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Journal Articles

An optically transparent rectifying metasurface for 2.4/5.8 GHz dual-band RF energy harvesting

FeaturedScilight
Lin Dong, Liming Si, Boyang Liu, Qitao Shen, Rong Niu, Xiue Bao, Houjun Sun, Weiren Zhu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 011705 (2025)
https://doi.org/10.1063/5.0242451
Published: January 2025
View articletitled, An optically transparent rectifying metasurface for 2.4/5.8 GHz dual-band RF energy harvesting
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Journal Articles

Nanoring Tamm cavity in the telecommunications O band

Editor’s Pick
Huili Hou, David Dlaka, Jon Pugh, Ruth Oulton, Edmund Harbord
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 211101 (2024)
https://doi.org/10.1063/5.0213200
Published: November 2024
View articletitled, Nanoring Tamm cavity in the telecommunications O band
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Journal Articles

An ambipolar single-charge pump in silicon

Gento Yamahata, Akira Fujiwara
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 163502 (2024)
https://doi.org/10.1063/5.0231792
Published: October 2024
View articletitled, An ambipolar single-charge pump in silicon
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Journal Articles

Revealing two-dimensional electric field crowding effect in breakdown performance of DPPT-TT polymer-based OFETs

Editor’s Pick
Yabin Mou, Jun Zhang, Yiwei Ma, Shi Huang, Hengdian Chang, Haonan Lin, Xuanyu Gu, Zhiyao Wu, Jiafei Yao, Kemeng Yang, Jing Chen, Man Li, Guobin Zhang, Song Bai, Yufeng Guo
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 123504 (2024)
https://doi.org/10.1063/5.0230862
Published: September 2024
View articletitled, Revealing two-dimensional electric field crowding effect in breakdown performance of DPPT-TT polymer-based OFETs
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Journal Articles

A fast-switching low-loss field-stop IGBT with dual control gate of SIPOS material

Chunping Tang, Baoxing Duan, Yintang Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 023502 (2024)
https://doi.org/10.1063/5.0186543
Published: July 2024
View articletitled, A fast-switching low-loss field-stop IGBT with dual control gate of SIPOS material
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Journal Articles

Coupled vertical double quantum dots at single-hole occupancy

Alexander S. Ivlev, Hanifa Tidjani, Stefan D. Oosterhout, Amir Sammak, Giordano Scappucci, Menno Veldhorst
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 023501 (2024)
https://doi.org/10.1063/5.0198274
Published: July 2024
View articletitled, Coupled vertical double quantum dots at single-hole occupancy
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Journal Articles

Leveraging off-the-shelf silicon chips for quantum computing

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J. Michniewicz, M. S. Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 260502 (2024)
https://doi.org/10.1063/5.0207162
Published: June 2024
View articletitled, Leveraging off-the-shelf silicon chips for quantum computing
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Journal Articles

Noise reduction by bias cooling in gated Si/Six Ge1 − x quantum dots

Julian Ferrero, Thomas Koch, Sonja Vogel, Daniel Schroller, Viktor Adam, Ran Xue, Inga Seidler, Lars R. Schreiber, Hendrik Bluhm, Wolfgang Wernsdorfer
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 204002 (2024)
https://doi.org/10.1063/5.0206632
Published: May 2024
View articletitled, Noise reduction by bias cooling in gated Si/Six Ge1 − x quantum dots
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Journal Articles

Correlations of spin splitting and orbital fluctuations due to 1/f charge noise in the Si/SiGe quantum dot

M. Kȩpa, Ł. Cywiński, J. A. Krzywda
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 034003 (2023)
https://doi.org/10.1063/5.0156358
Published: July 2023
View articletitled, Correlations of spin splitting and orbital fluctuations due to 1/f charge noise in the Si/SiGe quantum dot
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Journal Articles

Low-frequency noise in β-(AlxGa1−x)2O3 Schottky barrier diodes

Subhajit Ghosh, Dinusha Herath Mudiyanselage, Sergey Rumyantsev, Yuji Zhao, Houqiang Fu, Stephen Goodnick, Robert Nemanich, Alexander A. Balandin
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 212109 (2023)
https://doi.org/10.1063/5.0153495
Published: May 2023
View articletitled, Low-frequency noise in β-(AlxGa1−x)2O3 Schottky barrier diodes
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Journal Articles

Ion-implanted triple-zone graded junction termination extension for vertical GaN p-n diodes

Yu Duan, Jingshan Wang, Zhongtao Zhu, Guanxi Piao, Kazutada Ikenaga, Hiroki Tokunaga, Shuuichi Koseki, Mayank Bulsara, Patrick Fay
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 212104 (2023)
https://doi.org/10.1063/5.0144898
Published: May 2023
View articletitled, Ion-implanted triple-zone graded junction termination extension for vertical GaN p-n diodes
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Journal Articles

Indium arsenide single quantum dash morphology and composition for wavelength tuning in quantum dash lasers

R.-J. K. Obhi, S. W. Schaefer, C. E. Valdivia, J. R. Liu, Z. G. Lu, P. J. Poole, K. Hinzer
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 051104 (2023)
https://doi.org/10.1063/5.0133657
Published: January 2023
View articletitled, Indium arsenide single quantum dash morphology and composition for wavelength tuning in quantum dash lasers
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Includes: Supplementary data
Journal Articles

Colloidal MoS2 quantum dots for high-performance low power resistive memory devices with excellent temperature stability

Jayanta Bera, Atanu Betal, Ashish Sharma, Arup Kumar Rath, Satyajit Sahu
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 253502 (2022)
https://doi.org/10.1063/5.0094892
Published: June 2022
View articletitled, Colloidal MoS2 quantum dots for high-performance low power resistive memory devices with excellent temperature stability
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Includes: Supplementary data
Journal Articles

The effects and mechanisms of 2 MeV proton irradiation on InP-based high electron mobility transistors

Jia-Lin Zhang, Peng Ding, Bo Mei, Sheng-Hao Meng, Chen Zhang, Liu-Hong Ma, Zhi Jin, Yi Sun, Hai-Ming Zhang, Ying-Hui Zhong
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 103501 (2022)
https://doi.org/10.1063/5.0084257
Published: March 2022
View articletitled, The effects and mechanisms of 2 MeV proton irradiation on InP-based high electron mobility transistors
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Journal Articles

Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs

Ethan S. Lee, Jungwoo Joh, Dong Seup Lee, Jesús A. del Alamo
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 082104 (2022)
https://doi.org/10.1063/5.0084123
Published: February 2022
View articletitled, Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs
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Journal Articles

Simulation-based study of single-event burnout in 4H-SiC high-voltage vertical superjunction DMOSFET: Physical failure mechanism and robustness vs performance tradeoffs

Joseph A. McPherson, Andrew A. Woodworth, T. Paul Chow, Wei Ji
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 043501 (2022)
https://doi.org/10.1063/5.0076740
Published: January 2022
View articletitled, Simulation-based study of single-event burnout in 4H-SiC high-voltage vertical superjunction DMOSFET: Physical failure mechanism and robustness vs performance tradeoffs
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Journal Articles

Improved Al2O3 RRAM performance based on SiO2/MoS2 quantum dots hybrid structure

Yiru Niu, Xinna Yu, Xinyuan Dong, Diyuan Zheng, Shuai Liu, Zhikai Gan, Ke Chang, Binbin Liu, Kang'an Jiang, Yizhen Li, Hui Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 022106 (2022)
https://doi.org/10.1063/5.0070400
Published: January 2022
View articletitled, Improved Al2O3 RRAM performance based on SiO2/MoS2 quantum dots hybrid structure
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Includes: Supplementary data
Journal Articles

Physical based compact model of Y-Flash memristor for neuromorphic computation

Wei Wang, Loai Danial, Eric Herbelin, Barak Hoffer, Batel Oved, Tzofnat Greenberg-Toledo, Evgeny Pikhay, Yakov Roizin, Shahar Kvatinsky
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 263504 (2021)
https://doi.org/10.1063/5.0069116
Published: December 2021
View articletitled, Physical based compact model of Y-Flash memristor for neuromorphic computation
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Includes: Supplementary data
Journal Articles

Over 1.8 GW/cm2 beveled-mesa NiO/β-Ga2O3 heterojunction diode with 800 V/10 A nanosecond switching capability

F. Zhou, H. H. Gong, Z. P. Wang, W. Z. Xu, X. X. Yu, Y. Yang, F.-F. Ren, S. L. Gu, R. Zhang, Y. D. Zheng, H. Lu, J. D. Ye
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 262103 (2021)
https://doi.org/10.1063/5.0071280
Published: December 2021
View articletitled, Over 1.8 GW/cm2 beveled-mesa NiO/β-Ga2O3 heterojunction diode with 800 V/10 A nanosecond switching capability
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Journal Articles

Fast and efficient germanium quantum dot photodetector with an ultrathin active layer

S. Shi, D. Pacifici, A. Zaslavsky
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 221108 (2021)
https://doi.org/10.1063/5.0073355
Published: December 2021
View articletitled, Fast and efficient germanium quantum dot photodetector with an ultrathin active layer
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