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Journal Articles

Nanoring Tamm cavity in the telecommunications O band

Editor’s PickOpen Access
Huili Hou, David Dlaka, Jon Pugh, Ruth Oulton, Edmund Harbord
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 211101 (2024)
https://doi.org/10.1063/5.0213200
Published: November 2024
View article titled, Nanoring Tamm cavity in the telecommunications O band
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Journal Articles

An ambipolar single-charge pump in silicon

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Gento Yamahata, Akira Fujiwara
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 163502 (2024)
https://doi.org/10.1063/5.0231792
Published: October 2024
View article titled, An ambipolar single-charge pump in silicon
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Journal Articles

Coupled vertical double quantum dots at single-hole occupancy

Open Access
Alexander S. Ivlev, Hanifa Tidjani, Stefan D. Oosterhout, Amir Sammak, Giordano Scappucci, Menno Veldhorst
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 023501 (2024)
https://doi.org/10.1063/5.0198274
Published: July 2024
View article titled, Coupled vertical double quantum dots at single-hole occupancy
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Journal Articles

Leveraging off-the-shelf silicon chips for quantum computing

FeaturedScilightOpen Access
J. Michniewicz, M. S. Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 260502 (2024)
https://doi.org/10.1063/5.0207162
Published: June 2024
View article titled, Leveraging off-the-shelf silicon chips for quantum computing
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Journal Articles

Noise reduction by bias cooling in gated Si/Six Ge1 − x quantum dots

Open Access
Julian Ferrero, Thomas Koch, Sonja Vogel, Daniel Schroller, Viktor Adam, Ran Xue, Inga Seidler, Lars R. Schreiber, Hendrik Bluhm, Wolfgang Wernsdorfer
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 204002 (2024)
https://doi.org/10.1063/5.0206632
Published: May 2024
View article titled, Noise reduction by bias cooling in gated Si/Six Ge1 − x quantum dots
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Journal Articles

Correlations of spin splitting and orbital fluctuations due to 1/f charge noise in the Si/SiGe quantum dot

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M. Kȩpa, Ł. Cywiński, J. A. Krzywda
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 034003 (2023)
https://doi.org/10.1063/5.0156358
Published: July 2023
View article titled, Correlations of spin splitting and orbital fluctuations due to 1/f charge noise in the Si/SiGe quantum dot
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Journal Articles

Flopping-mode spin qubit in a Si-MOS quantum dot

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Rui-Zi Hu, Rong-Long Ma, Ming Ni, Yuan Zhou, Ning Chu, Wei-Zhu Liao, Zhen-Zhen Kong, Gang Cao, Gui-Lei Wang, Hai-Ou Li, Guo-Ping Guo
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 134002 (2023)
https://doi.org/10.1063/5.0137259
Published: March 2023
View article titled, Flopping-mode spin qubit in a Si-MOS quantum dot
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Includes: Supplementary data
Journal Articles

Indium arsenide single quantum dash morphology and composition for wavelength tuning in quantum dash lasers

Open Access
R.-J. K. Obhi, S. W. Schaefer, C. E. Valdivia, J. R. Liu, Z. G. Lu, P. J. Poole, K. Hinzer
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 051104 (2023)
https://doi.org/10.1063/5.0133657
Published: January 2023
View article titled, Indium arsenide single quantum dash morphology and composition for wavelength tuning in quantum dash lasers
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Includes: Supplementary data
Journal Articles

Colloidal MoS2 quantum dots for high-performance low power resistive memory devices with excellent temperature stability

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Jayanta Bera, Atanu Betal, Ashish Sharma, Arup Kumar Rath, Satyajit Sahu
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 253502 (2022)
https://doi.org/10.1063/5.0094892
Published: June 2022
View article titled, Colloidal MoS2 quantum dots for high-performance low power resistive memory devices with excellent temperature stability
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Includes: Supplementary data
Journal Articles

Improved Al2O3 RRAM performance based on SiO2/MoS2 quantum dots hybrid structure

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Yiru Niu, Xinna Yu, Xinyuan Dong, Diyuan Zheng, Shuai Liu, Zhikai Gan, Ke Chang, Binbin Liu, Kang'an Jiang, Yizhen Li, Hui Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 022106 (2022)
https://doi.org/10.1063/5.0070400
Published: January 2022
View article titled, Improved Al2O3 RRAM performance based on SiO2/MoS2 quantum dots hybrid structure
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Includes: Supplementary data
Journal Articles

Fast and efficient germanium quantum dot photodetector with an ultrathin active layer

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S. Shi, D. Pacifici, A. Zaslavsky
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 221108 (2021)
https://doi.org/10.1063/5.0073355
Published: December 2021
View article titled, Fast and efficient germanium quantum dot photodetector with an ultrathin active layer
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Journal Articles

Achieving stable fiber coupling of quantum dot telecom C-band single-photons to an SOI photonic device

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Stephanie Bauer, Dongze Wang, Niklas Hoppe, Cornelius Nawrath, Julius Fischer, Norbert Witz, Mathias Kaschel, Christian Schweikert, Michael Jetter, Simone L. Portalupi, Manfred Berroth, Peter Michler
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 211101 (2021)
https://doi.org/10.1063/5.0067749
Published: November 2021
View article titled, Achieving stable fiber coupling of quantum dot telecom C-band single-photons to an SOI photonic device
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Journal Articles

Engineering local strain for single-atom nuclear acoustic resonance in silicon

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Laura A. O'Neill, Benjamin Joecker, Andrew D. Baczewski, Andrea Morello
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 174001 (2021)
https://doi.org/10.1063/5.0069305
Published: October 2021
View article titled, Engineering local strain for single-atom nuclear acoustic resonance in silicon
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Journal Articles

Single-electron pump with highly controllable plateaus

Editor’s PickOpen Access
H. Howe, M. Blumenthal, H. E. Beere, T. Mitchell, D. A. Ritchie, M. Pepper
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 153102 (2021)
https://doi.org/10.1063/5.0067428
Published: October 2021
View article titled, Single-electron pump with highly controllable plateaus
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Includes: Supplementary data
Journal Articles

Hybrid quantum devices: Guest editorial

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Yiwen Chu, Jonathan D. Pritchard, Hailin Wang, Martin Weides
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 240401 (2021)
https://doi.org/10.1063/5.0057740
Published: June 2021
View article titled, Hybrid quantum devices: Guest editorial
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Journal Articles

Double quantum dot-like transport in controllably doped graphene nanoribbon

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Zhongwang Wang, Yahua Yuan, Xiaochi Liu, Manoharan Muruganathan, Hiroshi Mizuta, Jian Sun
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 083105 (2021)
https://doi.org/10.1063/5.0038419
Published: February 2021
View article titled, Double quantum dot-like transport in controllably doped graphene nanoribbon
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Journal Articles

A two-dimensional array of single-hole quantum dots

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F. van Riggelen, N. W. Hendrickx, W. I. L. Lawrie, M. Russ, A. Sammak, G. Scappucci, M. Veldhorst
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 044002 (2021)
https://doi.org/10.1063/5.0037330
Published: January 2021
View article titled, A two-dimensional array of single-hole quantum dots
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Includes: Supplementary data
Journal Articles

Cavity quantum electro-dynamics with solid-state emitters in aperiodic nano-photonic spiral devices

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Oliver J. Trojak, Sean Gorsky, Fabrizio Sgrignuoli, Felipe A. Pinheiro, Suk-In Park, Jin Dong Song, Luca Dal Negro, Luca Sapienza
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 124006 (2020)
https://doi.org/10.1063/5.0024719
Published: September 2020
View article titled, Cavity quantum electro-dynamics with solid-state emitters in aperiodic nano-photonic spiral devices
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Includes: Supplementary data
Journal Articles

Quantum dot arrays in silicon and germanium

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W. I. L. Lawrie, H. G. J. Eenink, N. W. Hendrickx, J. M. Boter, L. Petit, S. V. Amitonov, M. Lodari, B. Paquelet Wuetz, C. Volk, S. G. J. Philips, G. Droulers, N. Kalhor, F. van Riggelen, D. Brousse, A. Sammak, L. M. K. Vandersypen, G. Scappucci, M. Veldhorst
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 080501 (2020)
https://doi.org/10.1063/5.0002013
Published: February 2020
View article titled, Quantum dot arrays in silicon and germanium
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Includes: Supplementary data
Journal Articles

InAs/InP quantum dot VECSEL emitting at 1.5 μ m

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K. Nechay, A. Mereuta, C. Paranthoen, G. Brévalle, C. Levallois, M. Alouini, N. Chevalier, M. Perrin, G. Suruceanu, A. Caliman, M. Guina, E. Kapon
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 171105 (2019)
https://doi.org/10.1063/1.5125632
Published: October 2019
View article titled, InAs/InP quantum dot VECSEL emitting at 1.5 μ m
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