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Journal Articles

Voltage scheme for string-select transistors to improve inhibition characteristics during 1-bit erase in vertical NAND flash

Sung-Ho Park, Ho-Nam Yoo, Yeongheon Yang, Jong-Won Back, Ryun-Han Koo, Dongseok Kwon, Jae-Joon Kim, Jong-Ho Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 142101 (2023)
https://doi.org/10.1063/5.0161000
Published: October 2023
View article titled, Voltage scheme for string-select transistors to improve inhibition characteristics during 1-bit erase in vertical NAND flash
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Journal Articles

Double-floating-gate memory device based on energy band engineered van der Waals heterostructure

Fei Tang, Xiaochi Liu, Xianfu Dai, Yahua Yuan, Yumei Jing, Jian Sun
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 133503 (2023)
https://doi.org/10.1063/5.0169054
Published: September 2023
View article titled, Double-floating-gate memory device based on energy band engineered van der Waals heterostructure
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Includes: Supplementary data
Journal Articles

Phase-change-assisted spin-transfer torque switching in perpendicular magnetic tunnel junctions

Shen Li, Chen Lv, Xiaoyang Lin, Guodong Wei, Yiang Xiong, Wei Yang, Zhaohao Wang, Youguang Zhang, Weisheng Zhao
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 122401 (2021)
https://doi.org/10.1063/5.0054491
Published: September 2021
View article titled, Phase-change-assisted spin-transfer torque switching in perpendicular magnetic tunnel junctions
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Journal Articles

Nonvolatile memory based on redox-active ruthenium molecular monolayers

Kai Jiang, Sujitra J. Pookpanratana, Tong Ren, Sean N. Natoli, Brent A. Sperling, Joseph Robertson, Curt A. Richter, Sheng Yu, Qiliang Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 162102 (2019)
https://doi.org/10.1063/1.5108675
Published: October 2019
View article titled, Nonvolatile memory based on redox-active ruthenium molecular monolayers
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Journal Articles

Integration of graphene oxide buffer layer/graphene floating gate for wide memory window in Pt/Ti/Al2O3/GO/graphene/SiO2/p-Si/Au non-volatile (FLASH) applications

Mahesh Soni, Ajay Soni, Satinder K. Sharma
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 252102 (2018)
https://doi.org/10.1063/1.5030020
Published: June 2018
View article titled, Integration of graphene oxide buffer layer/graphene floating gate for wide memory window in Pt/Ti/Al<sub>2</sub>O<sub>3</sub>/GO/graphene/SiO<sub>2</sub>/p-Si/Au non-volatile (FLASH) applications
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Journal Articles

Low-voltage all-inorganic perovskite quantum dot transistor memory

Zhiliang Chen, Yating Zhang, Heng Zhang, Yu Yu, Xiaoxian Song, Haiting Zhang, Mingxuan Cao, Yongli Che, Lufan Jin, Yifan Li, Qingyan Li, Haitao Dai, Junbo Yang, Jianquan Yao
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 212101 (2018)
https://doi.org/10.1063/1.5028474
Published: May 2018
View article titled, Low-voltage all-inorganic perovskite quantum dot transistor memory
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Includes: Supplementary data
Journal Articles

Suppressing the memory state of floating gate transistors with repeated femtosecond laser backside irradiations

Maxime Chambonneau, Sarra Souiki-Figuigui, Philippe Chiquet, Vincenzo Della Marca, Jérémy Postel-Pellerin, Pierre Canet, Jean-Michel Portal, David Grojo
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 161112 (2017)
https://doi.org/10.1063/1.4982032
Published: April 2017
View article titled, Suppressing the memory state of floating gate transistors with repeated femtosecond laser backside irradiations
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Includes: Supplementary data
Journal Articles

Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires

Guangdong Zhou, Bai Sun, Yanqing Yao, Huihui Zhang, Ankun Zhou, Kamal Alameh, Baofu Ding, Qunliang Song
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 143904 (2016)
https://doi.org/10.1063/1.4962655
Published: October 2016
View article titled, Investigation of the behaviour of electronic resistive switching memory based on MoSe<sub>2</sub>-doped ultralong Se microwires
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Journal Articles

Growth and structure of In0.5Ga0.5Sb quantum dots on GaP(001)

E. M. Sala, G. Stracke, S. Selve, T. Niermann, M. Lehmann, S. Schlichting, F. Nippert, G. Callsen, A. Strittmatter, D. Bimberg
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 102102 (2016)
https://doi.org/10.1063/1.4962273
Published: September 2016
View article titled, Growth and structure of In<sub>0.5</sub>Ga<sub>0.5</sub>Sb quantum dots on GaP(001)
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Journal Articles

Memory operation mechanism of fullerene-containing polymer memory

Anri Nakajima, Daiki Fujii
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 103302 (2015)
https://doi.org/10.1063/1.4914881
Published: March 2015
View article titled, Memory operation mechanism of fullerene-containing polymer memory
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Journal Articles

Percolation conductivity in hafnium sub-oxides

D. R. Islamov, V. A. Gritsenko, C. H. Cheng, A. Chin
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 262903 (2014)
https://doi.org/10.1063/1.4905308
Published: December 2014
View article titled, Percolation conductivity in hafnium sub-oxides
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Journal Articles

Polarization of Bi2Te3 thin film in a floating-gate capacitor structure

Hui Yuan, Kai Zhang, Haitao Li, Hao Zhu, John E. Bonevich, Helmut Baumgart, Curt A. Richter, Qiliang Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 233505 (2014)
https://doi.org/10.1063/1.4904003
Published: December 2014
View article titled, Polarization of Bi<sub>2</sub>Te<sub>3</sub> thin film in a floating-gate capacitor structure
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Journal Articles

Origin of traps and charge transport mechanism in hafnia

D. R. Islamov, V. A. Gritsenko, C. H. Cheng, A. Chin
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 222901 (2014)
https://doi.org/10.1063/1.4903169
Published: December 2014
View article titled, Origin of traps and charge transport mechanism in hafnia
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Journal Articles

Investigation of p-channel and n-channel junctionless gate-all-around polycrystalline silicon nanowires with silicon nanocrystals nonvolatile memory

Mu-Shih Yeh, Yung-Chun Wu, Ming-Hsien Chung, Yi-Ruei Jhan, Kuei-Shu Chang-Liao, Kuan-Cheng Liu, Min-Hsin Wu, Min-Feng Hung
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 042109 (2014)
https://doi.org/10.1063/1.4891815
Published: July 2014
View article titled, Investigation of p-channel and n-channel junctionless gate-all-around polycrystalline silicon nanowires with silicon nanocrystals nonvolatile memory
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Journal Articles

Discrete charge states in nanowire flash memory with multiple Ta2O5 charge-trapping stacks

Hao Zhu, John E. Bonevich, Haitao Li, Curt A. Richter, Hui Yuan, Oleg Kirillov, Qiliang Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 233504 (2014)
https://doi.org/10.1063/1.4883717
Published: June 2014
View article titled, Discrete charge states in nanowire flash memory with multiple Ta<sub>2</sub>O<sub>5</sub> charge-trapping stacks
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Journal Articles

Origin of the reverse optical-contrast change of Ga-Sb phase-change materials—An ab initio molecular-dynamics study

J. A. Dixon, S. R. Elliott
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 141905 (2014)
https://doi.org/10.1063/1.4870810
Published: April 2014
View article titled, Origin of the reverse optical-contrast change of Ga-Sb phase-change materials—An <em>ab initio</em> molecular-dynamics study
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Journal Articles

Non-volatile memory with self-assembled ferrocene charge trapping layer

Hao Zhu, Christina A. Hacker, Sujitra J. Pookpanratana, Curt A. Richter, Hui Yuan, Haitao Li, Oleg Kirillov, Dimitris E. Ioannou, Qiliang Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 053102 (2013)
https://doi.org/10.1063/1.4817009
Published: July 2013
View article titled, Non-volatile memory with self-assembled ferrocene charge trapping layer
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Journal Articles

Current density enhancement nano-contact phase-change memory for low writing current

You Yin, Sumio Hosaka, Woon Ik Park, Yeon Sik Jung, Keon Jae Lee, Byoung Kuk You, Yang Liu, Qi Yu
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 033116 (2013)
https://doi.org/10.1063/1.4816080
Published: July 2013
View article titled, Current density enhancement nano-contact phase-change memory for low writing current
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Journal Articles

Multi-level memory-switching properties of a single brain microtubule

Satyajit Sahu, Subrata Ghosh, Kazuto Hirata, Daisuke Fujita, Anirban Bandyopadhyay
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 123701 (2013)
https://doi.org/10.1063/1.4793995
Published: March 2013
View article titled, Multi-level memory-switching properties of a single brain microtubule
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Journal Articles

Multilevel resistive switching memory with amorphous InGaZnO-based thin film

Ching-Hui Hsu, Yang-Shun Fan, Po-Tsun Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 062905 (2013)
https://doi.org/10.1063/1.4792316
Published: February 2013
View article titled, Multilevel resistive switching memory with amorphous InGaZnO-based thin film
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