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Wide Bandgap Oxides
This special issue explores emerging wide bandgap oxide materials spanning fundamental atomistic modelling to device-relevant epitaxial films. It focuses on materials challenges that improve the understanding of oxide structures and properties enabling power electronic, RF, and optical applications among others. The selected articles provide a perspective on the current status of wide bandgap oxide material synthesis and characterization and identify key developments in this rapidly accelerating field.
Guest Editors: Kevin D. Leedy, Kookrin Char, Masataka Higashiwaki, Rebecca L. Peterson and James S. Speck

ARTICLES
Si and Sn doping of ε-Ga2O3 layers
Open Access
A. Parisini; A. Bosio; V. Montedoro; A. Gorreri; A. Lamperti; M. Bosi; G. Garulli; S. Vantaggio; R. Fornari
Preface
Wide bandgap oxides
Free
Kevin D. Leedy; Kookrin Char; Masataka Higashiwaki; Rebecca L. Peterson; James S. Speck
Articles
J. E. N. Swallow; J. B. Varley; L. A. H. Jones; J. T. Gibbon; L. F. J. Piper; V. R. Dhanak; T. D. Veal
Articles
Johannes Boy; Martin Handwerg; Robin Ahrling; Rüdiger Mitdank; Günter Wagner; Zbigniew Galazka; Saskia F. Fischer
Articles
Fikadu Alema; Brian Hertog; Partha Mukhopadhyay; Yuewei Zhang; Akhil Mauze; Andrei Osinsky; Winston V. Schoenfeld; James S. Speck; Timothy Vogt
Articles
Structural, optical, and electrical properties of orthorhombic κ -(InxGa1−x)2O3 thin films
Open Access
A. Hassa; H. von Wenckstern; D. Splith; C. Sturm; M. Kneiß; V. Prozheeva; M. Grundmann
Articles
Ming-Hsun Lee; Rebecca L. Peterson
Articles
Xu-Qian Zheng; Yong Xie; Jaesung Lee; Zhitai Jia; Xutang Tao; Philip X.-L. Feng
Articles
The electronic structure of ε-Ga2O3
Open Access
M. Mulazzi; F. Reichmann; A. Becker; W. M. Klesse; P. Alippi; V. Fiorentini; A. Parisini; M. Bosi; R. Fornari
Articles
Hans Jürgen von Bardeleben; Shengqiang Zhou; Uwe Gerstmann; Dmitry Skachkov; Walter R. L. Lambrecht; Quoc Duy Ho; Peter Deák
Articles
Zhe Wang; Hanjong Paik; Zhen Chen; David A. Muller; Darrell G. Schlom
Articles
Deep acceptors and their diffusion in Ga2O3
Open Access
Hartwin Peelaers; John L. Lyons; Joel B. Varley; Chris G. Van de Walle
Articles
Michael E. Liao; Chao Li; Hsuan Ming Yu; Eva Rosker; Marko J. Tadjer; Karl D. Hobart; Mark S. Goorsky
Articles
M. F. Lynam; N.-J. Ke; S. J. Bradley; T. Nann; A. Neiman; R. J. Reeves; A. J. Downard; V. B. Golovko; M. W. Allen
Perspectives
S. S. Shin; S. J. Lee; S. I. Seok
Articles
Step-flow growth in homoepitaxy of β -Ga2O3 (100)—The influence of the miscut direction and faceting
Open Access
R. Schewski; K. Lion; A. Fiedler; C. Wouters; A. Popp; S. V. Levchenko; T. Schulz; M. Schmidbauer; S. Bin Anooz; R. Grüneberg; Z. Galazka; G. Wagner; K. Irmscher; M. Scheffler; C. Draxl; M. Albrecht
Articles
Tin-assisted heteroepitaxial PLD-growth of κ -Ga2O3 thin films with high crystalline quality
Open Access
M. Kneiß; A. Hassa; D. Splith; C. Sturm; H. von Wenckstern; T. Schultz; N. Koch; M. Lorenz; M. Grundmann
Articles
Nadeemullah A. Mahadik; Marko J. Tadjer; Peter L. Bonanno; Karl D. Hobart; Robert E. Stahlbush; Travis J. Anderson; Akito Kuramata
Articles
Low pressure chemical vapor deposition of β -Ga2O3 thin films: Dependence on growth parameters
Open Access
Zixuan Feng; Md Rezaul Karim; Hongping Zhao
Articles
Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals
Open Access
Zbigniew Galazka; Steffen Ganschow; Robert Schewski; Klaus Irmscher; Detlef Klimm; Albert Kwasniewski; Mike Pietsch; Andreas Fiedler; Isabelle Schulze-Jonack; Martin Albrecht; Thomas Schröder; Matthias Bickermann