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Journal Articles

Density dependent local structures in InTe phase-change materials

Suyang Sun, Bo Zhang, Xudong Wang, Wei Zhang
Journal: APL Materials
APL Mater. 9, 121105 (2021)
https://doi.org/10.1063/5.0073400
Published: December 2021
View article titled, Density dependent local structures in InTe phase-change materials
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Includes: Supplementary data
Journal Articles

Size effect of the Ge2Sb2Te5 cell atop the silicon nitride O-ring resonator on the attenuation coefficient

Petr Lazarenko, Vadim Kovalyuk, Pavel An, Aleksey Prokhodtsov, Alexander Golikov, Aleksey Sherchenkov, Sergey Kozyukhin, Ilia Fradkin, Galina Chulkova, Gregory Goltsman
Journal: APL Materials
APL Mater. 9, 121104 (2021)
https://doi.org/10.1063/5.0066387
Published: December 2021
View article titled, Size effect of the Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> cell atop the silicon nitride O-ring resonator on the attenuation coefficient
Open the PDF for Size effect of the Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> cell atop the silicon nitride O-ring resonator on the attenuation coefficient in another window
Includes: Supplementary data
Journal Articles

Phase change of Ge2Sb2Te5 under terahertz laser illumination

Kang Zhou, Junyi Nan, Jiabin Shen, Ziping Li, J. C. Cao, Zhitang Song, Min Zhu, Boqu He, Ming Yan, Heping Zeng, Hua Li
Journal: APL Materials
APL Mater. 9, 101113 (2021)
https://doi.org/10.1063/5.0070304
Published: October 2021
View article titled, Phase change of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> under terahertz laser illumination
Open the PDF for Phase change of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> under terahertz laser illumination in another window
Includes: Supplementary data
Journal Articles

A fast, low-energy multi-state phase-change artificial synapse based on uniform partial-state transitions

Shao Xiang Go, Tae Hoon Lee, Stephen R. Elliott, Natasa Bajalovic, Desmond K. Loke
Journal: APL Materials
APL Mater. 9, 091103 (2021)
https://doi.org/10.1063/5.0056656
Published: September 2021
View article titled, A fast, low-energy multi-state phase-change artificial synapse based on uniform partial-state transitions
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Includes: Supplementary data
Journal Articles

Structural features of chalcogenide glass SiTe: An ovonic threshold switching material

Rongchuan Gu, Meng Xu, Run Yu, Chong Qiao, Cai-Zhuang Wang, Kai-Ming Ho, Songyou Wang, Xiangshui Miao, Ming Xu
Journal: APL Materials
APL Mater. 9, 081101 (2021)
https://doi.org/10.1063/5.0059845
Published: August 2021
View article titled, Structural features of chalcogenide glass SiTe: An ovonic threshold switching material
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Includes: Supplementary data
Journal Articles

Progressive amorphization of GeSbTe phase-change material under electron beam irradiation

Ting-Ting Jiang, Jiang-Jing Wang, Lu Lu, Chuan-Sheng Ma, Dan-Li Zhang, Feng Rao, Chun-Lin Jia, Wei Zhang
Journal: APL Materials
APL Mater. 7, 081121 (2019)
https://doi.org/10.1063/1.5102075
Published: August 2019
View article titled, Progressive amorphization of GeSbTe phase-change material under electron beam irradiation
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