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Journal Articles

Strong contact resistance effects on vertical carrier density profile and surface trap density in WSe₂ multilayers

Dahyun Choi, Minji Chae, Yeongseo Han, Min-Kyu Joo

Appl. Phys. Lett. 124, 093504 (2024)

https://doi.org/10.1063/5.0176208

Published: February 2024

View article titled, Strong contact resistance effects on vertical carrier density profile and surface trap density in WSe2 multilayers

Includes: Supplementary data

Journal Articles

Universality of trap-induced mobility fluctuations between 1/f noise and random telegraph noise in nanoscale FD-SOI MOSFETs

Owen Gauthier, Sébastien Haendler, Quentin Rafhay, Christoforos Theodorou

Appl. Phys. Lett. 122, 233503 (2023)

https://doi.org/10.1063/5.0152734

Published: June 2023

View article titled, Universality of trap-induced mobility fluctuations between 1/f noise and random telegraph noise in nanoscale FD-SOI MOSFETs

Journal Articles

Interface traps, correlated mobility fluctuations, and low-frequency noise in metal–oxide–semiconductor transistors

D. M. Fleetwood

Appl. Phys. Lett. 122, 173504 (2023)

https://doi.org/10.1063/5.0146549

Published: April 2023

View article titled, Interface traps, correlated mobility fluctuations, and low-frequency noise in metal–oxide–semiconductor transistors

Journal Articles

Geometrical magnetoresistance effect and mobility in graphene field-effect transistors

Isabel Harrysson Rodrigues, Andrey Generalov, Anamul Md Hoque, Miika Soikkeli, Anton Murros, Sanna Arpiainen, Andrei Vorobiev

Appl. Phys. Lett. 121, 013502 (2022)

https://doi.org/10.1063/5.0088564

Published: July 2022

View article titled, Geometrical magnetoresistance effect and mobility in graphene field-effect transistors

Includes: Supplementary data

Journal Articles

Surface transfer doping of MoO₃ on hydrogen terminated diamond with an Al₂O₃ interfacial layer

Yu Yang, Franz A. Koeck, Xingye Wang, Robert J. Nemanich

Appl. Phys. Lett. 120, 191602 (2022)

https://doi.org/10.1063/5.0083971

Published: May 2022

View article titled, Surface transfer doping of MoO3 on hydrogen terminated diamond with an Al2O3 interfacial layer

Journal Articles

High electron mobility and low noise quantum point contacts in an ultra-shallow all-epitaxial metal gate GaAs/Al_xGa_1−xAs heterostructure

Y. Ashlea Alava, D. Q. Wang, C. Chen, D. A. Ritchie, O. Klochan, A. R. Hamilton

Appl. Phys. Lett. 119, 063105 (2021)

https://doi.org/10.1063/5.0053816

Published: August 2021

View article titled, High electron mobility and low noise quantum point contacts in an ultra-shallow all-epitaxial metal gate GaAs/AlxGa1−xAs heterostructure

Journal Articles

Electron mobility in monolayer WS₂ encapsulated in hexagonal boron-nitride

Y. Wang, T. Sohier, K. Watanabe, T. Taniguchi, M. J. Verstraete, E. Tutuc

Appl. Phys. Lett. 118, 102105 (2021)

https://doi.org/10.1063/5.0039766

Published: March 2021

View article titled, Electron mobility in monolayer WS2 encapsulated in hexagonal boron-nitride

Journal Articles

Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al₂O₃/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces

Yuto Ando, Kentaro Nagamatsu, Manato Deki, Noriyuki Taoka, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, Tohru Nakamura, Hiroshi Amano

Appl. Phys. Lett. 117, 242104 (2020)

https://doi.org/10.1063/5.0028516

Published: December 2020

View article titled, Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces

Journal Articles

Difference in electron mobility at 4H–SiC/SiO₂ interfaces with various crystal faces originating from effective-field-dependent scattering

Hirohisa Hirai, Tetsuo Hatakeyama, Mitsuru Sometani, Mitsuo Okamoto, Shinsuke Harada, Hajime Okumura, Hiroshi Yamaguchi

Appl. Phys. Lett. 117, 042101 (2020)

https://doi.org/10.1063/5.0012324

Published: July 2020

View article titled, Difference in electron mobility at 4H–SiC/SiO2 interfaces with various crystal faces originating from effective-field-dependent scattering

Journal Articles

Effect of interlayer tunneling barrier on carrier transport and fluctuation in multilayer ReS₂

Byung Chul Lee, Chul Min Kim, Soojin Kim, Gyu-Tae Kim, Min-Kyu Joo

Appl. Phys. Lett. 117, 033501 (2020)

https://doi.org/10.1063/5.0003041

Published: July 2020

View article titled, Effect of interlayer tunneling barrier on carrier transport and fluctuation in multilayer ReS2

Journal Articles

Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K

Mikaël Cassé, Bruna Cardoso Paz, Gérard Ghibaudo, Thierry Poiroux, Emmanuel Vincent, Philippe Galy, André Juge, Fred Gaillard, Silvano de Franceschi, Tristan Meunier, Maud Vinet

Appl. Phys. Lett. 116, 243502 (2020)

https://doi.org/10.1063/5.0007100

Published: June 2020

View article titled, Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K

Includes: Supplementary data

Journal Articles

A compact, high resolution energy, and emittance diagnostic for electron beams using active plasma lenses

S. K. Barber, J. H. Bin, A. J. Gonsalves, F. Isono, J. van Tilborg, S. Steinke, K. Nakamura, A. Zingale, N. A. Czapla, D. Schumacher, C. B. Schroeder, C. G. R. Geddes, W. P. Leemans, E. Esarey

Appl. Phys. Lett. 116, 234108 (2020)

https://doi.org/10.1063/5.0005114

Published: June 2020

View article titled, A compact, high resolution energy, and emittance diagnostic for electron beams using active plasma lenses

Journal Articles

Mobility-limiting Coulomb scattering in nitrided 4H-SiC inversion channel on 1 1 ¯ 00 m-face and 11 2 ¯ a-face characterized by Hall effect measurements

Hirohisa Hirai, Tetsuo Hatakeyama, Mitsuru Sometani, Mitsuo Okamoto, Shinsuke Harada, Hajime Okumura

Appl. Phys. Lett. 115, 132106 (2019)

https://doi.org/10.1063/1.5114669

Published: September 2019

View article titled, Mobility-limiting Coulomb scattering in nitrided 4H-SiC inversion channel on 1 1 ¯ 00 m-face and 11 2 ¯ a-face characterized by Hall effect measurements

Journal Articles

Ideal phonon-scattering-limited mobility in inversion channels of 4H-SiC(0001) MOSFETs with ultralow net doping concentrations

Mitsuru Sometani, Takuji Hosoi, Hirohisa Hirai, Tetsuo Hatakeyama, Shinsuke Harada, Hiroshi Yano, Takayoshi Shimura, Heiji Watanabe, Yoshiyuki Yonezawa, Hajime Okumura

Appl. Phys. Lett. 115, 132102 (2019)

https://doi.org/10.1063/1.5115304

Published: September 2019

View article titled, Ideal phonon-scattering-limited mobility in inversion channels of 4H-SiC(0001) MOSFETs with ultralow net doping concentrations

Journal Articles

Inversion channel mobility and interface state density of diamond MOSFET using N-type body with various phosphorus concentrations

Tsubasa Matsumoto, Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi, Satoshi Yamasaki, Takao Inokuma, Norio Tokuda

Appl. Phys. Lett. 114, 242101 (2019)

https://doi.org/10.1063/1.5100328

Published: June 2019

View article titled, Inversion channel mobility and interface state density of diamond MOSFET using N-type body with various phosphorus concentrations

Journal Articles

Characterization of bulk traps and interface states in AlGaN/GaN heterostructure under proton irradiation

Xue-Feng Zheng, Shuai-Shuai Dong, Peng Ji, Chong Wang, Yun-Long He, Ling Lv, Xiao-Hua Ma, Yue Hao

Appl. Phys. Lett. 112, 233504 (2018)

https://doi.org/10.1063/1.5024645

Published: June 2018

View article titled, Characterization of bulk traps and interface states in AlGaN/GaN heterostructure under proton irradiation

Journal Articles

Feasibility of track-based multiple scattering tomography

H. Jansen, P. Schütze

Appl. Phys. Lett. 112, 144101 (2018)

https://doi.org/10.1063/1.5005503

Published: April 2018

View article titled, Feasibility of track-based multiple scattering tomography

Journal Articles

Thickness-dependent carrier mobility of ambipolar MoTe₂: Interplay between interface trap and Coulomb scattering

Hyunjin Ji, Gwanmu Lee, Min-Kyu Joo, Yoojoo Yun, Hojoon Yi, Ji-Hoon Park, Dongseok Suh, Seong Chu Lim

Appl. Phys. Lett. 110, 183501 (2017)

https://doi.org/10.1063/1.4982680

Published: May 2017

View article titled, Thickness-dependent carrier mobility of ambipolar MoTe2: Interplay between interface trap and Coulomb scattering

Journal Articles

Photoconductivity of InN grown by MOVPE: Low temperature and weak light illumination

Ting-Ting Kang, Yuhui Zhang, Ping-Ping Chen, ZhiHai Wang, Akio Yamamoto

Appl. Phys. Lett. 110, 042104 (2017)

https://doi.org/10.1063/1.4974999

Published: January 2017

View article titled, Photoconductivity of InN grown by MOVPE: Low temperature and weak light illumination

Includes: Supplementary data

Journal Articles

Electronic properties of monolayer tungsten disulfide grown by chemical vapor deposition

Abdullah Alharbi, Davood Shahrjerdi

Appl. Phys. Lett. 109, 193502 (2016)

https://doi.org/10.1063/1.4967188

Published: November 2016

View article titled, Electronic properties of monolayer tungsten disulfide grown by chemical vapor deposition

Includes: Supplementary data

NARROW

Topics

Strong contact resistance effects on vertical carrier density profile and surface trap density in WSe₂ multilayers

Universality of trap-induced mobility fluctuations between 1/f noise and random telegraph noise in nanoscale FD-SOI MOSFETs

Interface traps, correlated mobility fluctuations, and low-frequency noise in metal–oxide–semiconductor transistors

Geometrical magnetoresistance effect and mobility in graphene field-effect transistors

Surface transfer doping of MoO₃ on hydrogen terminated diamond with an Al₂O₃ interfacial layer

High electron mobility and low noise quantum point contacts in an ultra-shallow all-epitaxial metal gate GaAs/Al_xGa_1−xAs heterostructure

Electron mobility in monolayer WS₂ encapsulated in hexagonal boron-nitride

Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al₂O₃/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces

Difference in electron mobility at 4H–SiC/SiO₂ interfaces with various crystal faces originating from effective-field-dependent scattering

Effect of interlayer tunneling barrier on carrier transport and fluctuation in multilayer ReS₂

Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K

A compact, high resolution energy, and emittance diagnostic for electron beams using active plasma lenses

Mobility-limiting Coulomb scattering in nitrided 4H-SiC inversion channel on 1 1 ¯ 00 m-face and 11 2 ¯ a-face characterized by Hall effect measurements

Ideal phonon-scattering-limited mobility in inversion channels of 4H-SiC(0001) MOSFETs with ultralow net doping concentrations

Inversion channel mobility and interface state density of diamond MOSFET using N-type body with various phosphorus concentrations

Characterization of bulk traps and interface states in AlGaN/GaN heterostructure under proton irradiation

Feasibility of track-based multiple scattering tomography

Thickness-dependent carrier mobility of ambipolar MoTe₂: Interplay between interface trap and Coulomb scattering

Photoconductivity of InN grown by MOVPE: Low temperature and weak light illumination

Electronic properties of monolayer tungsten disulfide grown by chemical vapor deposition

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