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Journal Articles

Resistive switching behaviors and conduction mechanisms of IGZO/ZnO bilayer heterostructure memristors

Xiongfeng Wang, Zhenyi Guo, Weiying Zheng, Zhiquan Liu, Tengzhang Liu, Xiaopei Chen, Peimian Cai, Qiyan Zhang, Wugang Liao

APL Mater. 12, 111105 (2024)

https://doi.org/10.1063/5.0237063

Published: November 2024

View article titled, Resistive switching behaviors and conduction mechanisms of IGZO/ZnO bilayer heterostructure memristors

Journal Articles

Controllable arrangement of magnetic skyrmions by strain regulation

Yunhong Zhao, Lan Shang, Shengbin Shi, Jiajun Sun, Jie Wang

APL Mater. 12, 021103 (2024)

https://doi.org/10.1063/5.0188828

Published: February 2024

View article titled, Controllable arrangement of magnetic skyrmions by strain regulation

Journal Articles

Coupling effects of interface charge trapping and polarization switching in HfO₂-based ferroelectric field effect transistors

Tianqi Hao, Binjian Zeng, Zhijie Sun, Zhenguo Wang, Yongquan Jiang, Qiangxiang Peng, Shuaizhi Zheng, Yichun Zhou, Min Liao

APL Mater. 12, 011108 (2024)

https://doi.org/10.1063/5.0184042

Published: January 2024

View article titled, Coupling effects of interface charge trapping and polarization switching in HfO2-based ferroelectric field effect transistors

Includes: Supplementary data

Journal Articles

Neuromorphic synaptic applications of HfAlO_x-based ferroelectric tunnel junction annealed at high temperatures to achieve high polarization

Sunghun Kim, Juri Kim, Dahye Kim, Jihyung Kim, Sungjun Kim

APL Mater. 11, 101102 (2023)

https://doi.org/10.1063/5.0170699

Published: October 2023

View article titled, Neuromorphic synaptic applications of HfAlOx-based ferroelectric tunnel junction annealed at high temperatures to achieve high polarization

Includes: Supplementary data

Journal Articles

Ultrafast response of Ge₂Sb₂Te₅ nanoparticles: The benefits of low energy amorphization switching with the same read/write speed of bulk memories

Antonio Caretta, Barbara Casarin, Bin Chen, Bart J. Kooi, Marco Malvestuto

APL Mater. 11, 071117 (2023)

https://doi.org/10.1063/5.0156207

Published: July 2023

View article titled, Ultrafast response of Ge2Sb2Te5 nanoparticles: The benefits of low energy amorphization switching with the same read/write speed of bulk memories

Journal Articles

Material challenges for nonvolatile memory

Bhagwati Prasad, Stuart Parkin, Themis Prodromakis, Chang-Beom Eom, Jordi Sort, J. L. MacManus-Driscoll

APL Mater. 10, 090401 (2022)

https://doi.org/10.1063/5.0111671

Published: September 2022

View article titled, Material challenges for nonvolatile memory

Journal Articles

Improvement of forming-free threshold switching reliability of CeO₂-based selector device by controlling volatile filament formation behaviors

Dwipak Prasad Sahu, Kitae Park, Jimin Han, Tae-Sik Yoon

APL Mater. 10, 051111 (2022)

https://doi.org/10.1063/5.0090425

Published: May 2022

View article titled, Improvement of forming-free threshold switching reliability of CeO2-based selector device by controlling volatile filament formation behaviors

Includes: Supplementary data

Journal Articles

Resistive switching properties for fluorine doped titania fabricated using atomic layer deposition

Minjae Kim, Yue Wang, Dong-eun Kim, Qingyi Shao, Hong-Sub Lee, Hyung-Ho Park

APL Mater. 10, 031105 (2022)

https://doi.org/10.1063/5.0076669

Published: March 2022

View article titled, Resistive switching properties for fluorine doped titania fabricated using atomic layer deposition

Includes: Supplementary data

Journal Articles

Polymerized hybrid Hf-based hydroquinone/Al₂O₃ bilayer structure by molecular/atomic layer deposition for non-volatile resistive random access memory

Jin Lei, Wen-Juan Ding, Chang Liu, Di Wu, Wei-Min Li, Ai-Dong Li

APL Mater. 9, 121110 (2021)

https://doi.org/10.1063/5.0073341

Published: December 2021

View article titled, Polymerized hybrid Hf-based hydroquinone/Al2O3 bilayer structure by molecular/atomic layer deposition for non-volatile resistive random access memory

Journal Articles

Density dependent local structures in InTe phase-change materials

Suyang Sun, Bo Zhang, Xudong Wang, Wei Zhang

APL Mater. 9, 121105 (2021)

https://doi.org/10.1063/5.0073400

Published: December 2021

View article titled, Density dependent local structures in InTe phase-change materials

Includes: Supplementary data

Journal Articles

Size effect of the Ge₂Sb₂Te₅ cell atop the silicon nitride O-ring resonator on the attenuation coefficient

Petr Lazarenko, Vadim Kovalyuk, Pavel An, Aleksey Prokhodtsov, Alexander Golikov, Aleksey Sherchenkov, Sergey Kozyukhin, Ilia Fradkin, Galina Chulkova, Gregory Goltsman

APL Mater. 9, 121104 (2021)

https://doi.org/10.1063/5.0066387

Published: December 2021

View article titled, Size effect of the Ge2Sb2Te5 cell atop the silicon nitride O-ring resonator on the attenuation coefficient

Includes: Supplementary data

Journal Articles

A nanoscale analysis method to reveal oxygen exchange between environment, oxide, and electrodes in ReRAM devices

Horatio R. J. Cox, Mark Buckwell, Wing H. Ng, Daniel J. Mannion, Adnan Mehonic, Paul R. Shearing, Sarah Fearn, Anthony J. Kenyon

APL Mater. 9, 111109 (2021)

https://doi.org/10.1063/5.0070046

Published: November 2021

View article titled, A nanoscale analysis method to reveal oxygen exchange between environment, oxide, and electrodes in ReRAM devices

Journal Articles

Phase change of Ge₂Sb₂Te₅ under terahertz laser illumination

Kang Zhou, Junyi Nan, Jiabin Shen, Ziping Li, J. C. Cao, Zhitang Song, Min Zhu, Boqu He, Ming Yan, Heping Zeng, Hua Li

APL Mater. 9, 101113 (2021)

https://doi.org/10.1063/5.0070304

Published: October 2021

View article titled, Phase change of Ge2Sb2Te5 under terahertz laser illumination

Includes: Supplementary data

Journal Articles

A fast, low-energy multi-state phase-change artificial synapse based on uniform partial-state transitions

Shao Xiang Go, Tae Hoon Lee, Stephen R. Elliott, Natasa Bajalovic, Desmond K. Loke

APL Mater. 9, 091103 (2021)

https://doi.org/10.1063/5.0056656

Published: September 2021

View article titled, A fast, low-energy multi-state phase-change artificial synapse based on uniform partial-state transitions

Includes: Supplementary data

Journal Articles

Direct observation of topological charge impacting skyrmion bubble stability in Pt/Ni/Co asymmetric superlattices

Nisrit Pandey, Maxwell Li, Marc De Graef, Vincent Sokalski

APL Mater. 9, 081114 (2021)

https://doi.org/10.1063/5.0055971

Published: August 2021

View article titled, Direct observation of topological charge impacting skyrmion bubble stability in Pt/Ni/Co asymmetric superlattices

Journal Articles

Structural features of chalcogenide glass SiTe: An ovonic threshold switching material

Rongchuan Gu, Meng Xu, Run Yu, Chong Qiao, Cai-Zhuang Wang, Kai-Ming Ho, Songyou Wang, Xiangshui Miao, Ming Xu

APL Mater. 9, 081101 (2021)

https://doi.org/10.1063/5.0059845

Published: August 2021

View article titled, Structural features of chalcogenide glass SiTe: An ovonic threshold switching material

Includes: Supplementary data

Journal Articles

Trade-off between variability and retention of memristive epitaxial SrTiO₃ devices

Jan L. Rieck, Felix V. E. Hensling, Regina Dittmann

APL Mater. 9, 021110 (2021)

https://doi.org/10.1063/5.0035707

Published: February 2021

View article titled, Trade-off between variability and retention of memristive epitaxial SrTiO3 devices

Journal Articles

Ferroelectric field effect transistors: Progress and perspective

Jae Young Kim, Min-Ju Choi, Ho Won Jang

APL Mater. 9, 021102 (2021)

https://doi.org/10.1063/5.0035515

Published: February 2021

View article titled, Ferroelectric field effect transistors: Progress and perspective

Journal Articles

Photoemission electron microscopy of magneto-ionic effects in La_0.7Sr_0.3MnO₃

Marek Wilhelm, Margret Giesen, Tomáš Duchoň, Marco Moors, David N. Mueller, Johanna Hackl, Christoph Baeumer, Mai Hussein Hamed, Lei Cao, Hengbo Zhang, Oleg Petracic, Maria Glöß, Stefan Cramm, Slavomír Nemšák, Carsten Wiemann, Regina Dittmann, Claus M. Schneider, Martina Müller

APL Mater. 8, 111102 (2020)

https://doi.org/10.1063/5.0022150

Published: November 2020

View article titled, Photoemission electron microscopy of magneto-ionic effects in La0.7Sr0.3MnO3

Includes: Supplementary data

Journal Articles

Analyses of a 1-layer neuromorphic network using memristive devices with non-continuous resistance levels

A. Siemon, S. Ferch, A. Heittmann, R. Waser, D. J. Wouters, S. Menzel

APL Mater. 7, 091110 (2019)

https://doi.org/10.1063/1.5108658

Published: September 2019

View article titled, Analyses of a 1-layer neuromorphic network using memristive devices with non-continuous resistance levels

Includes: Supplementary data

NARROW

Topics

Resistive switching behaviors and conduction mechanisms of IGZO/ZnO bilayer heterostructure memristors

Controllable arrangement of magnetic skyrmions by strain regulation

Coupling effects of interface charge trapping and polarization switching in HfO₂-based ferroelectric field effect transistors

Neuromorphic synaptic applications of HfAlO_x-based ferroelectric tunnel junction annealed at high temperatures to achieve high polarization

Ultrafast response of Ge₂Sb₂Te₅ nanoparticles: The benefits of low energy amorphization switching with the same read/write speed of bulk memories

Material challenges for nonvolatile memory

Improvement of forming-free threshold switching reliability of CeO₂-based selector device by controlling volatile filament formation behaviors

Resistive switching properties for fluorine doped titania fabricated using atomic layer deposition

Polymerized hybrid Hf-based hydroquinone/Al₂O₃ bilayer structure by molecular/atomic layer deposition for non-volatile resistive random access memory

Density dependent local structures in InTe phase-change materials

Size effect of the Ge₂Sb₂Te₅ cell atop the silicon nitride O-ring resonator on the attenuation coefficient

A nanoscale analysis method to reveal oxygen exchange between environment, oxide, and electrodes in ReRAM devices

Phase change of Ge₂Sb₂Te₅ under terahertz laser illumination

A fast, low-energy multi-state phase-change artificial synapse based on uniform partial-state transitions

Direct observation of topological charge impacting skyrmion bubble stability in Pt/Ni/Co asymmetric superlattices

Structural features of chalcogenide glass SiTe: An ovonic threshold switching material

Trade-off between variability and retention of memristive epitaxial SrTiO₃ devices

Ferroelectric field effect transistors: Progress and perspective

Photoemission electron microscopy of magneto-ionic effects in La_0.7Sr_0.3MnO₃

Analyses of a 1-layer neuromorphic network using memristive devices with non-continuous resistance levels

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