun Liu, Fei Yao, Huamin Li
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 053202 (2023)
https://doi.org/10.1116/6.0002888
Published: August 2023
View article titled, Plasma-induced energy band evolution for two-dimensional heterogeneous anti-ambipolar transistors
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Includes: Supplementary data
Journal Articles

Plasma processing and annealing for defect management at SiO2/Si interface

Shota Nunomura, Takayoshi Tsutsumi, Isao Sakata, Masaru Hori
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 052202 (2023)
https://doi.org/10.1116/6.0002822
Published: August 2023
View article titled, Plasma processing and annealing for defect management at SiO<sub>2</sub>/Si interface
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Journal Articles

Effects of gases on the field emission performance of silicon gated field emitter array

Ranajoy Bhattacharya, Mason Cannon, Girish Rughoobur, Nedeljko Karaulac, Winston Chern, Reza Farsad Asadi, Zheng Tao, Bruce E. Gnade, Akintunde Ibitayo Akinwande, Jim Browning
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 053201 (2023)
https://doi.org/10.1116/6.0002789
Published: July 2023
View article titled, Effects of gases on the field emission performance of silicon gated field emitter array
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Journal Articles

Effect of praseodymium coating on electron emission from a nanoscale gold field emitter array

L. B. De Rose, D. H. Catanzaro, C. Choi, A. Scherer
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 042801 (2023)
https://doi.org/10.1116/6.0002700
Published: May 2023
View article titled, Effect of praseodymium coating on electron emission from a nanoscale gold field emitter array
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Journal Articles

Exploring the mysteries of topology in quantum materials by spin-resolved spectroscopies

C. Tusche, K. Hagiwara, X. L. Tan, Y.-J. Chen, C. M. Schneider
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 042201 (2023)
https://doi.org/10.1116/6.0002707
Published: May 2023
View article titled, Exploring the mysteries of topology in quantum materials by spin-resolved spectroscopies
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Journal Articles

Morphologic and electronic changes induced by thermally supported hydrogen cleaning of GaAs(110) facets

D. S. Rosenzweig, M. Schnedler, R. E. Dunin-Borkowski, Ph. Ebert, H. Eisele
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 044202 (2023)
https://doi.org/10.1116/6.0002733
Published: May 2023
View article titled, Morphologic and electronic changes induced by thermally supported hydrogen cleaning of GaAs(110) facets
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Journal Articles

Electronic structure of InSb (001), (110), and (111)B surfaces

Jason T. Dong, Hadass S. Inbar, Mihir Pendharkar, Teun A. J. van Schijndel, Elliot C. Young, Connor P. Dempsey, Christopher J. Palmstrøm
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 032808 (2023)
https://doi.org/10.1116/6.0002606
Published: May 2023
View article titled, Electronic structure of InSb (001), (110), and (111)B surfaces
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Includes: Supplementary data
Journal Articles

Thickness dependent field emission study of LaB6 coated Si nanowire arrays

Amol Deore, Krishna Jagtap, Onkar Bhorade, Angela Vella, Mahendra More
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 022806 (2023)
https://doi.org/10.1116/6.0002464
Published: March 2023
View article titled, Thickness dependent field emission study of LaB<sub>6</sub> coated Si nanowire arrays
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Includes: Supplementary data
Journal Articles

Gap distance dependence on field emission at the nanogap between silicon cleavage surfaces

Yuki Akura, Masaki Shimofuri, Amit Banerjee, Jun Hirotani, Toshiyuki Tsuchiya
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 022805 (2023)
https://doi.org/10.1116/6.0002456
Published: March 2023
View article titled, Gap distance dependence on field emission at the nanogap between silicon cleavage surfaces
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Journal Articles

Temperature dependence of the infrared dielectric function and the direct bandgap of InSb from 80 to 725 K

Melissa Rivero Arias, Carlos A. Armenta, Carola Emminger, Cesy M. Zamarripa, Nuwanjula S. Samarasingha, Jaden R. Love, Sonam Yadav, Stefan Zollner
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 022203 (2023)
https://doi.org/10.1116/6.0002326
Published: February 2023
View article titled, Temperature dependence of the infrared dielectric function and the direct bandgap of InSb from 80 to 725 K
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Includes: Supplementary data
Journal Articles

Electron transport mechanisms in amorphous zinc oxysulfide thin films

Masato Tsuchii, Zhen Chen, Yasushi Hirose, Tetsuya Hasegawa
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 022201 (2023)
https://doi.org/10.1116/5.0104988
Published: January 2023
View article titled, Electron transport mechanisms in amorphous zinc oxysulfide thin films
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Includes: Supplementary data
Journal Articles

Implementation of high-performance and high-yield nanoscale hafnium zirconium oxide based ferroelectric tunnel junction devices on 300 mm wafer platform

Maximilian Liehr, Jubin Hazra, Karsten Beckmann, Vineetha Mukundan, Ioannis Alexandrou, Timothy Yeow, Joseph Race, Kandabara Tapily, Steven Consiglio, Santosh K. Kurinec, Alain C. Diebold, Nathaniel Cady
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 012805 (2023)
https://doi.org/10.1116/6.0002097
Published: January 2023
View article titled, Implementation of high-performance and high-yield nanoscale hafnium zirconium oxide based ferroelectric tunnel junction devices on 300 mm wafer platform
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Journal Articles

Fabrication, and Direct Current and cryogenic analysis of SF6-treated AlGaN/GaN Schottky barrier diodes

Quentin Fornasiero, Nicolas Defrance, Sylvie Lepilliet, Vanessa Avramovic, Yvon Cordier, Eric Frayssinet, Marie Lesecq, Nadir Idir, Jean-Claude De Jaeger
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 012202 (2023)
https://doi.org/10.1116/6.0002125
Published: December 2022
View article titled, Fabrication, and Direct Current and cryogenic analysis of SF<sub>6</sub>-treated AlGaN/GaN Schottky barrier diodes
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Journal Articles

System for interpolating work function for a cold-field emitter

A. Bahm
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 014201 (2023)
https://doi.org/10.1116/6.0002283
Published: December 2022
View article titled, System for interpolating work function for a cold-field emitter
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Journal Articles

High-temperature characteristics of GaN/InGaN multiple-quantum-well UV photodetectors fabricated on sapphire substrate: Analysis of photovoltaic and carrier transit time properties

Pradip Dalapati, Takashi Egawa, Makoto Miyoshi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 062210 (2022)
https://doi.org/10.1116/6.0002101
Published: November 2022
View article titled, High-temperature characteristics of GaN/InGaN multiple-quantum-well UV photodetectors fabricated on sapphire substrate: Analysis of photovoltaic and carrier transit time properties
Open the PDF for High-temperature characteristics of GaN/InGaN multiple-quantum-well UV photodetectors fabricated on sapphire substrate: Analysis of photovoltaic and carrier transit time properties in another window
Includes: Supplementary data
Journal Articles

Model for the current plateau observed on the (310) plane of a room temperature W field electron source

L. W. Swanson, G. A. Schwind, S. L. Vos
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 062804 (2022)
https://doi.org/10.1116/6.0002130
Published: November 2022
View article titled, Model for the current plateau observed on the (310) plane of a room temperature W field electron source
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Journal Articles

Low trap density of oxygen-rich HfO2/GaN interface for GaN MIS-HEMT applications

Wei-Chih Cheng, Jiaqi He, Minghao He, Zepeng Qiao, Yang Jiang, Fangzhou Du, Xiang Wang, Haimin Hong, Qing Wang, Hongyu Yu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 022212 (2022)
https://doi.org/10.1116/6.0001654
Published: March 2022
View article titled, Low trap density of oxygen-rich HfO<sub>2</sub>/GaN interface for GaN MIS-HEMT applications
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Journal Articles

Negative differential resistance in photoassisted field emission from Si nanowires

M. Choueib, A. Derouet, P. Vincent, A. Ayari, S. Perisanu, P. Poncharal, C. S. Cojocaru, R. Martel, S. T. Purcell
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 022802 (2022)
https://doi.org/10.1116/6.0001650
Published: February 2022
View article titled, Negative differential resistance in photoassisted field emission from Si nanowires
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Includes: Supplementary data