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Journal Articles

MoS2-based transistor with asymmetric Schottky contacts for self-powered broadband photodetection and visual synapse

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Xianjun Zhang, Hangyu Li, Peihong Song, Yu Qin, Pengfei Hou
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 192102 (2025)
https://doi.org/10.1063/5.0266251
Published: May 2025
View articletitled, MoS2-based transistor with asymmetric Schottky contacts for self-powered broadband photodetection and visual synapse
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Journal Articles

Nanoring Tamm cavity in the telecommunications O band

Editor’s PickOpen Access
Huili Hou, David Dlaka, Jon Pugh, Ruth Oulton, Edmund Harbord
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 211101 (2024)
https://doi.org/10.1063/5.0213200
Published: November 2024
View articletitled, Nanoring Tamm cavity in the telecommunications O band
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Journal Articles

An ambipolar single-charge pump in silicon

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Gento Yamahata, Akira Fujiwara
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 163502 (2024)
https://doi.org/10.1063/5.0231792
Published: October 2024
View articletitled, An ambipolar single-charge pump in silicon
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Journal Articles

Revealing two-dimensional electric field crowding effect in breakdown performance of DPPT-TT polymer-based OFETs

Editor’s PickAvailable to Purchase
Yabin Mou, Jun Zhang, Yiwei Ma, Shi Huang, Hengdian Chang, Haonan Lin, Xuanyu Gu, Zhiyao Wu, Jiafei Yao, Kemeng Yang, Jing Chen, Man Li, Guobin Zhang, Song Bai, Yufeng Guo
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 123504 (2024)
https://doi.org/10.1063/5.0230862
Published: September 2024
View articletitled, Revealing two-dimensional electric field crowding effect in breakdown performance of DPPT-TT polymer-based OFETs
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Journal Articles

Improving the efficiency and stability of betavoltaic batteries based on understanding efficiency fluctuations and gaps with theoretical limits

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Chiwen Qian, Hui Guo, Chao Han, Zhenlin Lu, Hao Yuan, Yuming Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 073903 (2024)
https://doi.org/10.1063/5.0208929
Published: August 2024
View articletitled, Improving the efficiency and stability of betavoltaic batteries based on understanding efficiency fluctuations and gaps with theoretical limits
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Journal Articles

Coupled vertical double quantum dots at single-hole occupancy

Open Access
Alexander S. Ivlev, Hanifa Tidjani, Stefan D. Oosterhout, Amir Sammak, Giordano Scappucci, Menno Veldhorst
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 023501 (2024)
https://doi.org/10.1063/5.0198274
Published: July 2024
View articletitled, Coupled vertical double quantum dots at single-hole occupancy
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Journal Articles

Leveraging off-the-shelf silicon chips for quantum computing

FeaturedScilightOpen Access
J. Michniewicz, M. S. Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 260502 (2024)
https://doi.org/10.1063/5.0207162
Published: June 2024
View articletitled, Leveraging off-the-shelf silicon chips for quantum computing
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Journal Articles

Noise reduction by bias cooling in gated Si/Six Ge1 − x quantum dots

Open Access
Julian Ferrero, Thomas Koch, Sonja Vogel, Daniel Schroller, Viktor Adam, Ran Xue, Inga Seidler, Lars R. Schreiber, Hendrik Bluhm, Wolfgang Wernsdorfer
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 204002 (2024)
https://doi.org/10.1063/5.0206632
Published: May 2024
View articletitled, Noise reduction by bias cooling in gated Si/Six Ge1 − x quantum dots
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Journal Articles

Correlations of spin splitting and orbital fluctuations due to 1/f charge noise in the Si/SiGe quantum dot

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M. Kȩpa, Ł. Cywiński, J. A. Krzywda
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 034003 (2023)
https://doi.org/10.1063/5.0156358
Published: July 2023
View articletitled, Correlations of spin splitting and orbital fluctuations due to 1/f charge noise in the Si/SiGe quantum dot
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Journal Articles

Low-frequency noise in β-(AlxGa1−x)2O3 Schottky barrier diodes

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Subhajit Ghosh, Dinusha Herath Mudiyanselage, Sergey Rumyantsev, Yuji Zhao, Houqiang Fu, Stephen Goodnick, Robert Nemanich, Alexander A. Balandin
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 212109 (2023)
https://doi.org/10.1063/5.0153495
Published: May 2023
View articletitled, Low-frequency noise in β-(AlxGa1−x)2O3 Schottky barrier diodes
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Journal Articles

Flopping-mode spin qubit in a Si-MOS quantum dot

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Rui-Zi Hu, Rong-Long Ma, Ming Ni, Yuan Zhou, Ning Chu, Wei-Zhu Liao, Zhen-Zhen Kong, Gang Cao, Gui-Lei Wang, Hai-Ou Li, Guo-Ping Guo
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 134002 (2023)
https://doi.org/10.1063/5.0137259
Published: March 2023
View articletitled, Flopping-mode spin qubit in a Si-MOS quantum dot
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Includes: Supplementary data
Journal Articles

Indium arsenide single quantum dash morphology and composition for wavelength tuning in quantum dash lasers

Open Access
R.-J. K. Obhi, S. W. Schaefer, C. E. Valdivia, J. R. Liu, Z. G. Lu, P. J. Poole, K. Hinzer
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 051104 (2023)
https://doi.org/10.1063/5.0133657
Published: January 2023
View articletitled, Indium arsenide single quantum dash morphology and composition for wavelength tuning in quantum dash lasers
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Includes: Supplementary data
Journal Articles

Colloidal MoS2 quantum dots for high-performance low power resistive memory devices with excellent temperature stability

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Jayanta Bera, Atanu Betal, Ashish Sharma, Arup Kumar Rath, Satyajit Sahu
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 253502 (2022)
https://doi.org/10.1063/5.0094892
Published: June 2022
View articletitled, Colloidal MoS2 quantum dots for high-performance low power resistive memory devices with excellent temperature stability
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Includes: Supplementary data
Journal Articles

The effects and mechanisms of 2 MeV proton irradiation on InP-based high electron mobility transistors

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Jia-Lin Zhang, Peng Ding, Bo Mei, Sheng-Hao Meng, Chen Zhang, Liu-Hong Ma, Zhi Jin, Yi Sun, Hai-Ming Zhang, Ying-Hui Zhong
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 103501 (2022)
https://doi.org/10.1063/5.0084257
Published: March 2022
View articletitled, The effects and mechanisms of 2 MeV proton irradiation on InP-based high electron mobility transistors
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Journal Articles

Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs

Open Access
Ethan S. Lee, Jungwoo Joh, Dong Seup Lee, Jesús A. del Alamo
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 082104 (2022)
https://doi.org/10.1063/5.0084123
Published: February 2022
View articletitled, Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs
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Journal Articles

Simulation-based study of single-event burnout in 4H-SiC high-voltage vertical superjunction DMOSFET: Physical failure mechanism and robustness vs performance tradeoffs

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Joseph A. McPherson, Andrew A. Woodworth, T. Paul Chow, Wei Ji
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 043501 (2022)
https://doi.org/10.1063/5.0076740
Published: January 2022
View articletitled, Simulation-based study of single-event burnout in 4H-SiC high-voltage vertical superjunction DMOSFET: Physical failure mechanism and robustness vs performance tradeoffs
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Journal Articles

Improved Al2O3 RRAM performance based on SiO2/MoS2 quantum dots hybrid structure

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Yiru Niu, Xinna Yu, Xinyuan Dong, Diyuan Zheng, Shuai Liu, Zhikai Gan, Ke Chang, Binbin Liu, Kang'an Jiang, Yizhen Li, Hui Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 022106 (2022)
https://doi.org/10.1063/5.0070400
Published: January 2022
View articletitled, Improved Al2O3 RRAM performance based on SiO2/MoS2 quantum dots hybrid structure
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Includes: Supplementary data
Journal Articles

Over 1.8 GW/cm2 beveled-mesa NiO/β-Ga2O3 heterojunction diode with 800 V/10 A nanosecond switching capability

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F. Zhou, H. H. Gong, Z. P. Wang, W. Z. Xu, X. X. Yu, Y. Yang, F.-F. Ren, S. L. Gu, R. Zhang, Y. D. Zheng, H. Lu, J. D. Ye
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 262103 (2021)
https://doi.org/10.1063/5.0071280
Published: December 2021
View articletitled, Over 1.8 GW/cm2 beveled-mesa NiO/β-Ga2O3 heterojunction diode with 800 V/10 A nanosecond switching capability
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Journal Articles

Fast and efficient germanium quantum dot photodetector with an ultrathin active layer

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S. Shi, D. Pacifici, A. Zaslavsky
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 221108 (2021)
https://doi.org/10.1063/5.0073355
Published: December 2021
View articletitled, Fast and efficient germanium quantum dot photodetector with an ultrathin active layer
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Journal Articles

Achieving stable fiber coupling of quantum dot telecom C-band single-photons to an SOI photonic device

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Stephanie Bauer, Dongze Wang, Niklas Hoppe, Cornelius Nawrath, Julius Fischer, Norbert Witz, Mathias Kaschel, Christian Schweikert, Michael Jetter, Simone L. Portalupi, Manfred Berroth, Peter Michler
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 211101 (2021)
https://doi.org/10.1063/5.0067749
Published: November 2021
View articletitled, Achieving stable fiber coupling of quantum dot telecom C-band single-photons to an SOI photonic device
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