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Journal Articles

Coexistence of analog and digital resistive switching behaviors in TiN/SiN_x resistive random access memory device

Haixia Gao, Yang Zhao, Shilong Zhu, Xuan Qiu, Rui Wang, Jingli Guo, Xiaohua Ma, Yintang Yang

Appl. Phys. Lett. 125, 213502 (2024)

https://doi.org/10.1063/5.0232217

Published: November 2024

View article titled, Coexistence of analog and digital resistive switching behaviors in TiN/SiNx resistive random access memory device

Journal Articles

Orthogonal spin–orbit torque-induced deterministic switching in NiO

Yixiao Qiao, Zhengde Xu, Zhuo Xu, Yumeng Yang, Zhifeng Zhu

Appl. Phys. Lett. 125, 182403 (2024)

https://doi.org/10.1063/5.0223716

Published: October 2024

View article titled, Orthogonal spin–orbit torque-induced deterministic switching in NiO

Journal Articles

Tunable luminous color of LEDs achieved through integrating reliable multilevel RRAM

Meng Qi, Liu Yang, Tao Sun, Runze Xu, Ziyu Lv, Ye Zhou, Su-Ting Han

Appl. Phys. Lett. 125, 143506 (2024)

https://doi.org/10.1063/5.0226980

Published: October 2024

View article titled, Tunable luminous color of LEDs achieved through integrating reliable multilevel RRAM

Journal Articles

Swift heavy ion irradiation-induced enhancement of spin–orbit torque efficiency in Pt/Co/Ta trilayers

Jianrong Zhang, Yuzhi Li, Xiaodong He, Qi Zhang, Ze Yan, Yuhan Chang, Baoshan Cui, Yalu Zuo, Yan-bin Sheng, Li Xi

Appl. Phys. Lett. 125, 122404 (2024)

https://doi.org/10.1063/5.0225985

Published: September 2024

View article titled, Swift heavy ion irradiation-induced enhancement of spin–orbit torque efficiency in Pt/Co/Ta trilayers

Journal Articles

Macrospin study on magnetization reversal in synthetic antiferromagnetically coupled composite of perpendicularly magnetized nanomagnets

Toshiki Yamaji, Hiroshi Imamura

Appl. Phys. Lett. 125, 112403 (2024)

https://doi.org/10.1063/5.0224121

Published: September 2024

View article titled, Macrospin study on magnetization reversal in synthetic antiferromagnetically coupled composite of perpendicularly magnetized nanomagnets

Journal Articles

Mixed etching-oxidation process to enhance the performance of spin-transfer torque MRAM for high-performance computing

Kuan-Ming Chen, Chiao-Yun Lo, Shih-Ching Chiu, Yi-Hui Su, Yao-Jen Chang, Guan-Long Chen, Hsin-Han Lee, Xin-Yo Huang, Cheng-Yi Shih, Chih-Yao Wang, I-Jung Wang, Shan-Yi Yang, Yu-Chen Hsin, Jeng-Hua Wei, Shyh-Shyuan Sheu, Wei-Chung Lo, Shih-Chieh Chang, Yuan-Chieh Tseng

Appl. Phys. Lett. 125, 012403 (2024)

https://doi.org/10.1063/5.0217921

Published: July 2024

View article titled, Mixed etching-oxidation process to enhance the performance of spin-transfer torque MRAM for high-performance computing

Journal Articles

Efficient magnetization switching induced by spin–orbit torque in perpendicularly magnetized Mn₁₊_xCo₂₋_xAl Heusler alloys

Hongrui Qin, Xupeng Zhao, Rongkun Han, Hongli Sun, Zhicheng Xie, Dahai Wei, Jianhua Zhao

Appl. Phys. Lett. 124, 202406 (2024)

https://doi.org/10.1063/5.0200132

Published: May 2024

View article titled, Efficient magnetization switching induced by spin–orbit torque in perpendicularly magnetized Mn1+xCo2−xAl Heusler alloys

Journal Articles

Magnetization switching driven by spin current in a T-type ferromagnetic trilayer

Shiqiang Liu, Caihua Wan, Jiafeng Feng, Xuming Luo, Ran Zhang, Zhimba Zh. Namsaraev, Xiaohan Li, Fangshuo Gao, Maksim E. Stebliy, Alexey V. Ognev, Guoqiang Yu, Alexander S. Samardak, Xiufeng Han

Appl. Phys. Lett. 124, 192403 (2024)

https://doi.org/10.1063/5.0196781

Published: May 2024

View article titled, Magnetization switching driven by spin current in a T-type ferromagnetic trilayer

Journal Articles

Write error rate analysis of field-free spin-orbit torque switching in conically magnetized free layer nanomagnet

Pinkesh Kumar Mishra, Swapnil Bhuktare

Appl. Phys. Lett. 124, 162401 (2024)

https://doi.org/10.1063/5.0203874

Published: April 2024

View article titled, Write error rate analysis of field-free spin-orbit torque switching in conically magnetized free layer nanomagnet

Includes: Supplementary data

Journal Articles

Tunable anomalous Hall effect in Pt/ferrimagnetic insulator bilayer

Lin Liu, Jianxin Ye, Hui Yang, Liyu Lin, Hongyu An

Appl. Phys. Lett. 124, 132409 (2024)

https://doi.org/10.1063/5.0188886

Published: March 2024

View article titled, Tunable anomalous Hall effect in Pt/ferrimagnetic insulator bilayer

Includes: Supplementary data

Journal Articles

High performance low power multilevel oxide based RRAM devices based on TiO_xN_y/Ga₂O₃ hybrid structure

Dongsheng Cui, Zhenhua Lin, Mengyang Kang, Yifei Wang, Xiangxiang Gao, Jie Su, Jinshui Miao, Jincheng Zhang, Yue Hao, Jingjing Chang

Appl. Phys. Lett. 124, 122107 (2024)

https://doi.org/10.1063/5.0199946

Published: March 2024

View article titled, High performance low power multilevel oxide based RRAM devices based on TiOxNy/Ga2O3 hybrid structure

Includes: Supplementary data

Journal Articles

Heterogeneous integrated InP/SiC high-performance multilevel RRAM

Ruyan Kang, Zehan Liu, Pengpeng Cheng, Jian Zhou, Xiaoshan Wang, Xueyi Duan, Xiaoxuan Li, Zhiyuan Zuo

Appl. Phys. Lett. 124, 052106 (2024)

https://doi.org/10.1063/5.0187642

Published: February 2024

View article titled, Heterogeneous integrated InP/SiC high-performance multilevel RRAM

Includes: Supplementary data

Journal Articles

Ionic–electronic dynamics in an electrochemical gate stack toward high-speed artificial synapses

Or Levit, Emanuel Ber, Mor M. Dahan, Yair Keller, Eilam Yalon

Appl. Phys. Lett. 123, 213503 (2023)

https://doi.org/10.1063/5.0169127

Published: November 2023

View article titled, Ionic–electronic dynamics in an electrochemical gate stack toward high-speed artificial synapses

Journal Articles

Electric field controlled perpendicular exchange bias in Ta/Pt/Co/IrMn/Pt heterostructure

Mengxi Wang, Meiling Li, Yunhao Lu, Xiaoguang Xu, Yong Jiang

Appl. Phys. Lett. 123, 122405 (2023)

https://doi.org/10.1063/5.0160957

Published: September 2023

View article titled, Electric field controlled perpendicular exchange bias in Ta/Pt/Co/IrMn/Pt heterostructure

Includes: Supplementary data

Journal Articles

Highly uniform resistive switching characteristics of KGM resistive memory through air plasma technology

Hao-Jung Liu, Yu-Chi Chang

Appl. Phys. Lett. 123, 101604 (2023)

https://doi.org/10.1063/5.0154759

Published: September 2023

View article titled, Highly uniform resistive switching characteristics of KGM resistive memory through air plasma technology

Journal Articles

Short-range order in amorphous oxygen-deficient TaO_x thin films and its relation to electrical conductivity

Tamir Amrani, Adham Basha, Amram Azulay, George Levi, Amit Kohn, Ilan Goldfarb

Appl. Phys. Lett. 123, 063502 (2023)

https://doi.org/10.1063/5.0156335

Published: August 2023

View article titled, Short-range order in amorphous oxygen-deficient TaOx thin films and its relation to electrical conductivity

Includes: Supplementary data

Journal Articles

Manipulation of perpendicular magnetic anisotropy and spin–orbit torque switching behavior in ferrimagnetic D0₂₂-Mn₃Ga based multilayers

Xupeng Zhao, Hongli Sun, Shucheng Tong, Rongkun Han, Hongrui Qin, Jianhua Zhao

Appl. Phys. Lett. 123, 042407 (2023)

https://doi.org/10.1063/5.0155559

Published: July 2023

View article titled, Manipulation of perpendicular magnetic anisotropy and spin–orbit torque switching behavior in ferrimagnetic D022-Mn3Ga based multilayers

Includes: Supplementary data

Journal Articles

Modeling the conduction mechanisms of intrinsic multi-level states in HfO_x-based resistive random access memory

Shenghua Cheng, Xiaohu Wang, Hao Zhang, Yongbo Liu, Tingying Shen, Xinyi Li, Bin Gao, He Qian

Appl. Phys. Lett. 123, 043501 (2023)

https://doi.org/10.1063/5.0160109

Published: July 2023

View article titled, Modeling the conduction mechanisms of intrinsic multi-level states in HfOx-based resistive random access memory

Journal Articles

High-performance Ta₂O₅-based resistive random-access memory with embedded graphene quantum dots and Pt–Ag composite active layer

Renzhi Wang, Ke Chang, Xinhui Zhao, Xinna Yu, Saiqun Ma, Zhuyikang Zhao, Hui Wang

Appl. Phys. Lett. 123, 043502 (2023)

https://doi.org/10.1063/5.0156972

Published: July 2023

View article titled, High-performance Ta2O5-based resistive random-access memory with embedded graphene quantum dots and Pt–Ag composite active layer

Includes: Supplementary data

Journal Articles

A high-speed and power-efficient gradient-pulse injection method for spin-transfer torque magnetic random-access memory

Lin Sun, Lei Guo, Guocai Wang, Hua Su, Bo Liu, Xiaoli Tang

Appl. Phys. Lett. 123, 033502 (2023)

https://doi.org/10.1063/5.0153972

Published: July 2023

View article titled, A high-speed and power-efficient gradient-pulse injection method for spin-transfer torque magnetic random-access memory

NARROW

Topics

Coexistence of analog and digital resistive switching behaviors in TiN/SiN_x resistive random access memory device

Orthogonal spin–orbit torque-induced deterministic switching in NiO

Tunable luminous color of LEDs achieved through integrating reliable multilevel RRAM

Swift heavy ion irradiation-induced enhancement of spin–orbit torque efficiency in Pt/Co/Ta trilayers

Macrospin study on magnetization reversal in synthetic antiferromagnetically coupled composite of perpendicularly magnetized nanomagnets

Mixed etching-oxidation process to enhance the performance of spin-transfer torque MRAM for high-performance computing

Efficient magnetization switching induced by spin–orbit torque in perpendicularly magnetized Mn₁₊_xCo₂₋_xAl Heusler alloys

Magnetization switching driven by spin current in a T-type ferromagnetic trilayer

Write error rate analysis of field-free spin-orbit torque switching in conically magnetized free layer nanomagnet

Tunable anomalous Hall effect in Pt/ferrimagnetic insulator bilayer

High performance low power multilevel oxide based RRAM devices based on TiO_xN_y/Ga₂O₃ hybrid structure

Heterogeneous integrated InP/SiC high-performance multilevel RRAM

Ionic–electronic dynamics in an electrochemical gate stack toward high-speed artificial synapses

Electric field controlled perpendicular exchange bias in Ta/Pt/Co/IrMn/Pt heterostructure

Highly uniform resistive switching characteristics of KGM resistive memory through air plasma technology

Short-range order in amorphous oxygen-deficient TaO_x thin films and its relation to electrical conductivity

Manipulation of perpendicular magnetic anisotropy and spin–orbit torque switching behavior in ferrimagnetic D0₂₂-Mn₃Ga based multilayers

Modeling the conduction mechanisms of intrinsic multi-level states in HfO_x-based resistive random access memory

High-performance Ta₂O₅-based resistive random-access memory with embedded graphene quantum dots and Pt–Ag composite active layer

A high-speed and power-efficient gradient-pulse injection method for spin-transfer torque magnetic random-access memory

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