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Journal Articles

Band bending induced resonant tunneling in ferroelectric tunnel junctions

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Xingwen Zheng, Ying Yang, Qing Zhang, Jing Li, Xiaohui Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 132902 (2022)
https://doi.org/10.1063/5.0106693
Published: September 2022
View articletitled, Band bending induced resonant tunneling in ferroelectric tunnel junctions
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Journal Articles

Possible n/p-type conductivity of two-dimensional graphene oxide by boron and nitrogen doping: Evaluated via constrained excitation

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Dan Wang, Dong Han, Xian-Bin Li, Sheng-Yi Xie, Nian-Ke Chen, Wei Quan Tian, Shengbai Zhang, Hong-Bo Sun
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 203113 (2016)
https://doi.org/10.1063/1.4967981
Published: November 2016
View articletitled, Possible n/p-type conductivity of two-dimensional graphene oxide by boron and nitrogen doping: Evaluated via constrained excitation
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Includes: Supplementary data
Journal Articles

Effects of work function on thermal sensitivity of electrode potential

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Hyuck Lim, Yang Shi, Meng Wang, Yu Qiao
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 223901 (2015)
https://doi.org/10.1063/1.4921769
Published: June 2015
View articletitled, Effects of work function on thermal sensitivity of electrode potential
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Journal Articles

Epitaxial growth of the topological insulator Bi2Se3 on Si(111): Growth mode, lattice parameter, and strain state

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M. Vyshnepolsky, C. Klein, F. Klasing, A. Hanisch-Blicharski, M. Horn-von Hoegen
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 111909 (2013)
https://doi.org/10.1063/1.4821181
Published: September 2013
View articletitled, Epitaxial growth of the topological insulator Bi2Se3 on Si(111): Growth mode, lattice parameter, and strain state
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Journal Articles

Microscopic modeling of scattering quantum non-locality in semiconductor nanostructures

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Roberto Rosati, Fausto Rossi
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 113105 (2013)
https://doi.org/10.1063/1.4821158
Published: September 2013
View articletitled, Microscopic modeling of scattering quantum non-locality in semiconductor nanostructures
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Journal Articles

Interaction of surface and interface plasmons in extremely thin Al films on Si(111)

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Huajun Qin, Ying Jiang, Guanhua Zhang, Kehui Wu
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 051605 (2013)
https://doi.org/10.1063/1.4790289
Published: February 2013
View articletitled, Interaction of surface and interface plasmons in extremely thin Al films on Si(111)
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Journal Articles

Quantum mechanically guided design of transition metal doped SrCo0.875M0.125O3−δ (M = Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn)

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Bernd M. Linke, Denis Music, Jens Emmerlich, Jochen M. Schneider
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 231905 (2011)
https://doi.org/10.1063/1.3666032
Published: December 2011
View articletitled, Quantum mechanically guided design of transition metal doped SrCo0.875M0.125O3−δ (M = Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn)
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Journal Articles

Single-molecule refrigerators: Substitution and gate effects

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Yu-Shen Liu, Yu-Chang Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 213103 (2011)
https://doi.org/10.1063/1.3593379
Published: May 2011
View articletitled, Single-molecule refrigerators: Substitution and gate effects
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Journal Articles

Quantum magnetoresistance of the PrFeAsO oxypnictide

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D. Bhoi, P. Mandal, P. Choudhury, S. Pandya, V. Ganesan
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 172105 (2011)
https://doi.org/10.1063/1.3584023
Published: April 2011
View articletitled, Quantum magnetoresistance of the PrFeAsO oxypnictide
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Journal Articles

Interface defect-assisted single electron charging (and discharging) dynamics in Ge nanocrystals memories

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J. S. de Sousa, R. Peibst, G. A. Farias, J.-P. Leburton, K. R. Hofmann
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 013504 (2010)
https://doi.org/10.1063/1.3455899
Published: July 2010
View articletitled, Interface defect-assisted single electron charging (and discharging) dynamics in Ge nanocrystals memories
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Journal Articles

Comparison of drive currents in metal-oxide-semiconductor field-effect transistors made of Si, Ge, GaAs, InGaAs, and InAs channels

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Abigail Lubow, Sohrab Ismail-Beigi, T. P. Ma
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 122105 (2010)
https://doi.org/10.1063/1.3367708
Published: March 2010
View articletitled, Comparison of drive currents in metal-oxide-semiconductor field-effect transistors made of Si, Ge, GaAs, InGaAs, and InAs channels
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Journal Articles

Magnetic states of zigzag graphene nanoribbons from first principles

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Fang Wu, Erjun Kan, Hongjun Xiang, Su-Huai Wei, Myung-Hwan Whangbo, Jinlong Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 223105 (2009)
https://doi.org/10.1063/1.3147854
Published: June 2009
View articletitled, Magnetic states of zigzag graphene nanoribbons from first principles
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Journal Articles

Observation of plasmon line broadening in single gold nanorods

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Le Qiu, Timothy A. Larson, Danielle Smith, Edward Vitkin, Mark D. Modell, Brian A. Korgel, Konstantin V. Sokolov, Eugene B. Hanlon, Irving Itzkan, Lev T. Perelman
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 153106 (2008)
https://doi.org/10.1063/1.2995982
Published: October 2008
View articletitled, Observation of plasmon line broadening in single gold nanorods
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Journal Articles

Examining the terahertz signal from a photoexcited biased semiconductor superlattice for evidence of gain

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A. Lisauskas, M. M. Dignam, N. V. Demarina, E. Mohler, H. G. Roskos
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 021122 (2008)
https://doi.org/10.1063/1.2957040
Published: July 2008
View articletitled, Examining the terahertz signal from a photoexcited biased semiconductor superlattice for evidence of gain
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Journal Articles

Quantum-mechanical model for estimating the number ratio between different valence cations in multiatom compounds

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G. D. Tang, D. L. Hou, W. Chen, X. Zhao, W. H. Qi
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 144101 (2007)
https://doi.org/10.1063/1.2718507
Published: April 2007
View articletitled, Quantum-mechanical model for estimating the number ratio between different valence cations in multiatom compounds
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Journal Articles

Electrical properties of ultrathin HfO 2 films for replacement metal gate transistors, fabricated by atomic layer deposition using Hf ( N ( CH 3 ) ( C 2 H 5 ) ) 4 and O 3

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Satoshi Kamiyama, Takayoshi Miura, Yasuo Nara
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 132904 (2005)
https://doi.org/10.1063/1.2072827
Published: September 2005
View articletitled, Electrical properties of ultrathin HfO 2 films for replacement metal gate transistors, fabricated by atomic layer deposition using Hf ( N ( CH 3 ) ( C 2 H 5 ) ) 4 and O 3
Open the PDF for Electrical properties of ultrathin HfO 2 films for replacement metal gate transistors, fabricated by atomic layer deposition using Hf ( N ( CH 3 ) ( C 2 H 5 ) ) 4 and O 3 in another window
Journal Articles

Evidence of vectorial photoelectric effect on Copper

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E. Pedersoli, F. Banfi, B. Ressel, S. Pagliara, C. Giannetti, G. Galimberti, S. Lidia, J. Corlett, G. Ferrini, F. Parmigiani
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 081112 (2005)
https://doi.org/10.1063/1.2031949
Published: August 2005
View articletitled, Evidence of vectorial photoelectric effect on Copper
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Journal Articles

Intraband absorption in silicon nanocrystals: The combined effect of shape and crystal orientation

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J. S. de Sousa, J.-P. Leburton, V. N. Freire, E. F. da Silva, Jr.
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 031913 (2005)
https://doi.org/10.1063/1.2000336
Published: July 2005
View articletitled, Intraband absorption in silicon nanocrystals: The combined effect of shape and crystal orientation
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Journal Articles

Substitutional diatomic molecules NO, NC, CO, N 2 , and O 2 : Their vibrational frequencies and effects on p doping of ZnO

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Sukit Limpijumnong, Xiaonan Li, Su-Huai Wei, S. B. Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 211910 (2005)
https://doi.org/10.1063/1.1931823
Published: May 2005
View articletitled, Substitutional diatomic molecules NO, NC, CO, N 2 , and O 2 : Their vibrational frequencies and effects on p doping of ZnO
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Journal Articles

Room-temperature resonant tunneling of electrons in carbon nanotube junction quantum wells

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Sujit K. Biswas, Leo J. Schowalter, Yung Joon Jung, Aravind Vijayaraghavan, Pulickel M. Ajayan, Robert Vajtai
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 183101 (2005)
https://doi.org/10.1063/1.1915528
Published: April 2005
View articletitled, Room-temperature resonant tunneling of electrons in carbon nanotube junction quantum wells
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