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Journal Articles

GeS conducting-bridge resistive memory device with IGZO buffer layer for highly uniform and repeatable switching

Asif Ali, Haider Abbas, Jiayi Li, Diing Shenp Ang

Appl. Phys. Lett. 122, 203503 (2023)

https://doi.org/10.1063/5.0149760

Published: May 2023

View article titled, GeS conducting-bridge resistive memory device with IGZO buffer layer for highly uniform and repeatable switching

Includes: Supplementary data

Journal Articles

Solution-processed bismuth sulfide incorporated with zinc for high-gain and low-noise photodetection

Xiangming Fang, Zhenglin Jia, Yujie Yang, Ruiming Li, Huiming Huang, Qianqian Lin

Appl. Phys. Lett. 122, 192102 (2023)

https://doi.org/10.1063/5.0150175

Published: May 2023

View article titled, Solution-processed bismuth sulfide incorporated with zinc for high-gain and low-noise photodetection

Includes: Supplementary data

Journal Articles

Intrinsic anharmonicity tuned by in-plane rotational phonon mode in two-dimensional group-IB chalcogenides

Ran Zhou, Hanpu Liang, Yifeng Duan

Appl. Phys. Lett. 122, 082203 (2023)

https://doi.org/10.1063/5.0131920

Published: February 2023

View article titled, Intrinsic anharmonicity tuned by in-plane rotational phonon mode in two-dimensional group-IB chalcogenides

Includes: Supplementary data

Journal Articles

Internal reverse-biased p–n junctions: A possible origin of the high resistance in chalcogenide superlattice for interfacial phase change memory

Bowen Li, Longlong Xu, Yuzheng Guo, Huanglong Li

Appl. Phys. Lett. 120, 073504 (2022)

https://doi.org/10.1063/5.0081865

Published: February 2022

View article titled, Internal reverse-biased p–n junctions: A possible origin of the high resistance in chalcogenide superlattice for interfacial phase change memory

Includes: Supplementary data

Journal Articles

Ultralow thermal conductivity and thermoelectric properties of Bi₄GeTe₇ with an intrinsic van der Waals heterostructure

Niraj Kumar Singh, Ankit Kashyap, Ajay Soni

Appl. Phys. Lett. 119, 223903 (2021)

https://doi.org/10.1063/5.0076785

Published: December 2021

View article titled, Ultralow thermal conductivity and thermoelectric properties of Bi4GeTe7 with an intrinsic van der Waals heterostructure

Journal Articles

Enhancement of the photoelectrochemical properties of a CuGaSe₂-based photocathode for water reduction induced by loading of a Cu-deficient layer at the p–n heterointerface

Shigeru Ikeda, Riku Okamoto, Shogo Ishizuka

Appl. Phys. Lett. 119, 083902 (2021)

https://doi.org/10.1063/5.0060494

Published: August 2021

View article titled, Enhancement of the photoelectrochemical properties of a CuGaSe2-based photocathode for water reduction induced by loading of a Cu-deficient layer at the p–n heterointerface

Includes: Supplementary data

Journal Articles

Passivation mechanism in CdTe solar cells: The hybrid role of Se

Selva Chandrasekaran Selvaraj, Sameer Gupta, Damien Caliste, Pascal Pochet

Appl. Phys. Lett. 119, 062105 (2021)

https://doi.org/10.1063/5.0058290

Published: August 2021

View article titled, Passivation mechanism in CdTe solar cells: The hybrid role of Se

Journal Articles

Anisotropic epsilon-near-pole (ENP) resonance leads to hyperbolic photonic dispersion in homologous (Bi₂)_m(Bi₂Se₃)_n topological quantum materials

Krishna Chand Maurya, Animesh Bhui, Kanishka Biswas, Bivas Saha

Appl. Phys. Lett. 119, 011902 (2021)

https://doi.org/10.1063/5.0053587

Published: July 2021

View article titled, Anisotropic epsilon-near-pole (ENP) resonance leads to hyperbolic photonic dispersion in homologous (Bi2)m(Bi2Se3)n topological quantum materials

Includes: Supplementary data

Journal Articles

Understanding of forming and switching mechanism using trap distribution model for ovonic threshold switch device

Sangmin Lee, Jangseop Lee, Myonghoon Kwak, Oleksandr Mosendz, Hyunsang Hwang

Appl. Phys. Lett. 118, 212103 (2021)

https://doi.org/10.1063/5.0049568

Published: May 2021

View article titled, Understanding of forming and switching mechanism using trap distribution model for ovonic threshold switch device

Journal Articles

Dissipation-induced symmetry breaking: Emphanitic transitions in lead- and tin-containing chalcogenides and halide perovskites

Kingshuk Mukhuti, Sudip Sinha, Subhasis Sinha, Bhavtosh Bansal

Appl. Phys. Lett. 118, 162111 (2021)

https://doi.org/10.1063/5.0040056

Published: April 2021

View article titled, Dissipation-induced symmetry breaking: Emphanitic transitions in lead- and tin-containing chalcogenides and halide perovskites

Includes: Supplementary data

Journal Articles

Thermal properties of BaCu₂SnQ₄ (Q = S, Se) quaternary chalcogenides

Wilarachchige D. C. B. Gunatilleke, Andrew F. May, Hsin Wang, George S. Nolas

Appl. Phys. Lett. 117, 092101 (2020)

https://doi.org/10.1063/5.0013406

Published: August 2020

View article titled, Thermal properties of BaCu2SnQ4 (Q = S, Se) quaternary chalcogenides

Journal Articles

Enhanced thermoelectricity at the ultra-thin film limit

Thao Thi Thu Nguyen, Linh Tuan Dang, Giang Huong Bach, Tung Huu Dang, Kien Trung Nguyen, Hong Thi Pham, Thuat Nguyen-Tran, Tuyen Viet Nguyen, Toan The Nguyen, Hung Quoc Nguyen

Appl. Phys. Lett. 117, 083104 (2020)

https://doi.org/10.1063/5.0010274

Published: August 2020

View article titled, Enhanced thermoelectricity at the ultra-thin film limit

Journal Articles

Effect of cesium for Cu(In,Ga)Se₂ and Cu(In,Ga)(S,Se)₂ films studied by depth-resolved XAFS

Kosuke Beppu, Yoshiaki Hirai, Takuya Kato, Shogo Ishizuka, Toshiaki Ina, Takahiro Wada

Appl. Phys. Lett. 117, 043901 (2020)

https://doi.org/10.1063/5.0013375

Published: July 2020

View article titled, Effect of cesium for Cu(In,Ga)Se2 and Cu(In,Ga)(S,Se)2 films studied by depth-resolved XAFS

Includes: Supplementary data

Journal Articles

Hypergiant spin polarons photogenerated in ferromagnetic europium chalcogenides

X. Gratens, Yunbo Ou, J. S. Moodera, P. H. O. Rappl, A. B. Henriques

Appl. Phys. Lett. 116, 152402 (2020)

https://doi.org/10.1063/1.5143311

Published: April 2020

View article titled, Hypergiant spin polarons photogenerated in ferromagnetic europium chalcogenides

Journal Articles

Tungsten-doped Ge₂Sb₂Te₅ phase change material for high-speed optical switching devices

Pengfei Guo, Joshua A. Burrow, Gary A. Sevison, Heungdong Kwon, Christopher Perez, Joshua R. Hendrickson, Evan M. Smith, Mehdi Asheghi, Kenneth E. Goodson, Imad Agha, Andrew M. Sarangan

Appl. Phys. Lett. 116, 131901 (2020)

https://doi.org/10.1063/1.5142552

Published: April 2020

View article titled, Tungsten-doped Ge2Sb2Te5 phase change material for high-speed optical switching devices

Journal Articles

A unified mid-gap defect model for amorphous GeTe phase change material

Huanglong Li, John Robertson

Appl. Phys. Lett. 116, 052103 (2020)

https://doi.org/10.1063/1.5138998

Published: February 2020

View article titled, A unified mid-gap defect model for amorphous GeTe phase change material

Includes: Supplementary data

Journal Articles

Averaged angle-resolved electroreflectance spectroscopy on Cu(In,Ga)Se₂ solar cells: Determination of buffer bandgap energy and identification of secondary phase

Jasmin Seeger, Jonas Grutke, Nico Weber, Stefan Schützhoff, Xiaowei Jin, Reinhard Schneider, Dagmar Gerthsen, Wolfram Witte, Dimitrios Hariskos, Oliver Kiowski, Manuel Schweiger, Heinz Kalt, Michael Hetterich

Appl. Phys. Lett. 115, 263901 (2019)

https://doi.org/10.1063/1.5123380

Published: December 2019

View article titled, Averaged angle-resolved electroreflectance spectroscopy on Cu(In,Ga)Se2 solar cells: Determination of buffer bandgap energy and identification of secondary phase

Includes: Supplementary data

Journal Articles

Field-induced nucleation switching in binary ovonic threshold switches

Sangmin Lee, Jongmyung Yoo, Jaehyuk Park, Hyunsang Hwang

Appl. Phys. Lett. 115, 233503 (2019)

https://doi.org/10.1063/1.5126913

Published: December 2019

View article titled, Field-induced nucleation switching in binary ovonic threshold switches

Journal Articles

Al_xTe₁₋_x selector with high ovonic threshold switching performance for memory crossbar arrays

Tian Gao, Jie Feng, Haili Ma, Xi Zhu, Zhixian Ma

Appl. Phys. Lett. 114, 163505 (2019)

https://doi.org/10.1063/1.5089818

Published: April 2019

View article titled, AlxTe1−x selector with high ovonic threshold switching performance for memory crossbar arrays

Journal Articles

Pulsed thermal deposition of binary and ternary transition metal dichalcogenide monolayers and heterostructures

Niklas Mutz, Tino Meisel, Holm Kirmse, Soohyung Park, Nikolai Severin, Jürgen P. Rabe, Emil List-Kratochvil, Norbert Koch, Christoph T. Koch, Sylke Blumstengel, Sergey Sadofev

Appl. Phys. Lett. 114, 162101 (2019)

https://doi.org/10.1063/1.5088758

Published: April 2019

View article titled, Pulsed thermal deposition of binary and ternary transition metal dichalcogenide monolayers and heterostructures

Includes: Supplementary data

NARROW

Topics

GeS conducting-bridge resistive memory device with IGZO buffer layer for highly uniform and repeatable switching

Solution-processed bismuth sulfide incorporated with zinc for high-gain and low-noise photodetection

Intrinsic anharmonicity tuned by in-plane rotational phonon mode in two-dimensional group-IB chalcogenides

Internal reverse-biased p–n junctions: A possible origin of the high resistance in chalcogenide superlattice for interfacial phase change memory

Ultralow thermal conductivity and thermoelectric properties of Bi₄GeTe₇ with an intrinsic van der Waals heterostructure

Enhancement of the photoelectrochemical properties of a CuGaSe₂-based photocathode for water reduction induced by loading of a Cu-deficient layer at the p–n heterointerface

Passivation mechanism in CdTe solar cells: The hybrid role of Se

Anisotropic epsilon-near-pole (ENP) resonance leads to hyperbolic photonic dispersion in homologous (Bi₂)_m(Bi₂Se₃)_n topological quantum materials

Understanding of forming and switching mechanism using trap distribution model for ovonic threshold switch device

Dissipation-induced symmetry breaking: Emphanitic transitions in lead- and tin-containing chalcogenides and halide perovskites

Thermal properties of BaCu₂SnQ₄ (Q = S, Se) quaternary chalcogenides

Enhanced thermoelectricity at the ultra-thin film limit

Effect of cesium for Cu(In,Ga)Se₂ and Cu(In,Ga)(S,Se)₂ films studied by depth-resolved XAFS

Hypergiant spin polarons photogenerated in ferromagnetic europium chalcogenides

Tungsten-doped Ge₂Sb₂Te₅ phase change material for high-speed optical switching devices

A unified mid-gap defect model for amorphous GeTe phase change material

Averaged angle-resolved electroreflectance spectroscopy on Cu(In,Ga)Se₂ solar cells: Determination of buffer bandgap energy and identification of secondary phase

Field-induced nucleation switching in binary ovonic threshold switches

Al_xTe₁₋_x selector with high ovonic threshold switching performance for memory crossbar arrays

Pulsed thermal deposition of binary and ternary transition metal dichalcogenide monolayers and heterostructures

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