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Journal Articles

Impact ionization coefficients and excess noise characteristics of Al0.85Ga0.15As0.07Sb0.93 on GaSb substrate

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N. Gajowski, M. Muduli, T. J. Ronningen, S. Krishna
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 122101 (2025)
https://doi.org/10.1063/5.0258106
Published: March 2025
View article titled, Impact ionization coefficients and excess noise characteristics of Al0.85Ga0.15As0.07Sb0.93 on GaSb substrate
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Journal Articles

Effects of temperature on surface plasmon resonance in organic thin-film transistor

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Qing He Wang, Yu Heng Deng, Yuan Xiao Ma, Lu Liu, Jing Ping Xu, P. T. Lai
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 011602 (2025)
https://doi.org/10.1063/5.0241847
Published: January 2025
View article titled, Effects of temperature on surface plasmon resonance in organic thin-film transistor
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Journal Articles

6 kV GaN p–n diode fabricated by hybrid epitaxial growth with regrowth interface treated by CF4 plasma

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Hiroshi Ohta, Yoshinobu Narita, Shota Kaneki, Toshio Kitamura, Fumimasa Horikiri, Hajime Fujikura, Shinichiro Takatani, Tomoyoshi Mishima
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 012101 (2025)
https://doi.org/10.1063/5.0242225
Published: January 2025
View article titled, 6 kV GaN p–n diode fabricated by hybrid epitaxial growth with regrowth interface treated by CF4 plasma
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Journal Articles

Electroabsorption in InGaAs and GaAsSb p-i-n photodiodes

Open Access
Y. Liu, X. Jin, H. Jung, S. Lee, F. Harun, J. S. Ng, S. Krishna, J. P. R. David
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 221107 (2024)
https://doi.org/10.1063/5.0228938
Published: November 2024
View article titled, Electroabsorption in InGaAs and GaAsSb p-i-n photodiodes
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Journal Articles

Switching figure-of-merit, optimal design, and power loss limit of (ultra-) wide bandgap power devices: A perspective

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Matthew Porter, Xin Yang, Hehe Gong, Bixuan Wang, Zineng Yang, Yuhao Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 110501 (2024)
https://doi.org/10.1063/5.0222105
Published: September 2024
View article titled, Switching figure-of-merit, optimal design, and power loss limit of (ultra-) wide bandgap power devices: A perspective
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Journal Articles

Direct observation of radio-frequency negative differential resistance in GaN-based single drift region IMPATT diodes

Open Access
Zhongtao Zhu, Lina Cao, Adam Jönsson, Pengcheng Xu, Jinqiao Xie, Patrick Fay
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 173509 (2024)
https://doi.org/10.1063/5.0202565
Published: April 2024
View article titled, Direct observation of radio-frequency negative differential resistance in GaN-based single drift region IMPATT diodes
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Journal Articles

A comparative study of impact ionization and avalanche multiplication in InAs, HgCdTe, and InAlAs/InAsSb superlattice

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S. Tempel, M. Winslow, S. H. Kodati, S. Lee, T. J. Ronningen, S. Krishna, S. Krishnamurthy, C. H. Grein
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 131105 (2024)
https://doi.org/10.1063/5.0189416
Published: March 2024
View article titled, A comparative study of impact ionization and avalanche multiplication in InAs, HgCdTe, and InAlAs/InAsSb superlattice
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Includes: Supplementary data
Journal Articles

Separate absorption, charge, and multiplication staircase avalanche photodiodes

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Adam A. Dadey, Andrew H. Jones, Stephen D. March, Seth R. Bank, Joe C. Campbell
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 081101 (2024)
https://doi.org/10.1063/5.0179470
Published: February 2024
View article titled, Separate absorption, charge, and multiplication staircase avalanche photodiodes
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Journal Articles

Time-dependent dielectric breakdown of SiC-CMOS technology for harsh environments

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Masahiro Masunaga, Yoshitaka Sasago, Yuki Mori, Digh Hisamoto
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 042103 (2024)
https://doi.org/10.1063/5.0184689
Published: January 2024
View article titled, Time-dependent dielectric breakdown of SiC-CMOS technology for harsh environments
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Journal Articles

High-speed InAlAs digital alloy avalanche photodiode

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Wenyang Wang, Jinshan Yao, Linze Li, Huachen Ge, Luyu Wang, Liqi Zhu, Qiushi Chen, Hong Lu, Baile Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 191102 (2023)
https://doi.org/10.1063/5.0169935
Published: November 2023
View article titled, High-speed InAlAs digital alloy avalanche photodiode
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Journal Articles

Ionization coefficients and excess noise characteristics of AlInAsSb on an InP substrate

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T. J. Ronningen, S. H. Kodati, X. Jin, S. Lee, H. Jung, X. Tao, H. I. J. Lewis, M. Schwartz, N. Gajowski, P. Martyniuk, B. Guo, A. H. Jones, J. C. Campbell, C. Grein, J. P. R. David, S. Krishna
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 131110 (2023)
https://doi.org/10.1063/5.0165800
Published: September 2023
View article titled, Ionization coefficients and excess noise characteristics of AlInAsSb on an InP substrate
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Includes: Supplementary data
Journal Articles

High electric field characteristics of GaAsSb photodiodes on InP substrates

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H. Jung, S. Lee, Y. Liu, X. Jin, J. P. R. David, S. Krishna
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 221102 (2023)
https://doi.org/10.1063/5.0154844
Published: June 2023
View article titled, High electric field characteristics of GaAsSb photodiodes on InP substrates
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Journal Articles

High-performance gallium nitride high-electron-mobility transistors with a thin channel and an AlN back barrier

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Yachao Zhang, Yaolong Dong, Kai Chen, Kui Dang, Yixin Yao, Baiqi Wang, Jinbang Ma, Wenjun Liu, Xing Wang, Jincheng Zhang, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 142105 (2023)
https://doi.org/10.1063/5.0134633
Published: April 2023
View article titled, High-performance gallium nitride high-electron-mobility transistors with a thin channel and an AlN back barrier
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Journal Articles

Ionization dynamics and damage conditions in fused silica irradiated with mid-infrared femtosecond pulses

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George D. Tsibidis, Emmanuel Stratakis
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 043501 (2023)
https://doi.org/10.1063/5.0130934
Published: January 2023
View article titled, Ionization dynamics and damage conditions in fused silica irradiated with mid-infrared femtosecond pulses
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Includes: Supplementary data
Journal Articles

Low voltage AC electroluminescence in silicon MOS capacitors

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I. K. M. Reaz Rahman, Shiekh Zia Uddin, Hyungjin Kim, Naoki Higashitarumizu, Ali Javey
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 193502 (2022)
https://doi.org/10.1063/5.0120507
Published: November 2022
View article titled, Low voltage AC electroluminescence in silicon MOS capacitors
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Includes: Supplementary data
Journal Articles

Avalanche-like breakdown behavior of copolymer organic semiconductor-based Schottky junction structure

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Jun Zhang, Man Li, Jing Chen, Maolin Zhang, Jiafei Yao, Guobin Zhang, Song Bai, Yufeng Guo
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 123502 (2022)
https://doi.org/10.1063/5.0104970
Published: September 2022
View article titled, Avalanche-like breakdown behavior of copolymer organic semiconductor-based Schottky junction structure
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Journal Articles

GaN-on-GaN p-i-n diodes with avalanche capability enabled by eliminating surface leakage with hydrogen plasma treatment

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Kai Fu, Ziyi He, Chen Yang, Jingan Zhou, Houqiang Fu, Yuji Zhao
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 092103 (2022)
https://doi.org/10.1063/5.0107677
Published: August 2022
View article titled, GaN-on-GaN p-i-n diodes with avalanche capability enabled by eliminating surface leakage with hydrogen plasma treatment
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Journal Articles

Microgap breakdown with floating metal rod perturbations

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Jiandong Chen, John P. Verboncoeur, Yangyang Fu
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 074102 (2022)
https://doi.org/10.1063/5.0104205
Published: August 2022
View article titled, Microgap breakdown with floating metal rod perturbations
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Journal Articles

The foundations of Shockley's equation for the average electron–hole-pair creation energy in semiconductors

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Sokrates T. Pantelides, D. Greg Walker, Mahmud Reaz, Massimo V. Fischetti, Ronald D. Schrimpf
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 042104 (2022)
https://doi.org/10.1063/5.0088142
Published: July 2022
View article titled, The foundations of Shockley's equation for the average electron–hole-pair creation energy in semiconductors
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Journal Articles

Photoassisted ionization spectroscopy of few implanted bismuth orbitals in a silicon-on-insulator device

Open Access
K. Stockbridge, N. Deßmann, V. Eless, T. Peach, B. N. Murdin, S. K. Clowes
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 073503 (2022)
https://doi.org/10.1063/5.0079560
Published: February 2022
View article titled, Photoassisted ionization spectroscopy of few implanted bismuth orbitals in a silicon-on-insulator device
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