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Journal Articles

Two-dimensional electron gases in AlYN/GaN heterostructures grown by metal–organic chemical vapor deposition

Isabel Streicher, Patrik Straňák, Lutz Kirste, Mario Prescher, Stefan Müller, Stefano Leone
Journal: APL Materials
APL Mater. 12, 051109 (2024)
https://doi.org/10.1063/5.0203156
Published: May 2024
View article titled, Two-dimensional electron gases in AlYN/GaN heterostructures grown by metal–organic chemical vapor deposition
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Journal Articles

Boosting the photodetection of bulk aluminum nitride crystals-based MSM device through an additional electrode

Yuan Cao, Zelong Fan, Zuoyan Qin, Lei Jin, Baikui Li, Zhenhua Sun, Honglei Wu
Journal: APL Materials
APL Mater. 11, 101116 (2023)
https://doi.org/10.1063/5.0173327
Published: October 2023
View article titled, Boosting the photodetection of bulk aluminum nitride crystals-based MSM device through an additional electrode
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Includes: Supplementary data
Journal Articles

Electronic and optical properties of boron-containing GaN alloys: The role of boron atom clustering

Cara-Lena Nies, Thomas P. Sheerin, Stefan Schulz
Journal: APL Materials
APL Mater. 11, 091119 (2023)
https://doi.org/10.1063/5.0171932
Published: September 2023
View article titled, Electronic and optical properties of boron-containing GaN alloys: The role of boron atom clustering
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Includes: Supplementary data
Journal Articles

Indium as a surfactant: Effects on growth morphology and background impurity in GaN films grown by ammonia-assisted molecular beam epitaxy

Kai Shek Qwah, Esmat Farzana, Ashley Wissel, Morteza Monavarian, Tom Mates, James S. Speck
Journal: APL Materials
APL Mater. 10, 081107 (2022)
https://doi.org/10.1063/5.0098714
Published: August 2022
View article titled, Indium as a surfactant: Effects on growth morphology and background impurity in GaN films grown by ammonia-assisted molecular beam epitaxy
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Journal Articles

Composition dependent electrochemical properties of earth-abundant ternary nitride anodes

M. Brooks Tellekamp, Anna Osella, Karen N. Heinselman, Adele C. Tamboli, Chunmei Ban
Journal: APL Materials
APL Mater. 10, 041109 (2022)
https://doi.org/10.1063/5.0083998
Published: April 2022
View article titled, Composition dependent electrochemical properties of earth-abundant ternary nitride anodes
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Includes: Supplementary data
Journal Articles

High thermal conductivity and ultrahigh thermal boundary conductance of homoepitaxial AlN thin films

Editor’s Pick
Gustavo Alvarez-Escalante, Ryan Page, Renjiu Hu, Huili Grace Xing, Debdeep Jena, Zhiting Tian
Journal: APL Materials
APL Mater. 10, 011115 (2022)
https://doi.org/10.1063/5.0078155
Published: January 2022
View article titled, High thermal conductivity and ultrahigh thermal boundary conductance of homoepitaxial AlN thin films
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Includes: Supplementary data
Journal Articles

Observation of self-assembled InGaN/GaN superlattice structure grown on N-polar GaN by plasma-assisted molecular beam epitaxy

K. Khan, S. Diez, Kai Sun, C. Wurm, U. K. Mishra, E. Ahmadi
Journal: APL Materials
APL Mater. 9, 121114 (2021)
https://doi.org/10.1063/5.0063285
Published: December 2021
View article titled, Observation of self-assembled InGaN/GaN superlattice structure grown on N-polar GaN by plasma-assisted molecular beam epitaxy
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Journal Articles

Single photon generation from AlGaN exciton localization centers exhibiting narrow spectral linewidths

Munetaka Arita, Taichi Iki, Mark J. Holmes, Yasuhiko Arakawa
Journal: APL Materials
APL Mater. 9, 121106 (2021)
https://doi.org/10.1063/5.0076977
Published: December 2021
View article titled, Single photon generation from AlGaN exciton localization centers exhibiting narrow spectral linewidths
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Includes: Supplementary data
Journal Articles

A growth diagram for chemical beam epitaxy of GaP1−xNx alloys on nominally (001)-oriented GaP-on-Si substrates

Karim Ben Saddik, Basilio J. García, Sergio Fernández-Garrido
Journal: APL Materials
APL Mater. 9, 121101 (2021)
https://doi.org/10.1063/5.0067209
Published: December 2021
View article titled, A growth diagram for chemical beam epitaxy of GaP<sub>1−<em>x</em></sub>N<sub><em>x</em></sub> alloys on nominally (001)-oriented GaP-on-Si substrates
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Journal Articles

Strongly enhanced second-order optical nonlinearity in CMOS-compatible Al1−xScxN thin films

Valerie Yoshioka, Jian Lu, Zichen Tang, Jicheng Jin, Roy H. Olsson, III, Bo Zhen
Journal: APL Materials
APL Mater. 9, 101104 (2021)
https://doi.org/10.1063/5.0061787
Published: October 2021
View article titled, Strongly enhanced second-order optical nonlinearity in CMOS-compatible Al<sub>1−<em>x</em></sub>Sc<sub><em>x</em></sub>N thin films
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Includes: Supplementary data
Journal Articles

Fabrication of L1-FeNi films with island structures by nitrogen insertion and topotactic extraction for improved coercivity

Takahiro Nishio, Hiroaki Kura, Keita Ito, Koki Takanashi, Hideto Yanagihara
Journal: APL Materials
APL Mater. 9, 091108 (2021)
https://doi.org/10.1063/5.0062692
Published: September 2021
View article titled, Fabrication of L1<sub />-FeNi films with island structures by nitrogen insertion and topotactic extraction for improved coercivity
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Includes: Supplementary data
Journal Articles

Influence of the piezoelectric material on the signal and noise of magnetoelectric magnetic field sensors based on the delta-E effect

Benjamin Spetzler, Jingxiang Su, Ron-Marco Friedrich, Florian Niekiel, Simon Fichtner, Fabian Lofink, Franz Faupel
Journal: APL Materials
APL Mater. 9, 031108 (2021)
https://doi.org/10.1063/5.0042448
Published: March 2021
View article titled, Influence of the piezoelectric material on the signal and noise of magnetoelectric magnetic field sensors based on the delta-E effect
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Includes: Supplementary data
Journal Articles

Optoelectronic properties of ultrathin ALD silicon nitride and its potential as a hole-selective nanolayer for high efficiency solar cells

Edris Khorani, Shona McNab, Tudor E. Scheul, Tasmiat Rahman, Ruy S. Bonilla, Stuart A. Boden, Peter R. Wilshaw
Journal: APL Materials
APL Mater. 8, 111106 (2020)
https://doi.org/10.1063/5.0023336
Published: November 2020
View article titled, Optoelectronic properties of ultrathin ALD silicon nitride and its potential as a hole-selective nanolayer for high efficiency solar cells
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Includes: Supplementary data
Journal Articles

Cathodoluminescence of silicon doped aluminum nitride with scanning transmission electron microscopy

Matthew R. Hauwiller, David Stowe, Timothy B. Eldred, Seiji Mita, Ramon Collazo, Zlatko Sitar, James LeBeau
Journal: APL Materials
APL Mater. 8, 091110 (2020)
https://doi.org/10.1063/5.0019863
Published: September 2020
View article titled, Cathodoluminescence of silicon doped aluminum nitride with scanning transmission electron microscopy
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Journal Articles

A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition

Tai Nguyen, Noureddine Adjeroud, Sebastjan Glinsek, Yves Fleming, Jérôme Guillot, Patrick Grysan, Jérôme Polesel-Maris
Journal: APL Materials
APL Mater. 8, 071101 (2020)
https://doi.org/10.1063/5.0011331
Published: July 2020
View article titled, A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
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Includes: Supplementary data
Journal Articles

Strain-tunable III-nitride/ZnO heterostructures for photocatalytic water-splitting: A hybrid functional calculation

Zhaofu Zhang, Bingquan Huang, Qingkai Qian, Zhibin Gao, Xi Tang, Baikui Li
Journal: APL Materials
APL Mater. 8, 041114 (2020)
https://doi.org/10.1063/5.0005648
Published: April 2020
View article titled, Strain-tunable III-nitride/ZnO heterostructures for photocatalytic water-splitting: A hybrid functional calculation
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Journal Articles

Band structure, effective mass, and carrier mobility of few-layer h-AlN under layer and strain engineering

Yao Cai, Yan Liu, Ying Xie, Yang Zou, Chao Gao, Yan Zhao, Sheng Liu, Hongxing Xu, Jian Shi, Shishang Guo, Chengliang Sun
Journal: APL Materials
APL Mater. 8, 021107 (2020)
https://doi.org/10.1063/1.5139664
Published: February 2020
View article titled, Band structure, effective mass, and carrier mobility of few-layer <em>h</em>-AlN under layer and strain engineering
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Includes: Supplementary data
Journal Articles

Impact of growth conditions and strain on indium incorporation in non-polar m-plane ( 10 1 ¯ ) InGaN grown by plasma-assisted molecular beam epitaxy

Alexander Senichev, Brandon Dzuba, Trang Nguyen, Yang Cao, Michael A. Capano, Michael J. Manfra, Oana Malis
Journal: APL Materials
APL Mater. 7, 121109 (2019)
https://doi.org/10.1063/1.5121445
Published: December 2019
View article titled, Impact of growth conditions and strain on indium incorporation in non-polar m-plane ( 10 1 ¯ ) InGaN grown by plasma-assisted molecular beam epitaxy
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Includes: Supplementary data
Journal Articles

Rhenium dinitride: Carrier transport in a novel transition metal dinitride layered crystal

Editor’s Pick
Momoko Onodera, Fumio Kawamura, Nguyen Thanh Cuong, Kenji Watanabe, Rai Moriya, Satoru Masubuchi, Takashi Taniguchi, Susumu Okada, Tomoki Machida
Journal: APL Materials
APL Mater. 7, 101103 (2019)
https://doi.org/10.1063/1.5118713
Published: October 2019
View article titled, Rhenium dinitride: Carrier transport in a novel transition metal dinitride layered crystal
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Includes: Supplementary data
Journal Articles

Tetragonal Mn3Sn Heusler films with large perpendicular magnetic anisotropy deposited on metallic MnN underlayers using amorphous substrates

Yari Ferrante, Jaewoo Jeong, Rana Saha, Sergey V. Faleev, Mahesh G. Samant, Teya Topuria, Hakan Deniz, Stuart S. P. Parkin
Journal: APL Materials
APL Mater. 7, 031103 (2019)
https://doi.org/10.1063/1.5066594
Published: March 2019
View article titled, Tetragonal Mn<sub>3</sub>Sn Heusler films with large perpendicular magnetic anisotropy deposited on metallic MnN underlayers using amorphous substrates
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Includes: Supplementary data