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Journal Articles

Resistive switching behaviors and conduction mechanisms of IGZO/ZnO bilayer heterostructure memristors

Xiongfeng Wang, Zhenyi Guo, Weiying Zheng, Zhiquan Liu, Tengzhang Liu, Xiaopei Chen, Peimian Cai, Qiyan Zhang, Wugang Liao

APL Mater. 12, 111105 (2024)

https://doi.org/10.1063/5.0237063

Published: November 2024

View article titled, Resistive switching behaviors and conduction mechanisms of IGZO/ZnO bilayer heterostructure memristors

Journal Articles

Effect of neural firing pattern on NbO_x/Al₂O₃ memristor-based reservoir computing system

Dongyeol Ju, Hyeonseung Ji, Jungwoo Lee, Sungjun Kim

APL Mater. 12, 071121 (2024)

https://doi.org/10.1063/5.0211178

Published: July 2024

View article titled, Effect of neural firing pattern on NbOx/Al2O3 memristor-based reservoir computing system

Includes: Supplementary data

Journal Articles

Electric field enhancement of the superconducting spin-valve effect via strain-transfer across a ferromagnetic/ferroelectric interface

Tomohiro Kikuta, Sachio Komori, Keiichiro Imura, Tomoyasu Taniyama

APL Mater. 12, 071115 (2024)

https://doi.org/10.1063/5.0211769

Published: July 2024

View article titled, Electric field enhancement of the superconducting spin-valve effect via strain-transfer across a ferromagnetic/ferroelectric interface

Includes: Supplementary data

Journal Articles

Accurate evaluation method for HRS retention of VCM ReRAM

N. Kopperberg, D. J. Wouters, R. Waser, S. Menzel, S. Wiefels

APL Mater. 12, 031112 (2024)

https://doi.org/10.1063/5.0188573

Published: March 2024

View article titled, Accurate evaluation method for HRS retention of VCM ReRAM

Journal Articles

Noise-assisted transport mechanism analysis and synaptic characteristics in ZrO_X/HfAlO_X-based memristor for neuromorphic systems

Jungang Heo, Youngboo Cho, Hyeonseung Ji, Min-Hwi Kim, Jong-Ho Lee, Jung-Kyu Lee, Sungjun Kim

APL Mater. 11, 111103 (2023)

https://doi.org/10.1063/5.0175587

Published: November 2023

View article titled, Noise-assisted transport mechanism analysis and synaptic characteristics in ZrOX/HfAlOX-based memristor for neuromorphic systems

Includes: Supplementary data

Journal Articles

Structure evolution of the interfacial layer of BaTiO₃ thin films during annealing process and related good resistive switching behaviors

Zixiong Sun (孙梓雄), Sizhao Huang, Wenxuan Zhu, Yorick A. Birkhölzer, Xing Gao (兴), Romar Angelo Avila, Houbing Huang, Xiaojie Lou, Evert P. Houwman, Minh D. Nguyen, Gertjan Koster, Guus Rijnders

APL Mater. 11, 101129 (2023)

https://doi.org/10.1063/5.0170098

Published: October 2023

View article titled, Structure evolution of the interfacial layer of BaTiO3 thin films during annealing process and related good resistive switching behaviors

Includes: Supplementary data

Journal Articles

Artificial synaptic characteristics of PVA:ZnO nanocomposite memristive devices

Renu Kumari, Jnaneswari Gellanki, Somnath S. Kundale, Ruhan E. Ustad, Tukaram D. Dongale, Ying Fu, Håkan Pettersson, Sandeep Kumar

APL Mater. 11, 101124 (2023)

https://doi.org/10.1063/5.0165205

Published: October 2023

View article titled, Artificial synaptic characteristics of PVA:ZnO nanocomposite memristive devices

Journal Articles

Low-temperature enhanced OFF-state telegraph noise in defect engineered ReRAMs

H. S. Alagoz, M. Egilmez, J. Jung, K. H. Chow

APL Mater. 11, 101115 (2023)

https://doi.org/10.1063/5.0169682

Published: October 2023

View article titled, Low-temperature enhanced OFF-state telegraph noise in defect engineered ReRAMs

Journal Articles

Memristive artificial synapses based on Au–TiO₂ composite thin film for neuromorphic computing

Haonan Zhu, Zhenxun Tang, Guoliang Wang, Yuan Fang, Jijie Huang, Yue Zheng

APL Mater. 11, 061103 (2023)

https://doi.org/10.1063/5.0149154

Published: June 2023

View article titled, Memristive artificial synapses based on Au–TiO2 composite thin film for neuromorphic computing

Includes: Supplementary data

Journal Articles

Artificial synapse based on carbon quantum dots dispersed in indigo molecular layer for neuromorphic applications

Amrita Bharati Mishra, R. Thamankar

APL Mater. 11, 041122 (2023)

https://doi.org/10.1063/5.0143219

Published: April 2023

View article titled, Artificial synapse based on carbon quantum dots dispersed in indigo molecular layer for neuromorphic applications

Includes: Supplementary data

Journal Articles

Material challenges for nonvolatile memory

Bhagwati Prasad, Stuart Parkin, Themis Prodromakis, Chang-Beom Eom, Jordi Sort, J. L. MacManus-Driscoll

APL Mater. 10, 090401 (2022)

https://doi.org/10.1063/5.0111671

Published: September 2022

View article titled, Material challenges for nonvolatile memory

Journal Articles

Improvement of forming-free threshold switching reliability of CeO₂-based selector device by controlling volatile filament formation behaviors

Dwipak Prasad Sahu, Kitae Park, Jimin Han, Tae-Sik Yoon

APL Mater. 10, 051111 (2022)

https://doi.org/10.1063/5.0090425

Published: May 2022

View article titled, Improvement of forming-free threshold switching reliability of CeO2-based selector device by controlling volatile filament formation behaviors

Includes: Supplementary data

Journal Articles

Resistive switching properties for fluorine doped titania fabricated using atomic layer deposition

Minjae Kim, Yue Wang, Dong-eun Kim, Qingyi Shao, Hong-Sub Lee, Hyung-Ho Park

APL Mater. 10, 031105 (2022)

https://doi.org/10.1063/5.0076669

Published: March 2022

View article titled, Resistive switching properties for fluorine doped titania fabricated using atomic layer deposition

Includes: Supplementary data

Journal Articles

Formation of a ternary oxide barrier layer and its role in switching characteristic of ZnO-based conductive bridge random access memory devices

Firman Mangasa Simanjuntak, Julianna Panidi, Fayzah Talbi, Adam Kerrigan, Vlado K. Lazarov, Themistoklis Prodromakis

APL Mater. 10, 031103 (2022)

https://doi.org/10.1063/5.0076903

Published: March 2022

View article titled, Formation of a ternary oxide barrier layer and its role in switching characteristic of ZnO-based conductive bridge random access memory devices

Journal Articles

Tailoring the synaptic properties of a-IGZO memristors for artificial deep neural networks

Maria Elias Pereira, Jonas Deuermeier, Pedro Freitas, Pedro Barquinha, Weidong Zhang, Rodrigo Martins, Elvira Fortunato, Asal Kiazadeh

APL Mater. 10, 011113 (2022)

https://doi.org/10.1063/5.0073056

Published: January 2022

View article titled, Tailoring the synaptic properties of a-IGZO memristors for artificial deep neural networks

Includes: Supplementary data

Journal Articles

Amorphous Hf–O–Te as a selector via a modified conduction mechanism by Te content control

Shogo Hatayama, Yuta Saito, Noriyuki Uchida

APL Mater. 10, 011106 (2022)

https://doi.org/10.1063/5.0076942

Published: January 2022

View article titled, Amorphous Hf–O–Te as a selector via a modified conduction mechanism by Te content control

Includes: Supplementary data

Journal Articles

Polymerized hybrid Hf-based hydroquinone/Al₂O₃ bilayer structure by molecular/atomic layer deposition for non-volatile resistive random access memory

Jin Lei, Wen-Juan Ding, Chang Liu, Di Wu, Wei-Min Li, Ai-Dong Li

APL Mater. 9, 121110 (2021)

https://doi.org/10.1063/5.0073341

Published: December 2021

View article titled, Polymerized hybrid Hf-based hydroquinone/Al2O3 bilayer structure by molecular/atomic layer deposition for non-volatile resistive random access memory

Journal Articles

The nature of column boundaries in micro-structured silicon oxide nanolayers

K. Patel, J. Cottom, A. Mehonic, W. H. Ng, A. J. Kenyon, M. Bosman, A. L. Shluger

APL Mater. 9, 121107 (2021)

https://doi.org/10.1063/5.0073349

Published: December 2021

View article titled, The nature of column boundaries in micro-structured silicon oxide nanolayers

Journal Articles

Conduction channel configuration controlled digital and analog response in TiO₂-based inorganic memristive artificial synapses

Firman Mangasa Simanjuntak, Chun-Ling Hsu, Thomas Abbey, Lung-Yu Chang, Sailesh Rajasekaran, Themis Prodromakis, Tseung-Yuen Tseng

APL Mater. 9, 121103 (2021)

https://doi.org/10.1063/5.0067302

Published: December 2021

View article titled, Conduction channel configuration controlled digital and analog response in TiO2-based inorganic memristive artificial synapses

Journal Articles

A nanoscale analysis method to reveal oxygen exchange between environment, oxide, and electrodes in ReRAM devices

Horatio R. J. Cox, Mark Buckwell, Wing H. Ng, Daniel J. Mannion, Adnan Mehonic, Paul R. Shearing, Sarah Fearn, Anthony J. Kenyon

APL Mater. 9, 111109 (2021)

https://doi.org/10.1063/5.0070046

Published: November 2021

View article titled, A nanoscale analysis method to reveal oxygen exchange between environment, oxide, and electrodes in ReRAM devices

NARROW

Topics

Resistive switching behaviors and conduction mechanisms of IGZO/ZnO bilayer heterostructure memristors

Effect of neural firing pattern on NbO_x/Al₂O₃ memristor-based reservoir computing system

Electric field enhancement of the superconducting spin-valve effect via strain-transfer across a ferromagnetic/ferroelectric interface

Accurate evaluation method for HRS retention of VCM ReRAM

Noise-assisted transport mechanism analysis and synaptic characteristics in ZrO_X/HfAlO_X-based memristor for neuromorphic systems

Structure evolution of the interfacial layer of BaTiO₃ thin films during annealing process and related good resistive switching behaviors

Artificial synaptic characteristics of PVA:ZnO nanocomposite memristive devices

Low-temperature enhanced OFF-state telegraph noise in defect engineered ReRAMs

Memristive artificial synapses based on Au–TiO₂ composite thin film for neuromorphic computing

Artificial synapse based on carbon quantum dots dispersed in indigo molecular layer for neuromorphic applications

Material challenges for nonvolatile memory

Improvement of forming-free threshold switching reliability of CeO₂-based selector device by controlling volatile filament formation behaviors

Resistive switching properties for fluorine doped titania fabricated using atomic layer deposition

Formation of a ternary oxide barrier layer and its role in switching characteristic of ZnO-based conductive bridge random access memory devices

Tailoring the synaptic properties of a-IGZO memristors for artificial deep neural networks

Amorphous Hf–O–Te as a selector via a modified conduction mechanism by Te content control

Polymerized hybrid Hf-based hydroquinone/Al₂O₃ bilayer structure by molecular/atomic layer deposition for non-volatile resistive random access memory

The nature of column boundaries in micro-structured silicon oxide nanolayers

Conduction channel configuration controlled digital and analog response in TiO₂-based inorganic memristive artificial synapses

A nanoscale analysis method to reveal oxygen exchange between environment, oxide, and electrodes in ReRAM devices

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