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Journal Articles

First-principles computational analysis of the electronic and charge transport anisotropy of NbOX2 (X  =  Cl, Br, I) nanoribbons and nanosheets

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Quanzhen Wan, Haiping Zhou, Rui Wang, Haiyan Lu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 222102 (2025)
https://doi.org/10.1063/5.0274032
Published: June 2025
View articletitled, First-principles computational analysis of the electronic and charge transport anisotropy of NbOX2 (X  =  Cl, Br, I) nanoribbons and nanosheets
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Journal Articles

Observation of conflicting Seebeck coefficient and Hall coefficient in Sb-doped MnBi4Te7 crystals

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Yinong Yin, Yan Zhang, Yutian Lang, Dan Liu, Jiazheng Hao, Lunhua He, Guoqiang Liu, Xiaojian Tan, Jun Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 213904 (2025)
https://doi.org/10.1063/5.0252064
Published: May 2025
View articletitled, Observation of conflicting Seebeck coefficient and Hall coefficient in Sb-doped MnBi4Te7 crystals
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Journal Articles

Reasonable designing interfacial charge transfer channels in 2D metal–semiconductor contact: A time-domain ultrafast dynamic study

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Xianghong Niu, Wenchao Shan, Zifan Niu, Xinxin Wang, Xiuyun Zhang, Anqi Shi
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 171601 (2025)
https://doi.org/10.1063/5.0267874
Published: April 2025
View articletitled, Reasonable designing interfacial charge transfer channels in 2D metal–semiconductor contact: A time-domain ultrafast dynamic study
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Journal Articles

Nitrogen-vacancy centers with high intrinsic effective fields as probes for electric noise

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Changfeng Weng, Jiaxin Zhao, Mengyuan Cai, Yuanjie Yang, Shengran Lin, Wei Zhu, Liren Lou, Guanzhong Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 161904 (2025)
https://doi.org/10.1063/5.0234094
Published: April 2025
View articletitled, Nitrogen-vacancy centers with high intrinsic effective fields as probes for electric noise
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Journal Articles

Charge injection mechanism at Al/PE interface considering the multi-step-hopping at the amorphous/crystalline edge

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Zepeng Lv, Chenyu Wu, Yuqi Chen, Bing Xiao, Kai Wu, Yang Wang, Yonghong Cheng
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 161601 (2025)
https://doi.org/10.1063/5.0264480
Published: April 2025
View articletitled, Charge injection mechanism at Al/PE interface considering the multi-step-hopping at the amorphous/crystalline edge
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Journal Articles

Impact of photo-irradiation on the optical and spin properties of chiral CdS quantum dot films

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Pan Liang, Yang Wang, Lin Cheng, Rongrong Hu, Yumeng Men, Jinlei Li, Tianqing Jia, Zhenrong Sun, Donghai Feng
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 151902 (2025)
https://doi.org/10.1063/5.0268396
Published: April 2025
View articletitled, Impact of photo-irradiation on the optical and spin properties of chiral CdS quantum dot films
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Journal Articles

Sputtered tantalum oxynitride electron-selective contact for silicon solar cells

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Wenhao Li, Kun Gao, Shibo Wang, Wei Shi, Fengxian Cao, Wenhao Li, Haicheng Li, Xiang Chen, Jun Zhou, Peng Xie, Yao Li, Xinbo Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 133904 (2025)
https://doi.org/10.1063/5.0269841
Published: April 2025
View articletitled, Sputtered tantalum oxynitride electron-selective contact for silicon solar cells
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Journal Articles

Packing fraction related transport in disordered quantum dot arrays

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K. Eshraghi, S. Natani, P. Bandaru
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 113102 (2025)
https://doi.org/10.1063/5.0250705
Published: March 2025
View articletitled, Packing fraction related transport in disordered quantum dot arrays
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Journal Articles

Ultrafast interfacial charge transfer regulation in organo-metal perovskites through bandgap engineering

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Zongtao Huang, Nan Gong, Shijie Du, Wei Kong, Junpeng Deng, Bohong Zheng, Yilun Zhao, Lin Ma
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 101901 (2025)
https://doi.org/10.1063/5.0251531
Published: March 2025
View articletitled, Ultrafast interfacial charge transfer regulation in organo-metal perovskites through bandgap engineering
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Journal Articles

Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K

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Jie Zhou, Daniel Vincent, Sudip Acharya, Solomon Ojo, Yang Liu, Yifu Guo, Alireza Abrand, Jiarui Gong, Dong Liu, Samuel Haessly, Jianping Shen, Shining Xu, Yiran Li, Yi Lu, Hryhorii Stanchu, Luke Mawst, Parsian K. Mohseni, Kai Sun, Zetian Mi, Zhenqiang Ma, Shui-Qing Yu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 092107 (2025)
https://doi.org/10.1063/5.0241572
Published: March 2025
View articletitled, Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K
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Journal Articles

Temperature-dependent random telegraph signal in Co/CoO/Co point contact devices

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Zhongyang Ren, Muchan Li, Jiaojiao Tian, Chenhao Xia, Liming Ren, Fei Liu, Yunyi Fu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 083508 (2025)
https://doi.org/10.1063/5.0248880
Published: February 2025
View articletitled, Temperature-dependent random telegraph signal in Co/CoO/Co point contact devices
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Journal Articles

Physics-informed neural networks for phase-field simulation in designing high energy storage performance polymer nanocomposites

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Dong-Duan Liu, Qiao Li, Yu-Jie Zhu, Ruo-Jie Cheng, Tan Zeng, Hongxiao Yang, Jun Ma, Jin-Liang He, Qi Li, Chao Yuan
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 052901 (2025)
https://doi.org/10.1063/5.0244002
Published: February 2025
View articletitled, Physics-informed neural networks for phase-field simulation in designing high energy storage performance polymer nanocomposites
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Journal Articles

P-type surface charge transfer doping of diamond via low-dimensional transition metal oxides

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Xueting Wang, Defeng Liu, Xiaowei Wang, Xinjiang Wang, Lijun Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 022108 (2025)
https://doi.org/10.1063/5.0239374
Published: January 2025
View articletitled, P-type surface charge transfer doping of diamond via low-dimensional transition metal oxides
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Journal Articles

Manipulating the electronic and magnetic properties by ferroelectric polarization switching in 2D NiCl2/Ga2S3 van der Waals heterostructure

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Shu Wang, Tianxia Guo, Licheng Wang, Ziyu Wang, Xiufeng Zhang, Yanbiao Wang, Jinlian Lu, Xueke Yu, Yongjun Liu, Xiuyun Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 022905 (2025)
https://doi.org/10.1063/5.0245541
Published: January 2025
View articletitled, Manipulating the electronic and magnetic properties by ferroelectric polarization switching in 2D NiCl2/Ga2S3 van der Waals heterostructure
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Journal Articles

Tunneling effect in quantum-dot light-emitting diodes

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Rongmei Yu, Jinbing Cheng, Yingying Lu, Chunying Pu, Ting Wang, Wenyu Ji
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 013510 (2025)
https://doi.org/10.1063/5.0246824
Published: January 2025
View articletitled, Tunneling effect in quantum-dot light-emitting diodes
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Journal Articles

High mobility p-channel GaN heterostructures grown by MOCVD through impurity engineering

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Junkang Wu, Xuelin Yang, Yingming Song, Han Yang, Zhenghao Chen, Xingyu Fu, Zhijian Yang, Shixiong Zhang, Bo Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 252103 (2024)
https://doi.org/10.1063/5.0246960
Published: December 2024
View articletitled, High mobility p-channel GaN heterostructures grown by MOCVD through impurity engineering
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Journal Articles

Charge-storage behaviors in quantum-dot light-emitting diodes

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Yeguang Cui, Ting Wang, Bingyan Zhu, Xitong Yuan, Song Wang, Hanzhuang Zhang, Xiaochun Chi, Wenyu Ji
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 253503 (2024)
https://doi.org/10.1063/5.0249013
Published: December 2024
View articletitled, Charge-storage behaviors in quantum-dot light-emitting diodes
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Journal Articles

Charge transport mechanism in [GeOx](z)[SiO2](1-z) based MIS structures

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I. D. Yushkov, A. A. Gismatulin, I. P. Prosvirin, G. N. Kamaev, D. V. Marin, M. Vergnat, V. A. Volodin
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 242901 (2024)
https://doi.org/10.1063/5.0240239
Published: December 2024
View articletitled, Charge transport mechanism in [GeOx](z)[SiO2](1-z) based MIS structures
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Journal Articles

Insight into gain and transient response characteristics of AlGaN/GaN hetero-junction based UV photodetectors: Case study on the role of incident light intensity

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Wenxin Li, Yifu Wang, Guangyang Gu, Fangfang Ren, Dong Zhou, Weizong Xu, Feng Zhou, Dunjun Chen, Rong Zhang, Youdou Zheng, Hai Lu
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 231104 (2024)
https://doi.org/10.1063/5.0227700
Published: December 2024
View articletitled, Insight into gain and transient response characteristics of AlGaN/GaN hetero-junction based UV photodetectors: Case study on the role of incident light intensity
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Journal Articles

Solution-processed ambipolar ionic-gated transistors from 1D/2D heterojunctions of WSe2 and self-conversed SnO2/Se enabling high-sensitivity thermal sensing

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Jiehua Zhang, Feng Li, Wenwen Chen, Baobao Xu, Yiyi Yang, Zhixin Xie, Haihua Xu
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 223301 (2024)
https://doi.org/10.1063/5.0228989
Published: November 2024
View articletitled, Solution-processed ambipolar ionic-gated transistors from 1D/2D heterojunctions of WSe2 and self-conversed SnO2/Se enabling high-sensitivity thermal sensing
Open the PDF for Solution-processed ambipolar ionic-gated transistors from 1D/2D heterojunctions of WSe2 and self-conversed SnO2/Se enabling high-sensitivity thermal sensing in another window