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Journal Articles

Tuning of charge state and wavelength in InAs/GaAs quantum dots through p-i-p + -i-n heterostructure engineering

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Changkun Song, Jiawei Yang, Mujie Rao, Yingxin Chen, Ying Yu, Siyuan Yu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 171104 (2025)
https://doi.org/10.1063/5.0259814
Published: April 2025
View articletitled, Tuning of charge state and wavelength in InAs/GaAs quantum dots through p-i-p + -i-n heterostructure engineering
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Journal Articles

Hot electron spectroscopy for intrinsic Schottky barrier determination at metal–InGaZnO interfaces

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Yuan Kai, Jiawei Wang, Congyan Lu, Ling Li, Chao Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 143502 (2025)
https://doi.org/10.1063/5.0248175
Published: April 2025
View articletitled, Hot electron spectroscopy for intrinsic Schottky barrier determination at metal–InGaZnO interfaces
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Journal Articles

Design guidelines for Si metal–oxide–semiconductor and Si/SiGe heterostructure quantum dots for spin qubits

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Yu-Cheng Li, Che-Hao Chang, Yu-Jui Wu, Chen-Yao Liao, Jiun-Yun Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 063502 (2025)
https://doi.org/10.1063/5.0245929
Published: February 2025
View articletitled, Design guidelines for Si metal–oxide–semiconductor and Si/SiGe heterostructure quantum dots for spin qubits
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Journal Articles

Tunneling photo-thermoelectric effect in monolayer graphene/bilayer hexagonal boron nitride/bilayer graphene asymmetric van der Waals tunnel junctions

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Sabin Park, Rai Moriya, Yijin Zhang, Kenji Watanabe, Takashi Taniguchi, Tomoki Machida
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 053101 (2025)
https://doi.org/10.1063/5.0242170
Published: February 2025
View articletitled, Tunneling photo-thermoelectric effect in monolayer graphene/bilayer hexagonal boron nitride/bilayer graphene asymmetric van der Waals tunnel junctions
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Journal Articles

The field emission characteristics under transient electric field

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Yue Wu, Jian-cang Su, Jia-ru Shi, Xu-dong Qiu, Hao-ran Zhang, Rui Li, Liang Zhao, Jie Cheng, Wen-long Yan, Bin-xiong Yu
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 254101 (2024)
https://doi.org/10.1063/5.0239588
Published: December 2024
View articletitled, The field emission characteristics under transient electric field
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Journal Articles

Rotation-invariant image recognition using interconnected floating-gate phototransistor

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Xuan Pan, Jingwen Shi, Wentao Yu, Yichen Zhao, Yuekun Yang, Bin Cheng, Shi-Jun Liang, Feng Miao
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 133103 (2024)
https://doi.org/10.1063/5.0234566
Published: September 2024
View articletitled, Rotation-invariant image recognition using interconnected floating-gate phototransistor
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Journal Articles

Localized surface plasmon-enhanced nanorod micro-LEDs with Ag nanoparticles embedded in insulating and planarizing spin-on glass

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Aoqi Fang, Jixin Liu, Zaifa Du, Penghao Tang, Yiyang Xie, Weiling Guo, Hao Xu, Jie Sun
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 021102 (2024)
https://doi.org/10.1063/5.0211870
Published: July 2024
View articletitled, Localized surface plasmon-enhanced nanorod micro-LEDs with Ag nanoparticles embedded in insulating and planarizing spin-on glass
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Journal Articles

Voltage tunable sign inversion of magnetoresistance in van der Waals Fe3GeTe2/MoSe2/Fe3GeTe2 tunnel junctions

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Shouguo Zhu, Hailong Lin, Wenkai Zhu, Weihao Li, Jing Zhang, Kaiyou Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 222401 (2024)
https://doi.org/10.1063/5.0202525
Published: May 2024
View articletitled, Voltage tunable sign inversion of magnetoresistance in van der Waals Fe3GeTe2/MoSe2/Fe3GeTe2 tunnel junctions
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Includes: Supplementary data
Journal Articles

Realization of single MoTe2 crystal in-plane TFET by laser-induced doping technique

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Tianshun Xie, Mengnan Ke, Keiji Ueno, Kenji Watanabe, Takashi Taniguchi, Nobuyuki Aoki
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 211904 (2024)
https://doi.org/10.1063/5.0197172
Published: May 2024
View articletitled, Realization of single MoTe2 crystal in-plane TFET by laser-induced doping technique
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Journal Articles

InGaAs/Si PIN photodetector with low interfacial recombination rates realized by wafer bonding with a polycrystalline Si interlayer

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Jinlong Jiao, Ruoyun Ji, Liqiang Yao, Yingjie Rao, Shaoying Ke, Jianfang Xu, Yibo Zeng, Cheng Li, Guangyang Lin, Wei Huang, Songyan Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 121101 (2024)
https://doi.org/10.1063/5.0192394
Published: March 2024
View articletitled, InGaAs/Si PIN photodetector with low interfacial recombination rates realized by wafer bonding with a polycrystalline Si interlayer
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Journal Articles

The interplay between electron tunneling and Auger emission in a single quantum emitter weakly coupled to an electron reservoir

Open Access
M. Zöllner, H. Mannel, F. Rimek, B. Maib, N. Schwarz, A. D. Wieck, A. Ludwig, A. Lorke, M. Geller
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 023102 (2024)
https://doi.org/10.1063/5.0183821
Published: January 2024
View articletitled, The interplay between electron tunneling and Auger emission in a single quantum emitter weakly coupled to an electron reservoir
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Includes: Supplementary data
Journal Articles

Concept for a fractional energy barrier tunneling junction

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Yicong Chen, Dong-Keun Ki, Zhibing Li, Jun Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 243503 (2023)
https://doi.org/10.1063/5.0177160
Published: December 2023
View articletitled, Concept for a fractional energy barrier tunneling junction
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Includes: Supplementary data
Journal Articles

Deep trap assisting elastico-mechanoluminescence in diphase non-piezoelectrics induced by tunneling effect

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Yin Li, Zishuo Li, Hailing Sun, K. W. Kwok, Guofu Zhou
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 192902 (2023)
https://doi.org/10.1063/5.0170880
Published: November 2023
View articletitled, Deep trap assisting elastico-mechanoluminescence in diphase non-piezoelectrics induced by tunneling effect
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Includes: Supplementary data
Journal Articles

Describing the analog resistance change of HfOx-based neuromorphic synapses using a compact series trap-assisted tunneling and Ohmic conduction model

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Fabia F. Athena, Eric M. Vogel
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 163506 (2023)
https://doi.org/10.1063/5.0163566
Published: October 2023
View articletitled, Describing the analog resistance change of HfOx-based neuromorphic synapses using a compact series trap-assisted tunneling and Ohmic conduction model
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Includes: Supplementary data
Journal Articles

Temperature and field dependencies of current leakage mechanisms in IrOx contacts on InAlN/GaN heterostructures

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Savannah R. Eisner, Debbie G. Senesky
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 152101 (2023)
https://doi.org/10.1063/5.0171204
Published: October 2023
View articletitled, Temperature and field dependencies of current leakage mechanisms in IrOx contacts on InAlN/GaN heterostructures
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Journal Articles

Gate leakage modeling in lateral β -Ga2O3 MOSFETs with Al2O3 gate dielectric

Open Access
Manuel Fregolent, Enrico Brusaterra, Carlo De Santi, Kornelius Tetzner, Joachim Würfl, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 103504 (2023)
https://doi.org/10.1063/5.0154878
Published: September 2023
View articletitled, Gate leakage modeling in lateral β -Ga2O3 MOSFETs with Al2O3 gate dielectric
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Includes: Supplementary data
Journal Articles

Lateral nanoscale field emission comb for frequency mixing

Open Access
L. B. De Rose, W. M. Jones, A. Scherer
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 013505 (2023)
https://doi.org/10.1063/5.0150034
Published: July 2023
View articletitled, Lateral nanoscale field emission comb for frequency mixing
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Journal Articles

Competing mechanisms of local photoluminescence quenching and enhancement in the quantum tunneling regime at 2D TMDC/hBN/plasmonic interfaces

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Yang Pan, Lu He, Ilya Milekhin, Alexander G. Milekhin, Dietrich R. T. Zahn
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 233106 (2023)
https://doi.org/10.1063/5.0152050
Published: June 2023
View articletitled, Competing mechanisms of local photoluminescence quenching and enhancement in the quantum tunneling regime at 2D TMDC/hBN/plasmonic interfaces
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Includes: Supplementary data
Journal Articles

Modeling electronic conduction in quantum dot constituted assemblies coupled to metallic electrodes

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K. Eshraghi, S. Natani, P. R. Bandaru
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 233104 (2023)
https://doi.org/10.1063/5.0159278
Published: June 2023
View articletitled, Modeling electronic conduction in quantum dot constituted assemblies coupled to metallic electrodes
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Journal Articles

Implementation of habituation on single ferroelectric memristor

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Xinyu Li, Guangyuan Li, Zhihang Zhang, Wenjing Zhai, Wenhao Zheng, Liufang Chen, Lin Lin, Xiaohui Zhou, Zhibo Yan, J.-M. Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 183505 (2023)
https://doi.org/10.1063/5.0141710
Published: May 2023
View articletitled, Implementation of habituation on single ferroelectric memristor
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Includes: Supplementary data