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Journal Articles

Concept for a fractional energy barrier tunneling junction

Yicong Chen, Dong-Keun Ki, Zhibing Li, Jun Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 243503 (2023)
https://doi.org/10.1063/5.0177160
Published: December 2023
View article titled, Concept for a fractional energy barrier tunneling junction
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Includes: Supplementary data
Journal Articles

Temperature and field dependencies of current leakage mechanisms in IrOx contacts on InAlN/GaN heterostructures

Savannah R. Eisner, Debbie G. Senesky
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 152101 (2023)
https://doi.org/10.1063/5.0171204
Published: October 2023
View article titled, Temperature and field dependencies of current leakage mechanisms in IrO<sub>x</sub> contacts on InAlN/GaN heterostructures
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Journal Articles

Lateral nanoscale field emission comb for frequency mixing

L. B. De Rose, W. M. Jones, A. Scherer
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 013505 (2023)
https://doi.org/10.1063/5.0150034
Published: July 2023
View article titled, Lateral nanoscale field emission comb for frequency mixing
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Journal Articles

Implementation of habituation on single ferroelectric memristor

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Xinyu Li, Guangyuan Li, Zhihang Zhang, Wenjing Zhai, Wenhao Zheng, Liufang Chen, Lin Lin, Xiaohui Zhou, Zhibo Yan, J.-M. Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 183505 (2023)
https://doi.org/10.1063/5.0141710
Published: May 2023
View article titled, Implementation of habituation on single ferroelectric memristor
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Includes: Supplementary data
Journal Articles

Surface plasmon-mediated enhanced field electron emission based on metasurfaces with a nano-gap driven by LEDs

Jing Zhao, Jianlong Liu, Ruirui Jiang, Kaiqiang Yang, Baoqing Zeng
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 171704 (2023)
https://doi.org/10.1063/5.0140643
Published: April 2023
View article titled, Surface plasmon-mediated enhanced field electron emission based on metasurfaces with a nano-gap driven by LEDs
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Journal Articles

Spin filtering effect in intrinsic 2D magnetic semiconductor Cr2Ge2Te6

Honglei Feng, Gang Shi, Dayu Yan, Yong Li, Youguo Shi, Yang Xu, Peng Xiong, Yongqing Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 142402 (2022)
https://doi.org/10.1063/5.0102745
Published: October 2022
View article titled, Spin filtering effect in intrinsic 2D magnetic semiconductor Cr<sub>2</sub>Ge<sub>2</sub>Te<sub>6</sub>
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Includes: Supplementary data
Journal Articles

Integrated sub-micron vacuum gaps in semiconductor devices

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Peter Oles, Alexander Breymesser, Oliver Blank, Peter Hadley
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 062107 (2022)
https://doi.org/10.1063/5.0097043
Published: August 2022
View article titled, Integrated sub-micron vacuum gaps in semiconductor devices
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Journal Articles

Conduction mechanisms of ferroelectric La:HfO2 ultrathin films

Zhiyu Xu, Lingzhi Lu, Jibo Xu, Weijie Zheng, Yahui Yu, Chunyan Ding, Shirui Wang, Feng Chen, Mingyang Tang, Chaojing Lu, Zheng Wen
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 133504 (2022)
https://doi.org/10.1063/5.0083911
Published: March 2022
View article titled, Conduction mechanisms of ferroelectric La:HfO<sub>2</sub> ultrathin films
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Includes: Supplementary data
Journal Articles

Work function of van der Waals topological semimetals: Experiment and theory

Bubunu Biswal, Shashi B. Mishra, Renu Yadav, Saroj Poudyal, Ramesh Rajarapu, Prahalad Kanti Barman, Khade Ramdas Pandurang, Manasi Mandal, Ravi Prakash Singh, B. R. K. Nanda, Abhishek Misra
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 093101 (2022)
https://doi.org/10.1063/5.0079032
Published: March 2022
View article titled, Work function of van der Waals topological semimetals: Experiment and theory
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Includes: Supplementary data
Journal Articles

Ultrafast electron dynamics in platinum and gold thin films driven by optical and terahertz fields

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V. Unikandanunni, F. Rigoni, M. C. Hoffmann, P. Vavassori, S. Urazhdin, S. Bonetti
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 021601 (2022)
https://doi.org/10.1063/5.0068086
Published: January 2022
View article titled, Ultrafast electron dynamics in platinum and gold thin films driven by optical and terahertz fields
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Includes: Supplementary data
Journal Articles

High performance WSe2 p-MOSFET with intrinsic n-channel based on back-to-back p–n junctions

Xiaochi Liu, Yuchuan Pan, Junqiang Yang, Deshun Qu, Huamin Li, Won Jong Yoo, Jian Sun
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 233101 (2021)
https://doi.org/10.1063/5.0036343
Published: June 2021
View article titled, High performance WSe<sub>2</sub> p-MOSFET with intrinsic n-channel based on back-to-back p–n junctions
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Includes: Supplementary data
Journal Articles

Electroresistance effect in MoS2-Hf0.5Zr0.5O2 heterojunctions

P. Chaudhary, P. Buragohain, M. Kozodaev, S. Zarubin, V. Mikheev, A. Chouprik, A. Lipatov, A. Sinitskii, A. Zenkevich, A. Gruverman
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 083106 (2021)
https://doi.org/10.1063/5.0035306
Published: February 2021
View article titled, Electroresistance effect in MoS<sub>2</sub>-Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> heterojunctions
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Journal Articles

AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric

Tsung-Han Yang, Jesse Brown, Kai Fu, Jingan Zhou, Kevin Hatch, Chen Yang, Jossue Montes, Xin Qi, Houqiang Fu, Robert J. Nemanich, Yuji Zhao
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 072102 (2021)
https://doi.org/10.1063/5.0027885
Published: February 2021
View article titled, AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric
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Journal Articles

Characterization and analysis of low-temperature time-to-failure behavior in forward-biased Schottky-type p-GaN gate HEMTs

Jiabei He, Jin Wei, Yang Li, Zheyang Zheng, Song Yang, Baoling Huang, Kevin J. Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 223502 (2020)
https://doi.org/10.1063/5.0007763
Published: June 2020
View article titled, Characterization and analysis of low-temperature time-to-failure behavior in forward-biased Schottky-type <em>p</em>-GaN gate HEMTs
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Journal Articles

Fowler–Nordheim tunneling-assisted enhancement of tunneling electroresistance effect through a composite barrier

Yihao Wang, Qi Zhang, Jinling Zhou, Jiaolian Liu, Zhijun Ma, Peng Zhou, Tianjin Zhang, Nagarajan Valanoor
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 202901 (2020)
https://doi.org/10.1063/5.0001770
Published: May 2020
View article titled, Fowler–Nordheim tunneling-assisted enhancement of tunneling electroresistance effect through a composite barrier
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Includes: Supplementary data
Journal Articles

Thickness-dependent charge transport in exfoliated indium selenide vertical field-effect transistors

Vinod K. Sangwan, Junmo Kang, Mark C. Hersam
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 243104 (2019)
https://doi.org/10.1063/1.5128808
Published: December 2019
View article titled, Thickness-dependent charge transport in exfoliated indium selenide vertical field-effect transistors
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Includes: Supplementary data
Journal Articles

Atmospheric operation of original electron emission device and generation of reactive species

Tadashi Iwamatsu, Ai Tsutsui, Hiroyuki Yamaji
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 053511 (2019)
https://doi.org/10.1063/1.5077062
Published: February 2019
View article titled, Atmospheric operation of original electron emission device and generation of reactive species
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Journal Articles

Half-volt operation of IGZO thin-film transistors enabled by ultrathin HfO2 gate dielectric

Pengfei Ma, Jiamin Sun, Guangda Liang, Yunpeng Li, Qian Xin, Yuxiang Li, Aimin Song
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 063501 (2018)
https://doi.org/10.1063/1.5037410
Published: August 2018
View article titled, Half-volt operation of IGZO thin-film transistors enabled by ultrathin HfO<sub>2</sub> gate dielectric
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Includes: Supplementary data
Journal Articles

Origin of temperature dependent conduction of current from n-4H-SiC into silicon dioxide films at high electric fields

An Xiang, Xingliang Xu, Lin Zhang, Zhiqiang Li, Juntao Li, Gang Dai
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 062101 (2018)
https://doi.org/10.1063/1.5006249
Published: February 2018
View article titled, Origin of temperature dependent conduction of current from n-4H-SiC into silicon dioxide films at high electric fields
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Journal Articles

Electrical characterization of ALD HfO2 high-k dielectrics on ( 2 ¯ 01) β-Ga2O3

David I. Shahin, Marko J. Tadjer, Virginia D. Wheeler, Andrew D. Koehler, Travis J. Anderson, Charles R. Eddy, Jr., Aris Christou
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 042107 (2018)
https://doi.org/10.1063/1.5006276
Published: January 2018
View article titled, Electrical characterization of ALD HfO<sub>2</sub> high-k dielectrics on ( 2 ¯ 01) β-Ga<sub>2</sub>O<sub>3</sub>
Open the PDF for Electrical characterization of ALD HfO<sub>2</sub> high-k dielectrics on ( 2 ¯ 01) β-Ga<sub>2</sub>O<sub>3</sub> in another window