Page 1 | Search Results | Applied Physics Letters

1-20 of 125

Sort by

Sort Order Select

Journal Articles

Up to 60% energy saving for GST-based confined phase change memory using paired pulses RESET operation scheme

Ze-Hua Cao, Xi Wang, Rong-Jiang Zhu, Zi-Yang Liu, Ming Xu, Hao Tong, Qiang He, Xiang-Shui Miao

Appl. Phys. Lett. 125, 213505 (2024)

https://doi.org/10.1063/5.0234139

Published: November 2024

View article titled, Up to 60% energy saving for GST-based confined phase change memory using paired pulses RESET operation scheme

Journal Articles

Room temperature-produced chalcogenide superlattices for interfacial phase-change memory

S. Asanuma, N. Miyata, Y. Miyaguchi, K. Horita, T. Jimbo, T. Masuda, J. Tominaga

Appl. Phys. Lett. 125, 043504 (2024)

https://doi.org/10.1063/5.0203072

Published: July 2024

View article titled, Room temperature-produced chalcogenide superlattices for interfacial phase-change memory

Journal Articles

Electronic transport in amorphous Ge₂Sb₂Te₅ phase-change memory line cells and its response to photoexcitation

A. Talukder, M. Kashem, M. Hafiz, R. Khan, F. Dirisaglik, H. Silva, A. Gokirmak

Appl. Phys. Lett. 124, 263501 (2024)

https://doi.org/10.1063/5.0196842

Published: June 2024

View article titled, Electronic transport in amorphous Ge2Sb2Te5 phase-change memory line cells and its response to photoexcitation

Journal Articles

Understanding the microstructure evolution of carbon-doped Sb₂Te₃ phase change material for high thermal stability memory application

Mengyu Zhang, Ruobing Wang, Xixi Zou, Sannian Song, Yun Bao, Liangcai Wu, Zhitang Song, Xilin Zhou

Appl. Phys. Lett. 124, 202101 (2024)

https://doi.org/10.1063/5.0206244

Published: May 2024

View article titled, Understanding the microstructure evolution of carbon-doped Sb2Te3 phase change material for high thermal stability memory application

Journal Articles

Direct observation of phase-change volume in contact resistance change memory using N-doped Cr₂Ge₂Te₆ phase-change material

Yi Shuang, Daisuke Ando, Yunheub Song, Yuji Sutou

Appl. Phys. Lett. 124, 061907 (2024)

https://doi.org/10.1063/5.0190632

Published: February 2024

View article titled, Direct observation of phase-change volume in contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material

Includes: Supplementary data

Journal Articles

Metal–insulator transition in Sc_xSb₂Te₃ phase-change memory alloys

Tao Song, Bin Chen, Jiatao Xie, Zhaoyang Liu, Huang Gong, Keyuan Ding, Feng Rao

Appl. Phys. Lett. 124, 062106 (2024)

https://doi.org/10.1063/5.0185388

Published: February 2024

View article titled, Metal–insulator transition in ScxSb2Te3 phase-change memory alloys

Includes: Supplementary data

Journal Articles

Realization of fast-speed and low-power phase change memory by optimizing Ge₁₀Sb₉₀ film with samarium doping

Han Gu, Weihua Wu, Xiaochen Zhou, Pei Zhang, Bowen Fu, Xiaoqin Zhu, Sannian Song, Zhitang Song

Appl. Phys. Lett. 124, 012104 (2024)

https://doi.org/10.1063/5.0174004

Published: January 2024

View article titled, Realization of fast-speed and low-power phase change memory by optimizing Ge10Sb90 film with samarium doping

Journal Articles

Co-doping: An effective strategy for developing stable and high-speed Sb₂Te-based phase-change memory

Jing Hu, Cong Lin, Yan Cheng, Yonghui Zheng, Tao Wei, Wanfei Li, Yun Ling, Qianqian Liu, Miao Cheng, Ruirui Wang, Sannian Song, Zhitang Song, Yinghui Wei, Bo Liu

Appl. Phys. Lett. 122, 222108 (2023)

https://doi.org/10.1063/5.0146349

Published: June 2023

View article titled, Co-doping: An effective strategy for developing stable and high-speed Sb2Te-based phase-change memory

Includes: Supplementary data

Journal Articles

Phase-change control of anomalous Hall effect in ferromagnetic MnBi thin films

Siyue Zhang, Yu Miyazaki, Tomoyuki Yokouchi, Yuki Shiomi

Appl. Phys. Lett. 121, 262402 (2022)

https://doi.org/10.1063/5.0121284

Published: December 2022

View article titled, Phase-change control of anomalous Hall effect in ferromagnetic MnBi thin films

Includes: Supplementary data

Journal Articles

Joule heating induced non-melting phase transition and multi-level conductance in MoTe₂ based phase change memory

Zhe Yang, Dayou Zhang, Jingwei Cai, Chuantao Gong, Qiang He, Ming Xu, Hao Tong, Xiangshui Miao

Appl. Phys. Lett. 121, 203508 (2022)

https://doi.org/10.1063/5.0127160

Published: November 2022

View article titled, Joule heating induced non-melting phase transition and multi-level conductance in MoTe2 based phase change memory

Journal Articles

Failure mechanism investigation and endurance improvement in Te-rich Ge–Te based ovonic threshold switching selectors

Lun Wang, Jinyu Wen, Rongjiang Zhu, Jiangxi Chen, Hao Tong, Xiangshui Miao

Appl. Phys. Lett. 121, 193501 (2022)

https://doi.org/10.1063/5.0127177

Published: November 2022

View article titled, Failure mechanism investigation and endurance improvement in Te-rich Ge–Te based ovonic threshold switching selectors

Journal Articles

Temperature-dependent thermal resistance of phase change memory

Keren Stern, Yair Keller, Christopher M. Neumann, Eric Pop, Eilam Yalon

Appl. Phys. Lett. 120, 113501 (2022)

https://doi.org/10.1063/5.0081016

Published: March 2022

View article titled, Temperature-dependent thermal resistance of phase change memory

Includes: Supplementary data

Journal Articles

Internal reverse-biased p–n junctions: A possible origin of the high resistance in chalcogenide superlattice for interfacial phase change memory

Bowen Li, Longlong Xu, Yuzheng Guo, Huanglong Li

Appl. Phys. Lett. 120, 073504 (2022)

https://doi.org/10.1063/5.0081865

Published: February 2022

View article titled, Internal reverse-biased p–n junctions: A possible origin of the high resistance in chalcogenide superlattice for interfacial phase change memory

Includes: Supplementary data

Journal Articles

Electronic and thermal properties of GeTe/Sb₂Te₃ superlattices by ab initio approach: Impact of Van der Waals gaps on vertical lattice thermal conductivity

Benoît Sklénard, François Triozon, Chiara Sabbione, Lavinia Nistor, Michel Frei, Gabriele Navarro, Jing Li

Appl. Phys. Lett. 119, 201911 (2021)

https://doi.org/10.1063/5.0073469

Published: November 2021

View article titled, Electronic and thermal properties of GeTe/Sb2Te3 superlattices by ab initio approach: Impact of Van der Waals gaps on vertical lattice thermal conductivity

Includes: Supplementary data

Journal Articles

Threshold switching in solar cells and a no-scribe photovoltaic technology

Victor G. Karpov, Diana Shvydka, Sandip S. Bista

Appl. Phys. Lett. 119, 193904 (2021)

https://doi.org/10.1063/5.0066434

Published: November 2021

View article titled, Threshold switching in solar cells and a no-scribe photovoltaic technology

Journal Articles

Crystallization mechanism and switching behavior of In–S–Sb phase change thin films

Guoxiang Wang, Fen Liu, Yegang Lu, Yimin Chen, Xiang Shen

Appl. Phys. Lett. 119, 011601 (2021)

https://doi.org/10.1063/5.0054392

Published: July 2021

View article titled, Crystallization mechanism and switching behavior of In–S–Sb phase change thin films

Journal Articles

Effects of Ca doping on the crystallization kinetics of GeTe

Chenfei Wang, Guanjun Yao, Juncheng Liu, Yuanen Mao, Wenhao Leng, Yimin Chen, Xiang Shen, Jun-Qiang Wang, Rongping Wang

Appl. Phys. Lett. 118, 211904 (2021)

https://doi.org/10.1063/5.0051288

Published: May 2021

View article titled, Effects of Ca doping on the crystallization kinetics of GeTe

Journal Articles

Experimental evidence for non-purely electric field-induced threshold switching and modified thermal-assisted model in GeTe phase change material

Ziqi Chen, Hao Tong, Xin Li, Lun Wang, Ruizhe Zhao, Wei Gu, Xiangshui Miao

Appl. Phys. Lett. 118, 203502 (2021)

https://doi.org/10.1063/5.0048883

Published: May 2021

View article titled, Experimental evidence for non-purely electric field-induced threshold switching and modified thermal-assisted model in GeTe phase change material

Journal Articles

Characterizations of electronic and optical properties of Sb-based phase-change material stabilized by alloying Cr

Chao Chen, Jun Lin, Xianliang Mai, Chong Qiao, Hao Tong, Xiaomin Cheng, Songyou Wang, Cai-Zhuang Wang, Kai-Ming Ho, Ming Xu, Xiangshui Miao

Appl. Phys. Lett. 118, 042104 (2021)

https://doi.org/10.1063/5.0034533

Published: January 2021

View article titled, Characterizations of electronic and optical properties of Sb-based phase-change material stabilized by alloying Cr

Journal Articles

Suppressed resistance drift from short range order of amorphous GeTe ultrathin films

Ping Ma, Hao Tong, Ming Xu, Xiaomin Cheng, Xiangshui Miao

Appl. Phys. Lett. 117, 022109 (2020)

https://doi.org/10.1063/5.0009362

Published: July 2020

View article titled, Suppressed resistance drift from short range order of amorphous GeTe ultrathin films

Includes: Supplementary data

NARROW

Topics

Up to 60% energy saving for GST-based confined phase change memory using paired pulses RESET operation scheme

Room temperature-produced chalcogenide superlattices for interfacial phase-change memory

Electronic transport in amorphous Ge₂Sb₂Te₅ phase-change memory line cells and its response to photoexcitation

Understanding the microstructure evolution of carbon-doped Sb₂Te₃ phase change material for high thermal stability memory application

Direct observation of phase-change volume in contact resistance change memory using N-doped Cr₂Ge₂Te₆ phase-change material

Metal–insulator transition in Sc_xSb₂Te₃ phase-change memory alloys

Realization of fast-speed and low-power phase change memory by optimizing Ge₁₀Sb₉₀ film with samarium doping

Co-doping: An effective strategy for developing stable and high-speed Sb₂Te-based phase-change memory

Phase-change control of anomalous Hall effect in ferromagnetic MnBi thin films

Joule heating induced non-melting phase transition and multi-level conductance in MoTe₂ based phase change memory

Failure mechanism investigation and endurance improvement in Te-rich Ge–Te based ovonic threshold switching selectors

Temperature-dependent thermal resistance of phase change memory

Internal reverse-biased p–n junctions: A possible origin of the high resistance in chalcogenide superlattice for interfacial phase change memory

Electronic and thermal properties of GeTe/Sb₂Te₃ superlattices by ab initio approach: Impact of Van der Waals gaps on vertical lattice thermal conductivity

Threshold switching in solar cells and a no-scribe photovoltaic technology

Crystallization mechanism and switching behavior of In–S–Sb phase change thin films

Effects of Ca doping on the crystallization kinetics of GeTe

Experimental evidence for non-purely electric field-induced threshold switching and modified thermal-assisted model in GeTe phase change material

Characterizations of electronic and optical properties of Sb-based phase-change material stabilized by alloying Cr

Suppressed resistance drift from short range order of amorphous GeTe ultrathin films

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only