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Journal Articles

Vertical Al2O3/GaN MOS capacitors with PEALD-GaOx interlayer passivation

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Renqiang Zhu, Jinpei Lin, Hong Gu, Lixuan Chen, Bo Zhang, Hezhou Liu, Xinke Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 081603 (2025)
https://doi.org/10.1063/5.0245266
Published: February 2025
View article titled, Vertical Al2O3/GaN MOS capacitors with PEALD-GaOx interlayer passivation
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Journal Articles

MOS-structured MoS2/GaN Schottky barrier diodes with high on/off current ratio and low threshold voltage

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Runjie Zhou, Wenliang Wang, Guoqiang Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 122103 (2024)
https://doi.org/10.1063/5.0231505
Published: September 2024
View article titled, MOS-structured MoS2/GaN Schottky barrier diodes with high on/off current ratio and low threshold voltage
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Journal Articles

Spin-dependent capture mechanism for magnetic field effects on interface recombination current in semiconductor devices

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Nicholas J. Harmon, James P. Ashton, Patrick M. Lenahan, Michael E. Flatté
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 251603 (2023)
https://doi.org/10.1063/5.0172275
Published: December 2023
View article titled, Spin-dependent capture mechanism for magnetic field effects on interface recombination current in semiconductor devices
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Includes: Supplementary data
Journal Articles

Violet phosphorus nanosheets for room-temperature dimethylamine detection and mechanism insights by DFT calculation

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Yinhua Hu, Xiao Chang, Jun Zhang, Xianghong Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 121902 (2023)
https://doi.org/10.1063/5.0167403
Published: September 2023
View article titled, Violet phosphorus nanosheets for room-temperature dimethylamine detection and mechanism insights by DFT calculation
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Includes: Supplementary data
Journal Articles

Low-frequency noise in quasi-ballistic monolithic Al–Ge–Al nanowire field effect transistors

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R. Behrle, M. Sistani, A. Lugstein, Z. Sadre Momtaz, M. I. den Hertog, D. Pogany, W. M. Weber
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 243504 (2023)
https://doi.org/10.1063/5.0147208
Published: June 2023
View article titled, Low-frequency noise in quasi-ballistic monolithic Al–Ge–Al nanowire field effect transistors
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Journal Articles

Interface traps, correlated mobility fluctuations, and low-frequency noise in metal–oxide–semiconductor transistors

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D. M. Fleetwood
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 173504 (2023)
https://doi.org/10.1063/5.0146549
Published: April 2023
View article titled, Interface traps, correlated mobility fluctuations, and low-frequency noise in metal–oxide–semiconductor transistors
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Journal Articles

Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices

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D. M. Fleetwood
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 070503 (2022)
https://doi.org/10.1063/5.0105173
Published: August 2022
View article titled, Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices
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Journal Articles

Study and characterization of GaN MOS capacitors: Planar vs trench topographies

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K. Mukherjee, C. De Santi, S. You, K. Geens, M. Borga, S. Decoutere, B. Bakeroot, P. Diehle, F. Altmann, G. Meneghesso, E. Zanoni, M. Meneghini
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 143501 (2022)
https://doi.org/10.1063/5.0087245
Published: April 2022
View article titled, Study and characterization of GaN MOS capacitors: Planar vs trench topographies
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Includes: Supplementary data
Journal Articles

Engineering local strain for single-atom nuclear acoustic resonance in silicon

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Laura A. O'Neill, Benjamin Joecker, Andrew D. Baczewski, Andrea Morello
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 174001 (2021)
https://doi.org/10.1063/5.0069305
Published: October 2021
View article titled, Engineering local strain for single-atom nuclear acoustic resonance in silicon
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Journal Articles

Fabrication and characterization of a self-aligned gate stack for electronics applications

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Amy C. Brummer, Amar T. Mohabir, Daniel Aziz, Michael A. Filler, Eric M. Vogel
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 142901 (2021)
https://doi.org/10.1063/5.0062163
Published: October 2021
View article titled, Fabrication and characterization of a self-aligned gate stack for electronics applications
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Includes: Supplementary data
Journal Articles

Physically defined silicon triple quantum dots charged with few electrons in metal-oxide-semiconductor structures

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S. Hiraoka, K. Horibe, R. Ishihara, S. Oda, T. Kodera
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 074001 (2020)
https://doi.org/10.1063/5.0010906
Published: August 2020
View article titled, Physically defined silicon triple quantum dots charged with few electrons in metal-oxide-semiconductor structures
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Journal Articles

Vertical limits of resistive memory scaling: The detrimental influence of interface states

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Preetam Hazra, K. B. Jinesh
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 173502 (2020)
https://doi.org/10.1063/1.5139595
Published: April 2020
View article titled, Vertical limits of resistive memory scaling: The detrimental influence of interface states
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Journal Articles

Uniform multilevel switching of graphene oxide-based RRAM achieved by embedding with gold nanoparticles for image pattern recognition

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Meng Qi, Shuo Cao, Liu Yang, Qi You, Libin Shi, Zhiying Wu
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 163503 (2020)
https://doi.org/10.1063/5.0003696
Published: April 2020
View article titled, Uniform multilevel switching of graphene oxide-based RRAM achieved by embedding with gold nanoparticles for image pattern recognition
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Includes: Supplementary data
Journal Articles

Electrical properties and interface abruptness of AlSiO gate dielectric grown on 000 1 ¯ N-polar and (0001) Ga-polar GaN

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Islam Sayed, Bastien Bonef, Wenjian Liu, Silvia Chan, Jana Georgieva, James S. Speck, Stacia Keller, Umesh K. Mishra
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 172104 (2019)
https://doi.org/10.1063/1.5125788
Published: October 2019
View article titled, Electrical properties and interface abruptness of AlSiO gate dielectric grown on 000 1 ¯ N-polar and (0001) Ga-polar GaN
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Journal Articles

Improvement of the electrical performance of Au/Ti/HfO2/Ge0.9Sn0.1 p-MOS capacitors by using interfacial layers

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T. Haffner, M. A. Mahjoub, S. Labau, J. Aubin, J. M. Hartmann, G. Ghibaudo, S. David, B. Pelissier, F. Bassani, B. Salem
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 171601 (2019)
https://doi.org/10.1063/1.5121474
Published: October 2019
View article titled, Improvement of the electrical performance of Au/Ti/HfO2/Ge0.9Sn0.1 p-MOS capacitors by using interfacial layers
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Journal Articles

Analog reversible nonvolatile memcapacitance in metal-oxide-semiconductor memcapacitor with ITO/HfOx/Si structure

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Daehoon Park, Paul Yang, Hyung Jun Kim, Keonwon Beom, Hyun Ho Lee, Chi Jung Kang, Tae-Sik Yoon
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 162102 (2018)
https://doi.org/10.1063/1.5043275
Published: October 2018
View article titled, Analog reversible nonvolatile memcapacitance in metal-oxide-semiconductor memcapacitor with ITO/HfOx/Si structure
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Journal Articles

Hybrid organic/inorganic position-sensitive detectors based on PEDOT:PSS/n-Si

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Mohammad Javadi, Mahdiyeh Gholami, Hadis Torbatiyan, Yaser Abdi
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 113302 (2018)
https://doi.org/10.1063/1.5022758
Published: March 2018
View article titled, Hybrid organic/inorganic position-sensitive detectors based on PEDOT:PSS/n-Si
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Journal Articles

Solution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits

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Luisa Petti, Pichaya Pattanasattayavong, Yen-Hung Lin, Niko Münzenrieder, Giuseppe Cantarella, Nir Yaacobi-Gross, Feng Yan, Gerhard Tröster, Thomas D. Anthopoulos
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 113504 (2017)
https://doi.org/10.1063/1.4978531
Published: March 2017
View article titled, Solution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits
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Journal Articles

Relevance of GaAs(001) surface electronic structure for high frequency dispersion on n-type accumulation capacitance

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T. W. Pi (皮敦文), W. S. Chen (陳婉馨), Y. H. Lin (林延勳), Y. T. Cheng (鄭伊婷), G. J. Wei (魏國珍), K. Y. Lin (林耕雍), C. -P. Cheng (鄭秋平), J. Kwo (郭瑞年), M. Hong (洪銘輝)
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 052107 (2017)
https://doi.org/10.1063/1.4975479
Published: February 2017
View article titled, Relevance of GaAs(001) surface electronic structure for high frequency dispersion on n-type accumulation capacitance
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Journal Articles

Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes

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Yanbin An, Aniruddh Shekhawat, Ashkan Behnam, Eric Pop, Ant Ural
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 223104 (2016)
https://doi.org/10.1063/1.4968824
Published: November 2016
View article titled, Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes
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Includes: Supplementary data