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Journal Articles

Radiative thermal coats for passive temperature management

Yongdi Dang, Yi Zhou, Yuxuan Li, Sen Zhang, Xinran Li, Yi Jin, Pankaj K. Choudhury, Jianbin Xu, Yungui Ma

Appl. Phys. Lett. 123, 222201 (2023)

https://doi.org/10.1063/5.0180035

Published: November 2023

View article titled, Radiative thermal coats for passive temperature management

Journal Articles

Ionic–electronic dynamics in an electrochemical gate stack toward high-speed artificial synapses

Or Levit, Emanuel Ber, Mor M. Dahan, Yair Keller, Eilam Yalon

Appl. Phys. Lett. 123, 213503 (2023)

https://doi.org/10.1063/5.0169127

Published: November 2023

View article titled, Ionic–electronic dynamics in an electrochemical gate stack toward high-speed artificial synapses

Journal Articles

Memristors with tunable characteristics based on the tellurene/Nb-doped MoS₂ heterojunction toward bio-realistic synaptic emulation

Xiangyu Zeng, Liang Zhang, Jiaqi Peng, Qikai Ye, Boyang Ma, Hongsheng Xu, Yulu Liu, Nazifi Sani Shuaibu, Xiaozhi Wang, Yixiu Wang, Yan Liu, Yue Hao, Genquan Han

Appl. Phys. Lett. 123, 173503 (2023)

https://doi.org/10.1063/5.0170984

Published: October 2023

View article titled, Memristors with tunable characteristics based on the tellurene/Nb-doped MoS2 heterojunction toward bio-realistic synaptic emulation

Includes: Supplementary data

Journal Articles

Electrostatic aid-free photo-floating gate two dimensional MoS₂ synaptic transistors

Rui Wang, Yurong Jiang, Dan Mou, Suicai Zhang, Xueping Li, Yong Yan, Xiaohui Song, Congxin Xia

Appl. Phys. Lett. 123, 142108 (2023)

https://doi.org/10.1063/5.0166502

Published: October 2023

View article titled, Electrostatic aid-free photo-floating gate two dimensional MoS2 synaptic transistors

Includes: Supplementary data

Journal Articles

An organic electrochemical synaptic transistor array for neuromorphic computation of sound localization

Yunchao Xu, Zhonghui Deng, Chenxing Jin, Wanrong Liu, Xiaofang Shi, Jianhui Chang, Haoran Yu, Biao Liu, Jia Sun, Junliang Yang

Appl. Phys. Lett. 123, 133701 (2023)

https://doi.org/10.1063/5.0167865

Published: September 2023

View article titled, An organic electrochemical synaptic transistor array for neuromorphic computation of sound localization

Includes: Supplementary data

Journal Articles

All-solid integratable device of electric field control of magnetism based on hydrogen ion migration in La_1−xSr_xMnO₃

Weikang Liu, Xinyi Wu, Shuyun Wu, Xiangxiang Zhao, Tingting Miao, Ruiyue Chu, Bin Cui, Bin Cheng, Liang Liu, Jifan Hu

Appl. Phys. Lett. 123, 122407 (2023)

https://doi.org/10.1063/5.0165206

Published: September 2023

View article titled, All-solid integratable device of electric field control of magnetism based on hydrogen ion migration in La1−xSrxMnO3

Includes: Supplementary data

Journal Articles

An energy efficient reservoir computing system based on HZO memcapacitive devices

Pan Zhang, Xinrui Ma, Yulong Dong, Zhixin Wu, Danyang Chen, Tianning Cui, Jingquan Liu, Gang Liu, Xiuyan Li

Appl. Phys. Lett. 123, 122104 (2023)

https://doi.org/10.1063/5.0164762

Published: September 2023

View article titled, An energy efficient reservoir computing system based on HZO memcapacitive devices

Journal Articles

Development of Sb₂Se₃ alloys by Ti-doping with ultralow resistance drift and improved microstructure for nonvolatile memory applications

Tong Wu, Guoxiang Wang, Andriy Lotnyk, Jinyi Zhu, Yucheng Jiao, Xiang Shen

Appl. Phys. Lett. 123, 073102 (2023)

https://doi.org/10.1063/5.0160884

Published: August 2023

View article titled, Development of Sb2Se3 alloys by Ti-doping with ultralow resistance drift and improved microstructure for nonvolatile memory applications

Includes: Supplementary data

Journal Articles

High emissive contrast of adaptive, thin-film, tungsten-doped VO₂ composites

G. M. Hunt, J. A. Miragliotta, J. Ginn, A. P. Warren, D. B. Shrekenhamer

Appl. Phys. Lett. 123, 071103 (2023)

https://doi.org/10.1063/5.0164936

Published: August 2023

View article titled, High emissive contrast of adaptive, thin-film, tungsten-doped VO2 composites

Includes: Supplementary data

Journal Articles

Voltage-controlled magnetic anisotropy based physical unclonable function

Andrea Meo, Esteban Garzón, Raffaele De Rose, Giovanni Finocchio, Marco Lanuzza, Mario Carpentieri

Appl. Phys. Lett. 123, 062405 (2023)

https://doi.org/10.1063/5.0166164

Published: August 2023

View article titled, Voltage-controlled magnetic anisotropy based physical unclonable function

Journal Articles

Performance comparison of refrigerators integrated with superhydrophobic and superhydrophilic freezer evaporators

Dalia Ghaddar, Kalyan Boyina, Kaushik Chettiar, Muhammad Jahidul Hoque, Matthew Baker, Pushkar Bhalerao, Scot Reagen, Nenad Miljkovic

Appl. Phys. Lett. 123, 051602 (2023)

https://doi.org/10.1063/5.0157647

Published: August 2023

View article titled, Performance comparison of refrigerators integrated with superhydrophobic and superhydrophilic freezer evaporators

Includes: Supplementary data

Journal Articles

A high-speed and power-efficient gradient-pulse injection method for spin-transfer torque magnetic random-access memory

Lin Sun, Lei Guo, Guocai Wang, Hua Su, Bo Liu, Xiaoli Tang

Appl. Phys. Lett. 123, 033502 (2023)

https://doi.org/10.1063/5.0153972

Published: July 2023

View article titled, A high-speed and power-efficient gradient-pulse injection method for spin-transfer torque magnetic random-access memory

Journal Articles

Enhanced synaptic performances in SrIrO₃ thin films by a ferroelectric layer

Xinxiu Wu, Zeyang Li, Xiao Yi, Caihong Jia, Weifeng Zhang

Appl. Phys. Lett. 123, 012104 (2023)

https://doi.org/10.1063/5.0149837

Published: July 2023

View article titled, Enhanced synaptic performances in SrIrO3 thin films by a ferroelectric layer

Journal Articles

A WSe₂/ β -Ga₂O₃ 2D/3D heterojunction for self-powered solar-blind communication

Xin Zhou, Zhang Jinzhong (张金中), Shang Liyan (商丽燕), Li Yawei (李亚巍), Zhu Liangqing (朱亮清), Chu Junhao (褚君浩), Hu Zhigao (胡志高)

Appl. Phys. Lett. 122, 263509 (2023)

https://doi.org/10.1063/5.0145228

Published: June 2023

View article titled, A WSe2/ β -Ga2O3 2D/3D heterojunction for self-powered solar-blind communication

Journal Articles

Field-free spin–orbit devices via heavy-metal alloy with opposite spin Hall angles for in-memory computing

Xiukai Lan, Xiangyu Liu, Zelalem Abebe Bekele, Kun Lei, Kaiyou Wang

Appl. Phys. Lett. 122, 172402 (2023)

https://doi.org/10.1063/5.0145497

Published: April 2023

View article titled, Field-free spin–orbit devices via heavy-metal alloy with opposite spin Hall angles for in-memory computing

Includes: Supplementary data

Journal Articles

Solution-processed small-molecular organic memristor with a very low resistive switching set voltage of 0.38 V

Xuemiao Wen, Wenwei Tang, Zhenkun Lin, Xiaobin Peng, Zhenfang Tang, Lintao Hou

Appl. Phys. Lett. 122, 173301 (2023)

https://doi.org/10.1063/5.0147149

Published: April 2023

View article titled, Solution-processed small-molecular organic memristor with a very low resistive switching set voltage of 0.38 V

Includes: Supplementary data

Journal Articles

Superconductor digital circuits with π junctions alone

Feng Li, Yuto Takeshita, Masamitsu Tanaka, Akira Fujimaki

Appl. Phys. Lett. 122, 162601 (2023)

https://doi.org/10.1063/5.0144604

Published: April 2023

View article titled, Superconductor digital circuits with π junctions alone

Journal Articles

CMOS-based area-and-power-efficient neuron and synapse circuits for time-domain analog spiking neural networks

Xiangyu Chen, Zolboo Byambadorj, Takeaki Yajima, Hisashi Inoue, Isao H. Inoue, Tetsuya Iizuka

Appl. Phys. Lett. 122, 074102 (2023)

https://doi.org/10.1063/5.0136627

Published: February 2023

View article titled, CMOS-based area-and-power-efficient neuron and synapse circuits for time-domain analog spiking neural networks

Journal Articles

Amorphous indium–gallium–zinc–oxide memristor arrays for parallel true random number generators

Huiwu Mao, Yixin Zhu, Ying Zhu, Baocheng Peng, Chunsheng Chen, Li Zhu, Shuo Ke, Xiangjing Wang, Changjin Wan, Qing Wan

Appl. Phys. Lett. 122, 053503 (2023)

https://doi.org/10.1063/5.0131981

Published: February 2023

View article titled, Amorphous indium–gallium–zinc–oxide memristor arrays for parallel true random number generators

Journal Articles

Realization of the skyrmionic logic gates and diodes in the same racetrack with enhanced and modified edges

Yun Shu, Qianrui Li, Jing Xia, Ping Lai, Zhipeng Hou, Yonghong Zhao, Degang Zhang, Yan Zhou, Xiaoxi Liu, Guoping Zhao

Appl. Phys. Lett. 121, 042402 (2022)

https://doi.org/10.1063/5.0097152

Published: July 2022

View article titled, Realization of the skyrmionic logic gates and diodes in the same racetrack with enhanced and modified edges

Includes: Supplementary data

NARROW

Topics

Radiative thermal coats for passive temperature management

Ionic–electronic dynamics in an electrochemical gate stack toward high-speed artificial synapses

Memristors with tunable characteristics based on the tellurene/Nb-doped MoS₂ heterojunction toward bio-realistic synaptic emulation

Electrostatic aid-free photo-floating gate two dimensional MoS₂ synaptic transistors

An organic electrochemical synaptic transistor array for neuromorphic computation of sound localization

All-solid integratable device of electric field control of magnetism based on hydrogen ion migration in La_1−xSr_xMnO₃

An energy efficient reservoir computing system based on HZO memcapacitive devices

Development of Sb₂Se₃ alloys by Ti-doping with ultralow resistance drift and improved microstructure for nonvolatile memory applications

High emissive contrast of adaptive, thin-film, tungsten-doped VO₂ composites

Voltage-controlled magnetic anisotropy based physical unclonable function

Performance comparison of refrigerators integrated with superhydrophobic and superhydrophilic freezer evaporators

A high-speed and power-efficient gradient-pulse injection method for spin-transfer torque magnetic random-access memory

Enhanced synaptic performances in SrIrO₃ thin films by a ferroelectric layer

A WSe₂/ β -Ga₂O₃ 2D/3D heterojunction for self-powered solar-blind communication

Field-free spin–orbit devices via heavy-metal alloy with opposite spin Hall angles for in-memory computing

Solution-processed small-molecular organic memristor with a very low resistive switching set voltage of 0.38 V

Superconductor digital circuits with π junctions alone

CMOS-based area-and-power-efficient neuron and synapse circuits for time-domain analog spiking neural networks

Amorphous indium–gallium–zinc–oxide memristor arrays for parallel true random number generators

Realization of the skyrmionic logic gates and diodes in the same racetrack with enhanced and modified edges

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