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Journal Articles

Interface atomic structures in a cadmium arsenide/III–V semiconductor heterostructure

Guomin Zhu, Binghao Guo, Susanne Stemmer

Appl. Phys. Lett. 123, 223101 (2023)

https://doi.org/10.1063/5.0173777

Published: November 2023

View article titled, Interface atomic structures in a cadmium arsenide/III–V semiconductor heterostructure

Includes: Supplementary data

Journal Articles

Ferroelectric passivation layer derived high performance AlGaN/GaN heterojunction field-effect transistor

Zhezhe Cong, Xiaoli Lu, Yunlong He, Mingshuang Cai, Xu Wang, Ye Wang, Xiaohua Ma, Yue Hao

Appl. Phys. Lett. 123, 212104 (2023)

https://doi.org/10.1063/5.0162453

Published: November 2023

View article titled, Ferroelectric passivation layer derived high performance AlGaN/GaN heterojunction field-effect transistor

Journal Articles

Investigations on shear band formation in metallic nanolayered composites

Shujing Dong, Caizhi Zhou, Tianju Chen

Appl. Phys. Lett. 123, 170501 (2023)

https://doi.org/10.1063/5.0162123

Published: October 2023

View article titled, Investigations on shear band formation in metallic nanolayered composites

Journal Articles

Extending Schottky–Mott rule to van der Waals heterostructures of 2D Janus materials: Influence of intrinsic dipoles

Wu-Yu Chen, Lei Li, Tao Huang, Zi-Xuan Yang, Tao Zhang, Gui-Fang Huang, Wangyu Hu, Wei-Qing Huang

Appl. Phys. Lett. 123, 171601 (2023)

https://doi.org/10.1063/5.0174594

Published: October 2023

View article titled, Extending Schottky–Mott rule to van der Waals heterostructures of 2D Janus materials: Influence of intrinsic dipoles

Includes: Supplementary data

Journal Articles

High-throughput interface prediction and generation scheme: The case of β -Ga₂O₃/AlN interfaces

Wei Yu, Qingzhong Gui, Xuhao Wan, John Robertson, Zhaofu Zhang, Yuzheng Guo

Appl. Phys. Lett. 123, 161601 (2023)

https://doi.org/10.1063/5.0162824

Published: October 2023

View article titled, High-throughput interface prediction and generation scheme: The case of β -Ga2O3/AlN interfaces

Includes: Supplementary data

Journal Articles

Signature of correlated electron–hole pair tunneling in multilayer WSe₂ at room temperature

Manh-Ha Doan, Shrawan Roy, Yingqiu Zhou, Peter Bøggild

Appl. Phys. Lett. 123, 143504 (2023)

https://doi.org/10.1063/5.0168887

Published: October 2023

View article titled, Signature of correlated electron–hole pair tunneling in multilayer WSe2 at room temperature

Includes: Supplementary data

Journal Articles

Effects of atmospheric UV-O₃ exposure of WSe₂ on the properties of the HfO₂/WSe₂ interface

Maria Gabriela Sales, Alexander Mazzoni, Wendy L. Sarney, Asher C. Leff, Justin Pearson, Sina Najmaei, Stephen McDonnell

Appl. Phys. Lett. 123, 123502 (2023)

https://doi.org/10.1063/5.0165599

Published: September 2023

View article titled, Effects of atmospheric UV-O3 exposure of WSe2 on the properties of the HfO2/WSe2 interface

Includes: Supplementary data

Journal Articles

Plasma-assisted deposition and characterization of Al₂O₃ dielectric layers on (001) β -Ga₂O₃

Sushovan Dhara, Ashok Dheenan, Nidhin Kurian Kalarickal, Hsien-Lien Huang, Ahmad Ehteshamul Islam, Chandan Joishi, Andreas Fiedler, Joe F. McGlone, Steven A. Ringel, Jinwoo Hwang, Siddharth Rajan

Appl. Phys. Lett. 123, 083504 (2023)

https://doi.org/10.1063/5.0146567

Published: August 2023

View article titled, Plasma-assisted deposition and characterization of Al2O3 dielectric layers on (001) β -Ga2O3

Includes: Supplementary data

Journal Articles

Effect of passivation on buried interface of CsPbI₂Br perovskite films

Xingming Yang, Junjie Jiang, Cuiping Xu, Peiqi Ji, Ziyi Xu, Ligang Ma, Hongling Cai, Fengming Zhang, Xiaoshan Wu

Appl. Phys. Lett. 123, 061601 (2023)

https://doi.org/10.1063/5.0152782

Published: August 2023

View article titled, Effect of passivation on buried interface of CsPbI2Br perovskite films

Includes: Supplementary data

Journal Articles

Ice adhesion mechanism on the patterned surface of aluminum matrix and array graphene based on molecular dynamics simulations

Lingfeng Zhao, Weilan Liu, Yizhou Shen, Yangjiangshan Xu, Biao Jiang, Jie Tao

Appl. Phys. Lett. 123, 061602 (2023)

https://doi.org/10.1063/5.0160197

Published: August 2023

View article titled, Ice adhesion mechanism on the patterned surface of aluminum matrix and array graphene based on molecular dynamics simulations

Includes: Supplementary data

Journal Articles

Low-voltage, solution-processed InZnO thin-film transistors with enhanced performance achieved by bilayer gate dielectrics

Mengchao Li, Qixin Zhuang, Shirong Lu, Zhigang Zang, Wensi Cai

Appl. Phys. Lett. 122, 162104 (2023)

https://doi.org/10.1063/5.0147857

Published: April 2023

View article titled, Low-voltage, solution-processed InZnO thin-film transistors with enhanced performance achieved by bilayer gate dielectrics

Includes: Supplementary data

Journal Articles

Enhanced dielectric energy storage properties in linear/nonlinear composites with hybrid-core satellite C/SiO₂@TiO₂ nanoparticles

Peng Yin, Peitao Xie, Qingyang Tang, Qifa He, Shuang Wei, Runhua Fan, Zhicheng Shi

Appl. Phys. Lett. 122, 132905 (2023)

https://doi.org/10.1063/5.0143758

Published: March 2023

View article titled, Enhanced dielectric energy storage properties in linear/nonlinear composites with hybrid-core satellite C/SiO2@TiO2 nanoparticles

Includes: Supplementary data

Journal Articles

Effect of multi-interface patterns on the light-outcoupling of perovskite light-emitting diodes

Zong-Tao Li, Jia-Yong Qiu, Jia-Sheng Li, Xue-Wei Du, Ze-Long Li, Hong-Wei Zhang

Appl. Phys. Lett. 122, 021106 (2023)

https://doi.org/10.1063/5.0133472

Published: January 2023

View article titled, Effect of multi-interface patterns on the light-outcoupling of perovskite light-emitting diodes

Journal Articles

Enhanced electro-actuation property of heterogeneous multi-layered polydimethylsiloxane-based dielectric elastomer composites

Zhiying Miao, Hang Zhao, Lei Yin, Na Zhang, Xiaoyu Ding, Xiuping Wei, Chuying Zhang, Jinbo Bai

Appl. Phys. Lett. 121, 192904 (2022)

https://doi.org/10.1063/5.0122871

Published: November 2022

View article titled, Enhanced electro-actuation property of heterogeneous multi-layered polydimethylsiloxane-based dielectric elastomer composites

Includes: Supplementary data

Journal Articles

Contact property depending on radiation intensity between the perovskite semiconductor layer and electrode film

Lijuan Chen, Xiaoyan Li, Guoli Li, Wei Hu

Appl. Phys. Lett. 121, 121601 (2022)

https://doi.org/10.1063/5.0114047

Published: September 2022

View article titled, Contact property depending on radiation intensity between the perovskite semiconductor layer and electrode film

Includes: Supplementary data

Journal Articles

On the thickness dependence of the polarization switching kinetics in HfO₂-based ferroelectric

Yoshiki Sawabe, Takuya Saraya, Toshiro Hiramoto, Chun-Jung Su, Vita Pi-Ho Hu, Masaharu Kobayashi

Appl. Phys. Lett. 121, 082903 (2022)

https://doi.org/10.1063/5.0098436

Published: August 2022

View article titled, On the thickness dependence of the polarization switching kinetics in HfO2-based ferroelectric

Journal Articles

Electrical properties and energy band alignment of SiO₂/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN( 000 1 ¯ ) substrates

Hidetoshi Mizobata, Kazuki Tomigahara, Mikito Nozaki, Takuma Kobayashi, Akitaka Yoshigoe, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Appl. Phys. Lett. 121, 062104 (2022)

https://doi.org/10.1063/5.0095468

Published: August 2022

View article titled, Electrical properties and energy band alignment of SiO2/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN( 000 1 ¯ ) substrates

Journal Articles

β -Ga₂O₃ FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching

Hsien-Chih Huang, Zhongjie Ren, A F M Anhar Uddin Bhuiyan, Zixuan Feng, Zhendong Yang, Xixi Luo, Alex Q. Huang, Andrew Green, Kelson Chabak, Hongping Zhao, Xiuling Li

Appl. Phys. Lett. 121, 052102 (2022)

https://doi.org/10.1063/5.0096490

Published: August 2022

View article titled, β -Ga2O3 FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching

Includes: Supplementary data

Journal Articles

Carrier injection behaviors from a band semiconductor to strongly correlated electron system in perovskite lanthanum vanadate/silicon junctions

Yasushi Hotta, Ryoichi Nemoto, Keisuke Muranushi, Yujun Zhang, Hiroki Wadati, Keita Muraoka, Hiroshi Sakanaga, Haruhiko Yoshida, Koji Arafune, Hitoshi Tabata

Appl. Phys. Lett. 120, 232106 (2022)

https://doi.org/10.1063/5.0094708

Published: June 2022

View article titled, Carrier injection behaviors from a band semiconductor to strongly correlated electron system in perovskite lanthanum vanadate/silicon junctions

Includes: Supplementary data

Journal Articles

A perspective on electrical generation of spin current for magnetic random access memories

Christopher Safranski, Jonathan Z. Sun, Andrew D. Kent

Appl. Phys. Lett. 120, 160502 (2022)

https://doi.org/10.1063/5.0084551

Published: April 2022

View article titled, A perspective on electrical generation of spin current for magnetic random access memories

NARROW

Topics

Interface atomic structures in a cadmium arsenide/III–V semiconductor heterostructure

Ferroelectric passivation layer derived high performance AlGaN/GaN heterojunction field-effect transistor

Investigations on shear band formation in metallic nanolayered composites

Extending Schottky–Mott rule to van der Waals heterostructures of 2D Janus materials: Influence of intrinsic dipoles

High-throughput interface prediction and generation scheme: The case of β -Ga₂O₃/AlN interfaces

Signature of correlated electron–hole pair tunneling in multilayer WSe₂ at room temperature

Effects of atmospheric UV-O₃ exposure of WSe₂ on the properties of the HfO₂/WSe₂ interface

Plasma-assisted deposition and characterization of Al₂O₃ dielectric layers on (001) β -Ga₂O₃

Effect of passivation on buried interface of CsPbI₂Br perovskite films

Ice adhesion mechanism on the patterned surface of aluminum matrix and array graphene based on molecular dynamics simulations

Low-voltage, solution-processed InZnO thin-film transistors with enhanced performance achieved by bilayer gate dielectrics

Enhanced dielectric energy storage properties in linear/nonlinear composites with hybrid-core satellite C/SiO₂@TiO₂ nanoparticles

Effect of multi-interface patterns on the light-outcoupling of perovskite light-emitting diodes

Enhanced electro-actuation property of heterogeneous multi-layered polydimethylsiloxane-based dielectric elastomer composites

Contact property depending on radiation intensity between the perovskite semiconductor layer and electrode film

On the thickness dependence of the polarization switching kinetics in HfO₂-based ferroelectric

Electrical properties and energy band alignment of SiO₂/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN( 000 1 ¯ ) substrates

β -Ga₂O₃ FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching

Carrier injection behaviors from a band semiconductor to strongly correlated electron system in perovskite lanthanum vanadate/silicon junctions

A perspective on electrical generation of spin current for magnetic random access memories

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